Abstract: Amorphous silicon (a-Si) is hydrogenated for use as a dielectric (e.g., an interlayer dielectric) for superconducting electronics. A hydrogenated a-Si layer is formed on a substrate by CVD or sputtering. The hydrogen may be integrated during or after the a-Si deposition. After the layer is formed, it is first annealed in an environment of high hydrogen chemical potential and subsequently annealed in an environment of low hydrogen chemical potential. Optionally, the a-Si (or an H-permeable overlayer, if added) may be capped with a hydrogen barrier before removing the substrate from the environment of low hydrogen chemical potential.

Abstract: Provided are superconducting circuits, methods of operating these superconducting circuits, and methods of determining processing conditions for operating these superconducting circuits. A superconducting circuit includes a superconducting element, a conducting element, and a dielectric element disposed between the superconducting element and the conducting element. The conducting element may be another superconducting element, a resonating element, or a conducting casing. During operation of the superconducting element a direct current (DC) voltage is applied between the superconducting element and the conducting element. This application of the DC voltage reduces average microwave absorption of the dielectric element. In some embodiments, when the DC voltage is first applied, the microwave absorption may initially rise and then fall below the no-voltage absorption level.

Abstract: Provided are superconducting tunnel junctions, such as Josephson tunnel junctions, and a method of fabricating thereof. A junction includes an insulator disposed between two superconductors. The junction may also include one or two interface layers, with each interface layer disposed between the insulator and one of the superconductors. The interface layer is configured to prevent oxygen from entering the adjacent superconductor during fabrication and operation of the junction. Furthermore, the interface layer may protect the insulator from the environment during handling and processing of the junction, thereby allowing vacuum breaks after the interface layer is formed as well as new integration schemes, such as depositing a dielectric layer and forming a trench in the dielectric layer for the second superconductor. In some embodiments, the junction may be annealed during its fabrication to move oxygen from the superconductors and/or from the insulator into the one or two interface layers.

Abstract: Provided are methods of forming low resistivity contacts. Also provided are devices having such low resistive contacts. A method may include doping the surface of a structure, such as a gallium nitride layer. Specifically, a dopant containing layer is formed on the surface of the structure using, for example, atomic layer deposition (ALD). The dopant may magnesium. In some embodiments, the dopant containing layer also includes nitrogen. A capping layer may be then formed over the dopant containing layer to prevent dopant desorption. The stack including the structure with the dopant containing layer disposed on its surface is then annealed to transfer dopant from the dopant containing layer into the surface. After annealing, any remaining dopant containing layer is removed. When another component is later formed over the surface, a low resistivity contact is created between this other component and the doped structure.

Abstract: An amorphous silicon (a-Si) dielectric for superconducting electronics is fabricated with reduced loss tangent by fluorine passivation throughout the bulk of the layer. Complete layers or thinner sub-layers of a-Si are formed by physical vapor deposition at low temperatures (<350 C, e.g. ˜200 C) to prevent reaction with superconducting materials, then exposed to fluorine. The fluorine may be a component of a gas or plasma, or it may be a component of an interface layer. The fluorine is driven into the a-Si by heat (e.g., <350 C) or impact to passivate defects such as dangling bonds.

Abstract: Provided are superconducting circuits, methods of operating these superconducting circuits, and methods of determining processing conditions for operating these superconducting circuits. A superconducting circuit includes a superconducting element, a conducting element, and a dielectric element disposed between the superconducting element and the conducting element. The conducting element may be another superconducting element, a resonating element, or a conducting casing. During operation of the superconducting element a direct current (DC) voltage is applied between the superconducting element and the conducting element. This application of the DC voltage reduces average microwave absorption of the dielectric element. In some embodiments, when the DC voltage is first applied, the microwave absorption may initially rise and then fall below the no-voltage absorption level.

Abstract: An airbag module including an inflator and an inflatable airbag is provided. The inflatable airbag may include a first portion comprising at least one fold configured to form at least one vertical pleat, a second portion comprising at least one fold configured to form at least one horizontal pleat and a third portion configured to form a roll.

Abstract: A tunnel barrier layer in a superconducting device, such as a Josephson junction, is made from catalytically grown silicon dioxide at a low temperature (<100 C, e.g., 20-30 C) that does not facilitate oxidation or silicide formation at the superconducting electrode interface. The tunnel barrier begins as a silicon layer deposited on a superconducting electrode and covered by a thin, oxygen-permeable catalytic layer. Oxygen gas is dissociated on contact with the catalytic layer, and the resulting oxygen atoms pass through the catalytic layer to oxidize the underlying silicon. The reaction self-limits when all the silicon is converted to silicon dioxide.

Abstract: Amorphous silicon (a-Si) is hydrogenated for use as a dielectric (e.g., an interlayer dielectric) for superconducting electronics. A hydrogenated a-Si layer is formed on a substrate by CVD or sputtering. The hydrogen may be integrated during or after the a-Si deposition. After the layer is formed, it is first annealed in an environment of high hydrogen chemical potential and subsequently annealed in an environment of low hydrogen chemical potential. Optionally, the a-Si (or an H-permeable overlayer, if added) may be capped with a hydrogen barrier before removing the substrate from the environment of low hydrogen chemical potential.

