Patents by Inventor Andrew R. Atwell

Andrew R. Atwell has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for monolithically integrating silicon carbide microelectromechanical devices with electronic circuitry
    Patent number: 7615788
    Abstract: A device and method of forming electronics and microelectromechanical on a silicon carbide substrate having a slow etch rate is performed by forming circuitry on the substrate. A protective layer is formed over the circuitry having a slower etch rate than the etch rate of the silicon carbide substrate. Microelectromechanical structures supported by the substrate are then formed. The circuitry comprises a field effect transistor in one embodiment, and the protective layer comprises a heavy metal layer.
    Type: Grant
    Filed: January 29, 2007
    Date of Patent: November 10, 2009
    Assignee: Cornell Research Foundation, Inc.
    Inventors: Kevin Kornegay, Andrew R. Atwell, Mihaela Balseanu, Jon Duster, Eskinder Hailu, Ce Li
  • Method for monolithically integrating silicon carbide microelectromechanical devices with electronic circuitry
    Patent number: 7170141
    Abstract: A method of forming electronics and microelectromechanical on a silicon carbide substrate having a slow etch rate is performed by forming circuitry on the substrate. A protective layer is formed over the circuitry having a slower etch rate than the etch rate of the silicon carbide substrate. Microelectromechanical structures supported by the substrate are then formed. The circuitry comprises a field effect transistor in one embodiment, and the protective layer comprises a heavy metal layer.
    Type: Grant
    Filed: March 7, 2003
    Date of Patent: January 30, 2007
    Assignee: Cornell Research Foundation, Inc.
    Inventors: Kevin Kornegay, Andrew R. Atwell, Mihaela Balseanu, Jon Duster, Eskinder Hailu, Ce Li
  • Method for monolithically integrating silicon carbide microelectromechanical devices with electronic circuitry
    Publication number: 20040077164
    Abstract: A method of forming electronics and microelectromechanical on a silicon carbide substrate having a slow etch rate is performed by forming circuitry on the substrate. A protective layer is formed over the circuitry having a slower etch rate than the etch rate of the silicon carbide substrate. Microelectromechanical structures supported by the substrate are then formed. The circuitry comprises a field effect transistor in one embodiment, and the protective layer comprises a heavy metal layer.
    Type: Application
    Filed: March 7, 2003
    Publication date: April 22, 2004
    Inventors: Kevin Kornegay, Andrew R. Atwell, Mihaela Balseanu, Jon Duster, Eskinder Hailu, Ce Li