Abstract: Systems and methods for improving tag locationing are disclosed herein. An example system comprises: a plurality of tags configured to transmit data in response to requests; and a gateway that polls the plurality of tags at a first polling rate. The gateway may be configured to: receive a first request, in response to receiving the first request, transmit a signal to the plurality of tags that causes a first subset of the plurality of tags to transmit the data at a second polling rate that is different from the first polling rate, and receive the data from a second subset of the plurality of tags at the first polling rate.

Abstract: The disclosures herein relate to novel compounds of Formula (1a): and salts thereof, wherein W, Z, L, R1 and R2 are defined herein, and their use in treating, preventing, ameliorating, controlling or reducing the risk of disorders associated with CGRP receptors.

Abstract: The present disclosure provides an injectable medication security device. The device may comprise a recess on a first portion of the device. The recess may be configured to receive and couple to a neck portion of a vial containing the injectable medication. The device may comprise an opening on a second portion of the device, to permit access to a penetrable cover of the vial. The device may comprise at least one aperture configured to control access to the opening. The device may comprise a depressible switch. The depressible switch may be configured to cause the at least one aperture to open and provide access to the opening when the depressible switch is depressed, thereby permitting the medication to be drawn from the vial. The depressible switch may be configured to cause the at least one aperture to lock and close the opening when the depressible switch is released.

Abstract: The design of Dynamic Random Access Memory (DRAM) pass transistors is provided via generating a first plurality of transistor leakage currents by simulating different dopant configurations in a transistor; generating a second plurality of transistor leakage currents by simulating, for each dopant configuration of the different dopant configurations, a single trap insertion in the transistor; fitting the first and second pluralities of transistor leakage currents with first and second leakage current distributions; combining the first and second leakage current distributions to produce a third leakage current distribution; generating a third plurality of statistically generated leakage currents for a specified trap density for the transistor based on the first leakage current distribution, on the second leakage current distribution and on a specified trap density; and modeling and evaluating a DRAM cell including the transistor based on the third plurality of statistically generated leakage currents.

Abstract: The design of Dynamic Random Access Memory (DRAM) pass transistors is provided via generating a first plurality of transistor leakage currents by simulating different dopant configurations in a transistor; generating a second plurality of transistor leakage currents by simulating, for each dopant configuration of the different dopant configurations, a single trap insertion in the transistor; fitting the first and second pluralities of transistor leakage currents with first and second leakage current distributions; combining the first and second leakage current distributions to produce a third leakage current distribution; generating a third plurality of statistically generated leakage currents for a specified trap density for the transistor based on the first leakage current distribution, on the second leakage current distribution and on a specified trap density; and modeling and evaluating a DRAM cell including the transistor based on the third plurality of statistically generated leakage currents.

Abstract: Disclosed herein are MEMS resonator device designs and fabrication techniques that provide protection against electrostatic charge imbalances. In one aspect, a MEMS resonator device includes a substrate, an electrode including a first microstructure supported by the substrate, a resonant element including a second microstructure spaced from the first microstructure by a gap for resonant displacement of the second microstructure within the gap during operation, and a disabled shunt coupled to the electrode or the resonant element. The disabled shunt is disabled to enable the resonant displacement but otherwise configured to protect against damage from an electrostatic charge imbalance before the operation of the MEMS resonator device.

Abstract: Disclosed herein are MEMS resonator device designs and fabrication techniques that provide protection against electrostatic charge imbalances. In one aspect, a MEMS resonator device includes a substrate, an electrode including a first microstructure supported by the substrate, a resonant element including a second microstructure spaced from the first microstructure by a gap for resonant displacement of the second microstructure within the gap during operation, and a disabled shunt coupled to the electrode or the resonant element. The disabled shunt is disabled to enable the resonant displacement but otherwise configured to protect against damage from an electrostatic charge imbalance before the operation of the MEMS resonator device.

Abstract: Disclosed herein are MEMS resonator device designs and fabrication techniques that provide protection against electrostatic charge imbalances. In one aspect, a MEMS resonator device includes a substrate, an electrode including a first microstructure supported by the substrate, a resonant element including a second microstructure spaced from the first microstructure by a gap for resonant displacement of the second microstructure within the gap during operation, and a disabled shunt coupled to the electrode or the resonant element. The disabled shunt is disabled to enable the resonant displacement but otherwise configured to protect against damage from an electrostatic charge imbalance before the operation of the MEMS resonator device.

Abstract: A device has a resonator coupled to input and output nodes, the resonator being characterized by a transducer to drive the output node, and further characterized by a feedthrough capacitance such that portions of the input signal bypass the transducer to allow a spurious signal to reach the output node. The device includes a compensation capacitor coupled to the output node to define a compensation capacitance in accordance with the feedthrough capacitance. A phase inversion circuit is coupled to the compensation capacitance to generate a compensation signal and coupled to the output node such that the spurious signal is offset by the compensation signal. In some cases, a differential amplifier of the phase inversion circuit has the compensation capacitance in a feedback path to offset the feedthrough capacitance. In these and other cases, the compensation capacitance and the feedthrough capacitance may be unmatched to avoid overcompensation.

Abstract: Disclosed herein are devices and methods for generating a modulated signal with a MEMS resonator, or microresonator. A bias, or polarization, voltage for activating the MEMS resonator is determined by a control signal, or input voltage, indicative of information to be carried by the modulated signal. In some cases, the MEMS resonator may be driven by an oscillator circuit to facilitate operation of the MEMS resonator. The control signal may include an amplitude modulated voltage or a digital data stream such that output signals of the MEMS resonator or oscillator circuit may carry information via frequency modulation, such as frequency shift keying modulation.

Abstract: A device has a resonator coupled to input and output nodes, the resonator being characterized by a transducer to drive the output node, and further characterized by a feedthrough capacitance such that portions of the input signal bypass the transducer to allow a spurious signal to reach the output node. The device includes a compensation capacitor coupled to the output node to define a compensation capacitance in accordance with the feedthrough capacitance. A phase inversion circuit is coupled to the compensation capacitance to generate a compensation signal and coupled to the output node such that the spurious signal is offset by the compensation signal. In some cases, a differential amplifier of the phase inversion circuit has the compensation capacitance in a feedback path to offset the feedthrough capacitance. In these and other cases, the compensation capacitance and the feedthrough capacitance may be unmatched to avoid overcompensation.

Abstract: The invention provides a vehicle wheel arch (18) of the type including an antenna (20) for interacting with a device (22) carried by an assembly (12) of a wheel (14) and a tire (16). The wheel arch includes a shield (24) overlying the antenna (20) beside the radially-inner face of the wheel arch (18), said shield (24) being suitable for retaining matter (26) at a certain distance from the antenna (20).