Abstract: The present invention provides a foraminous burner liner for a gas abatement system. The burner liner comprises a hollow body defined by a wall, the wall comprising a plurality of interconnected substantially concentric layers. Each layer of the wall comprises a substantially regular openwork mesh; wherein the substantially regular openwork mesh of each layer is configured such that it is out of phase with one or more adjacent layers, and wherein the wall comprises sufficient layers arranged such that the wall is optically opaque when viewed externally in any radially inward direction normal to the wall.

Abstract: A purge gas feeding means, an abatement system comprising such a means and a method of modifying an abatement system to include such a purge gas feeding means is disclosed. The purge gas feeding means comprises a plurality of paths running from an outer perimeter of the purge gas feeding means to an inner surface, the inner surface comprising a purge gas outlet for outputting the purge gas into the abatement system; wherein a cross sectional area of the plurality of paths increases from the outer perimeter to the inner surface such that a pressure of the purge gas falls flowing along the paths drops.

Abstract: A vacuum pumping arrangement comprising multiple pumping stages for evacuating a process chamber and a method of cleaning the vacuum pumping arrangement is discussed. The vacuum pumping arrangement comprises: at least one turbomolecular pumping stage; at least one further pumping stage downstream of the turbomolecular pumping stage; and at least one inlet for admitting radicals into the vacuum pumping arrangement, the at least one inlet being located downstream of the turbomolecular stage and upstream of at least one of the at least one further pumping stage.

Abstract: A purge gas feeding means, an abatement system comprising such a means and a method of modifying an abatement system to include such a purge gas feeding means is disclosed. The purge gas feeding means comprises a plurality of paths running from an outer perimeter of the purge gas feeding means to an inner surface, the inner surface comprising a purge gas outlet for outputting the purge gas into the abatement system; wherein a cross sectional area of the plurality of paths increases from the outer perimeter to the inner surface such that a pressure of the purge gas falls flowing along the paths drops.

Abstract: A nozzle for an abatement apparatus and a method are disclosed. The nozzle is for abatement apparatus operable to treat an effluent stream from a processing tool, the nozzle comprises: a nozzle body defining a nozzle inlet operable to receive the effluent stream, a nozzle outlet, and a conduit extending between the nozzle inlet and the nozzle outlet and operable to convey the effluent stream in a direction of flow from the nozzle inlet to the nozzle outlet; and an effluent stream rotator configured to impart a rotational component to the effluent stream to rotate the effluent stream around the direction of flow. In this way, the effluent stream is rotated as it passes through the nozzle body. The destruction rate efficiency achieved by an abatement apparatus when receiving such rotating effluent streams has been found to be significantly improved compared to non-rotating effluent streams.

Abstract: A vacuum exhaust system which exhausts gas from chambers and which comprises a plurality of branch channels for the exhaustion of the gas from the chambers, a main pipeline in the form of a confluence of the plurality of branch channels, channel open-close valves fitted to correspond with each of the said plurality of branch channels, a channel-switching valve connecting the main channel and a plurality of selection channels and allowing flow between the main channel and any one of the plurality of selection channels, a first pump which functions as a gas exhaust means in the molecular flow region of the gas and is fitted to one of the plurality of branch channels, and second pumps which function as gas exhaust means in the viscous flow region of the gas and are fitted to the plurality of selection channels.

Abstract: A vacuum exhaust system which exhausts gas from chambers and which comprises a plurality of branch channels for the exhaustion of the gas from the chambers, a main pipeline in the form of a confluence of the plurality of branch channels, channel open-close valves fitted to correspond with each of the said plurality of branch channels, a channel-switching valve connecting the main channel and a plurality of selection channels and allowing flow between the main channel and any one of the plurality of selection channels, a first pump which functions as a gas exhaust means in the molecular flow region of the gas and is fitted to one of the plurality of branch channels, and second pumps which function as gas exhaust means in the viscous flow region of the gas and are fitted to the plurality of selection channels.

Abstract: A vacuum pumping arrangement includes a first primary pump having an inlet and an outlet, and a first common pumping line fluidly connected to the inlet, the first common pumping line including a plurality of first common pumping line inlets each of which is fluidly connectable to at least one vacuum process chamber forming the semiconductor fabrication tool, the first primary pump and the first common pumping line handling deposition process flows. The pumping arrangement further including a second primary pump having an inlet and an outlet, and a second common pumping line fluidly connected to the inlet of the second primary pump, the second common pumping line including a plurality of second pumping line inlets each of which is fluidly connectable to at least one process chamber forming the semiconductor fabrication tool, the second primary pump and the second common pumping line handling cleaning process flows.

