Abstract: A template for imprint lithography can include an active area that includes a plurality of tiers including a first tier and a second tier, and a first feature within the first tier or the second tier. In another embodiment, the first and second tiers include features, and the average feature depth or height within the first tier may be substantially the same as or different from the average feature depth or height within the second tier. The template can be used in imprinting a formable layer to form a patterned resist layer over a device substrate that has at least two tiers. The template and its use are well suited for device substrates having exposed surfaces at significantly different elevations, particularly where planarization would be complicated or nearly impossible to implement.

Abstract: A template for imprint lithography can include an active area that includes a plurality of tiers including a first tier and a second tier, and a first feature within the first tier or the second tier. In another embodiment, the first and second tiers include features, and the average feature depth or height within the first tier may be substantially the same as or different from the average feature depth or height within the second tier. The template can be used in imprinting a formable layer to form a patterned resist layer over a device substrate that has at least two tiers. The template and its use are well suited for device substrates having exposed surfaces at significantly different elevations, particularly where planarization would be complicated or nearly impossible to implement.

Abstract: Several mid UV photo acid generators (PAGs), a chemically amplified photo resist (CAMP), and method for improving nested to isolated line bias are provided. Similarly, photo speed may also be improved. Unlike conventional mid UV PAGs, the present invention's PAG compounds, resist composition, and method do not require a mid UV sensitizer. Specifically, PAGs are provided that bear a chromophore capable of receiving mid UV radiation, particularly I-line, and that are suitable for use in a chemically amplified photo resist having a photo speed of 500 mJ/cm.sup.2 or less, but preferrably 200 mJ/cm.sup.2 or less. For example, the PAGs can be a sulfonium or iodonium salt, such as anthryl, butyl, methyl sulfonium triflate and bis(4-t-butylphenyl)iodonium 9,10-dimethoxyanthracene sulfonate.