Abstract: Embodiments herein generally relate to polishing pads and method of forming polishing pads. In one embodiment, a polishing pad having a polishing surface that is configured to polish a surface of a substrate is provided. The polishing pad includes a polishing layer. At least a portion of the polishing layer comprises a continuous phase of polishing material featuring a plurality of first regions having a first pore-feature density and a plurality of second regions having a second pore-feature density that is different from the first pore-feature density. The plurality of first regions are distributed in a pattern in an X-Y plane of the polishing pad in a side-by-side arrangement with the plurality of second regions and individual portions or ones of the plurality of first regions are interposed between individual portions or ones of the plurality of second regions.

Abstract: Embodiments herein generally relate to polishing pads and method of forming polishing pads. In one embodiment, a polishing pad having a polishing surface that is configured to polish a surface of a substrate is provided. The polishing pad includes a polishing layer. At least a portion of the polishing layer comprises a continuous phase of polishing material featuring a plurality of first regions having a first pore-feature density and a plurality of second regions having a second pore-feature density that is different from the first pore-feature density. The plurality of first regions are distributed in a pattern in an X-Y plane of the polishing pad in a side-by-side arrangement with the plurality of second regions and individual portions or ones of the plurality of first regions are interposed between individual portions or ones of the plurality of second regions.

Abstract: Embodiments herein generally relate to polishing pads and method of forming polishing pads. In one embodiment, a polishing pad having a polishing surface that is configured to polish a surface of a substrate is provided. The polishing pad includes a polishing layer. At least a portion of the polishing layer comprises a continuous phase of polishing material featuring a plurality of first regions having a first pore-feature density and a plurality of second regions having a second pore-feature density that is different from the first pore-feature density. The plurality of first regions are distributed in a pattern in an X-Y plane of the polishing pad in a side-by-side arrangement with the plurality of second regions and individual portions or ones of the plurality of first regions are interposed between individual portions or ones of the plurality of second regions.

Abstract: The present invention relates to porous substrate compositions and methods for producing such compositions. In one embodiment, the porous substrate composition of the present invention comprises sintered spherical particles of a substantially uniform size. The porous media compositions of the present invention comprise relatively randomly-ordered particles with a void fraction significantly higher than compositions with a more ordered, close-packed configuration. The present invention further relates to composite porous media compositions comprising two or more relatively discrete layers of sintered particles.

Abstract: The present invention relates to porous substrate compositions and methods for producing such compositions. In one embodiment, the porous substrate composition of the present invention comprises sintered spherical particles of a substantially uniform size. The porous media compositions of the present invention comprise relatively randomly-ordered particles with a void fraction significantly higher than compositions with a more ordered, close-packed configuration. The present invention further relates to composite porous media compositions comprising two or more relatively discrete layers of sintered particles.

Abstract: Musical instrument pickups and methods of constructing same to achieve a user-desired signal output level and a user-desired tonal characteristic from a stringed instrument are disclosed. The method may include steps for selecting a coil geometry, selecting a number of coils, selecting a coil wire gauge and number of turns for each coil and selecting a pole piece. In selecting the pole piece consideration may be given to pole piece composition, pole piece thickness, height and width, and pole piece response in terms of relative inductive and relative resonant frequency characteristics and/or the shape of the frequency response in the vicinity of resonance.

Abstract: Musical instrument pickups comprising a plurality of coil-wire wrappings, each coil-wire wrapping having a particular geometric cross-section. Related embodiments exhibiting noise cancellation features are also disclosed.

Abstract: A musical instrument pickup comprising a plurality of coil-wire wrappings, each coil having a particular geometric cross-section. Each coil-wire wrapping is positioned around a pole piece. Related embodiments exhibiting noise cancellation features are also disclosed.

Abstract: The polishing pad is suitable for planarizing at least one of semiconductor, optical and magnetic substrates. The polishing pad has an ultimate tensile strength of at least 3,000 psi (20.7 MPa) and polymeric matrix containing closed cell pores. The closed cell pores have an average diameter of 1 to 50 ?m and represent 1 to 40 volume percent of the polishing pad. The pad texture has an exponential decay constant, ?, of 1 to 10 ?m as a result of the natural porosity of the polymeric matrix and a surface texture developed by implementing periodic or continuous conditioning with an abrasive. The surface texture has a characteristic half height half width, W1/2 that is less than or equal to the value of ?.