Abstract: A method is described of treating a gas stream exhausted from an atomic layer deposition (ALD) process chamber to which two or more gaseous precursors are alternately supplied. Between the process chamber and a vacuum pump used to draw the gas stream from the chamber, the gas stream is conveyed to a gas mixing chamber, to which a reactant is supplied for reacting with one of the gaseous precursors to form solid material. The gas stream is then conveyed to a cyclone separator to separate solid material from the gas stream. By deliberately reacting a non-reacted precursor to form solid material upstream from the pump, reaction within the pump of the non-reacted precursor and a second non-reacted precursor subsequently drawn from the chamber by the pump can be inhibited.

Abstract: A method for treating a perfluorocompound-containing gas stream, for example an effluent fluid stream from a semi-conductor manufacturing process tool. In one embodiment, a plasma torch is used to generate a plasma from an ionisable gas, such as nitrogen or argon. This plasma is injected into a reaction chamber, which receives both a stream of water vapour and an effluent fluid stream. The ionised stream dissociates the water vapour into heated H+ and OH? ions for reaction with the perfluorocompound. An apparatus for treating a perfluorocompound containing gas stream comprises a means for generating a plasma from a source gas, a means for injecting the plasma into the reaction chamber, a means for conveying the gas stream to the reaction chamber, and a means for conveying a source of H+ and OH? ions to the plasma.

Abstract: A multi-stage vacuum pump comprises, between adjacent stages of the pump, a continuous ignition source for igniting a fuel within a pumped fluid. This can ensure that the concentration of the fuel in fluid exhaust from the pump is below its lower explosive limit.

Abstract: Apparatus is described for treating an effluent fluid stream from a semiconductor manufacturing process tool. The apparatus comprises a combustion chamber, means for heating the combustion chamber, and a nozzle for injecting the effluent stream into the combustion chamber. The apparatus is configured to enable a fuel and an oxidant to be selectively injected into the effluent stream as required to optimise the combustion conditions for a particular effluent stream. In one to embodiment, a lance projecting into the nozzle selectively injects an oxidant into the effluent stream, and a sleeve surrounding the nozzle selectively injects a fuel into the effluent stream.

Abstract: The present invention provides a system, apparatus and method for improving the efficiency of a semiconductor processing system, such as a deposition system by decreasing or substantially eliminating the accumulation of by-products in the apparatus components of the semiconductor processing system. The present invention further relates to improving the efficiency of a foreline trap associated with a semiconductor processing system, wherein the trap removes substantially all of the by-products from the exhaust gas from the processing chamber. In addition, the present invention provides a system, apparatus and method for efficiently clearing traps of accumulated by-products from exhaust gas of a semiconductor processing system.

Abstract: Apparatus is described for treating an effluent gas stream from a semiconductor manufacturing process tool. The apparatus comprises a plasma torch for generating a glow discharge from an inert, ionisable gas. The gas stream is conveyed to the glow discharge to ignite a plasma. A source of electromagnetic radiation supplies electromagnetic radiation to the effluent gas stream to sustain the plasma. The apparatus is particularly suitable for treating perfluorinated and hydroflurocarbon compounds in the effluent gas stream.

Abstract: In a process and apparatus for utilisation of an ammonia-containing waste gas stream from a semiconductor processing step, ammonia contained in the waste gas stream is decomposed, for example, in a reactor (3), into hydrogen and nitrogen, the gas stream so obtained is passed through a hydrogen separator (5) in order to separate hydrogen gas therefrom, the separated hydrogen gas is purified in a purifier (8), and the purified hydrogen gas is recycled for use in semiconductor processing. The process and apparatus allow efficient usage of semiconductor processing waste gases by permitting recycling of a component thereof.

Abstract: A method for scrubbing a halogen-containing gas, comprises contacting the halogen-containing gas with water at a temperature of at least 30° C., the gas optionally subsequently being subjected to a further treatment step comprising contacting it with water at a temperature of less than 30° C. and/or a gas dilution step. An apparatus for carrying out the method comprises a hot wash chamber (6) and optionally a cold wash chamber (7) and/or a gas dilution device (13).

Abstract: An exhaust gas from a chemical vapour deposition process may contain ammonia and metalorganic vapour, such as TMG. In a treatment process to remove these substances from the exhaust gas, the exhaust gas is exposed to an ammonia decomposition catalyst to convert the ammonia into nitrogen and hydrogen. In order to avoid deposition of carbon on the surface of the catalyst, the exhaust gas is first exposed to a heated bed of dry, granular materials to cause the metalorganic vapour to decompose before the exhaust gas is exposed to the aluminium decomposition catalyst.