Abstract: A kiosk includes a work surface and a storage container coupled to the work surface. A hardware-control device is coupled to the kiosk to allow for remote troubleshooting of hardware at the kiosk. The storage container includes a plurality of storage lockers that can store and dispense hardware if troubleshooting the device at the kiosk is unsuccessful.

Abstract: Non-destructive, below-surface defect rendering of an IC chip using image intensity analysis is disclosed. One method includes providing an IC chip delayered to a selected layer; determining a defect location below a surface of the selected layer using a first image of the IC chip obtained using an CPIT in a first mode; generating a second image of the IC chip with the CPIT in a second mode, the second image representing charged particle signal from the defect below the surface of the selected layer; and rendering the defect by comparing an image intensity of a reference portion of the second image not including the defect with the image intensity of a defective portion of the second image including the defect, wherein the reference portion and the defective portion are of structures expected to be substantially identical.

Abstract: Disclosed are an automated data analysis system and method. They system provides a standardized data analysis request form that allows a user to select an experiment (e.g., a wafer-level based yield split lot (EWR) analysis, a lot-level based process change notification (PCN) analysis, and lot-level based tool/mask qualification analysis) and a data analysis for a specific process module of interest. For each specific data analysis request, the system identifies critical test parameters, which are grouped depending on in-line test levels and photolithography levels. The system links the analysis request to test data sources and automatically monitors the test data sources, searching for the critical test parameters. When the critical test parameters become available, the system automatically performs the requested analysis, generates a report of the analysis and publishes the report with optional drill downs to more detailed results.

Abstract: Non-destructive, below-surface defect rendering of an IC chip using image intensity analysis is disclosed. One method includes providing an IC chip delayered to a selected layer; determining a defect location below a surface of the selected layer using a first image of the IC chip obtained using an CPIT in a first mode; generating a second image of the IC chip with the CPIT in a second mode, the second image representing charged particle signal from the defect below the surface of the selected layer; and rendering the defect by comparing an image intensity of a reference portion of the second image not including the defect with the image intensity of a defective portion of the second image including the defect, wherein the reference portion and the defective portion are of structures expected to be substantially identical.