Abstract: The polishing pad is suitable for planarizing at least one of semiconductor, optical and magnetic substrates. The polishing pad has an ultimate tensile strength of at least 3,000 psi (20.7 MPa) and polymeric matrix containing closed cell pores. The closed cell pores have an average diameter of 1 to 50 ?m and represent 1 to 40 volume percent of the polishing pad. The pad texture has an exponential decay constant, ?, of 1 to 10 ?m as a result of the natural porosity of the polymeric matrix and a surface texture developed by implementing periodic or continuous conditioning with an abrasive. The surface texture has a characteristic half height half width, W1/2 that is less than or equal to the value of ?.

Abstract: The present invention provides a method for polishing silica and silicon nitride on a semiconductor wafer comprising the steps of planarizing the silica with a first aqueous composition comprising by weight percent 0.01 to 5 carboxylic acid polymer, 0.02 to 6 abrasive, 0.01 to 10 polyvinylpyrrolidone, 0 to 5 cationic compound, 0 to 1 phthalic acid and salts, 0 to 5 zwitterionic compound and balance water, wherein the polyvinylpyrrolidone has an average molecular weight between 100 grams/mole to 1,000,000 grams/mole. The method further provides detecting an endpoint to the planarization, and clearing the silica with a second aqueous composition comprising by weight percent 0.001 to 1 quaternary ammonium compound, 0.001 to 1 phthalic acid and salts thereof, 0.01 to 5 carboxylic acid polymer, 0.01 to 5 abrasive and balance water.

Abstract: Polishing pads having a surface morphology that results in a high degree of planarization efficiency when planarizing a wafer surface are disclosed. One conditioned polishing pad is non-porous and has a surface height distribution with a surface roughness Ra<3 microns. Another conditioned polishing pad is porous and has a surface height probability distribution with a pad surface height Ratio R?60%, or alternatively has an asymmetric surface height probability distribution characterized by an asymmetry factor A10?0.50. Methods of pad conditioning and planarizing a wafer using the polishing pads are also disclosed.

Abstract: Polishing pads having a surface morphology that results in a high degree of planarization efficiency when planarizing a wafer surface are disclosed. One conditioned polishing pad is non-porous and has a surface height distribution with a surface roughness Ra<3 microns. Another conditioned polishing pad is porous and has a surface height probability distribution with a pad surface height Ratio R≧60%, or alternatively has an asymmetric surface height probability distribution characterized by an asymmetry factor A10≦0.50. Methods of pad conditioning and planarizing a wafer using the polishing pads are also disclosed.

Abstract: A polishing pad for a chemical mechanical planarization or polishing (CMP) system has a polish rate responsive to the pad contact area and the pad contact dynamics. The pad contact area is characterized by a predetermined statistical distribution. The pad contact dynamics are characterized by a mechanical behavior.

Abstract: A pad conditioner for conditioning polishing pads that has precisely controlled abrasive particle positioning is formed using a temporary holding layer that establishes a uniform contact plane. The pad conditioners may be formed with multiple levels of contact planes that provide conditioning action at multiple heights occurring simultaneously. The pad conditioners may also be formed with a specified particle orientation, or with multiple sizes of particles.

Abstract: A chlorine based dry-cleaning system appropriate for removing metal contaminants from the surface of substrate is described in which the metal contaminant is chlorinated and reduced to a volatile metal chloride by UV irradiation. The process parameters of chlorine gas partial pressure, temperature, ultraviolet bandwidth, and/or the sequence of exposure of the substrate to the chlorine containing gas and to the ultraviolet radiation are selected so as to effect substantial removal of the metal without excessive substrate roughening.

Abstract: A process for removing metallic material, for instance copper, iron, nickle and their oxides, from a surface of a substrate such as a silicon, silicon oxide or gallium arsenide substrate. The process includes the steps of: a) placing the substrate in a reaction chamber; b) providing in the reaction chamber a gas mixture, the mixture comprising a first component which is fluorine or a fluorine-containing compound, which will spontaneously dissociate upon adsorption on the substrate surface and a second component which is a halosilane compound, the halosilane, and the fluorine if present, being activated by: i) irradiation with UV; ii) heating to a temperature of about 800.degree. C. or higher; or iii) plasma generation, to thereby convert said metallic material to a volatile metal-halogen-silicon compound, and c) removing the metal-halogen-silicon compound from the substrate by volatilization. The process may be used to remove both dispersed metal and bulk metal films or islands.