Abstract: A tunnel barrier layer in a superconducting device, such as a Josephson junction, is made from catalytically grown silicon dioxide at a low temperature (<100 C, e.g., 20-30 C) that does not facilitate oxidation or silicide formation at the superconducting electrode interface. The tunnel barrier begins as a silicon layer deposited on a superconducting electrode and covered by a thin, oxygen-permeable catalytic layer. Oxygen gas is dissociated on contact with the catalytic layer, and the resulting oxygen atoms pass through the catalytic layer to oxidize the underlying silicon. The reaction self-limits when all the silicon is converted to silicon dioxide.

Abstract: An amorphous silicon (a-Si) dielectric for superconducting electronics is fabricated with reduced loss tangent by fluorine passivation throughout the bulk of the layer. Complete layers or thinner sub-layers of a-Si are formed by physical vapor deposition at low temperatures (<350 C, e.g. ˜200 C) to prevent reaction with superconducting materials, then exposed to fluorine. The fluorine may be a component of a gas or plasma, or it may be a component of an interface layer. The fluorine is driven into the a-Si by heat (e.g., <350 C) or impact to passivate defects such as dangling bonds.

Abstract: A dielectric for superconducting electronics (e.g., amorphous silicon, silicon oxide, or silicon nitride) is fabricated with reduced loss tangent by fluorine passivation throughout the bulk of the layer. A fluorinant (gas or plasma) is injected into a process chamber, either continuously or as a series of pulses, while the dielectric is being formed by chemical vapor deposition on a substrate. To further reduce defects, the silicon may be deposited from a silicon precursor that includes multiple co-bonded silicon atoms, such as disilane or trisilane.

Abstract: An airbag module including an inflator and an inflatable airbag is provided. The inflatable airbag may include a first portion comprising at least one fold configured to form at least one vertical pleat, a second portion comprising at least one fold configured to form at least one horizontal pleat and a third portion configured to form a roll.

Abstract: An airbag device configured to deploy along an interior side of a passenger compartment of a vehicle may include a gas generator and an inflatable airbag. The inflatable airbag may include a plurality of inflatable chambers configured to be inflated by the gas generator. A first inflatable chamber may be tethered to at least a second inflatable chamber by a connection member. The airbag may be configured so that when the airbag is inflated the connection member restrains the separation of the first and second inflatable chambers and forces at least one of the inflatable chambers inboard so that the plurality of inflatable chambers form a convex profile along a plane perpendicular to the side of the passenger compartment.

Abstract: An airbag module including an inflatable airbag cushion having a first panel and a second panel interconnected by a seam, an inflator for inflating the airbag cushion, and a support having a first end and a second end. The first end is coupled to the first panel at a first joint without the use of stitching and the second end is coupled to the second panel at a second joint without the use of stitching. The first and second joints are provided between the seam and an inflatable chamber formed by the first and second panels.

Abstract: A side curtain air bag module for a motor vehicle includes an inflatable cushion, an inflator, and a tether. The inflatable cushion includes an inlet and an inflatable portion, the inflatable portion including an inboard layer and an outboard layer. The inflator is in fluidic communication with the inlet and is configured to inflate the inflatable cushion. The tether includes a first end coupled to the inflatable cushion at a first coupling location on an inboard side of the inflatable cushion. During inflation, the tether is configured to be in tension prior to an upper portion of the inboard layer being in tension, the upper portion of the inboard layer extending generally upward from the first coupling location.

Abstract: An airbag module including an inflatable airbag cushion having a first panel and a second panel interconnected by a seam, an inflator for inflating the airbag cushion, and a support having a first end and a second end. The first end is coupled to the first panel at a first joint without the use of stitching and the second end is coupled to the second panel at a second joint without the use of stitching. The first and second joints are provided between the seam and an inflatable chamber formed by the first and second panels.

Abstract: An airbag device configured to deploy along an interior side of a passenger compartment of a vehicle may include a gas generator and an inflatable airbag. The inflatable airbag may include a plurality of inflatable chambers configured to be inflated by the gas generator. A first inflatable chamber may be tethered to at least a second inflatable chamber by a connection member. The airbag may be configured so that when the airbag is inflated the connection member restrains the separation of the first and second inflatable chambers and forces at least one of the inflatable chambers inboard so that the plurality of inflatable chambers form a convex profile along a plane perpendicular to the side of the passenger compartment.

Abstract: An airbag is provided which includes at least one fabric panel and a structural seam. The structural seam includes an adhesive but does not include stitching. Such stitching tends to weaken the fabric of airbags and causes a higher denier fabric with higher strength to be used to offset the loss in strength, but this in turn produces an airbag of greater weight due to the high denier fabric. By providing an airbag with a structural seam provided by an adhesive without stitching, an airbag may be lighter and may be inflated in less time.

Abstract: A side curtain air bag module for a motor vehicle includes an inflatable cushion, an inflator, and a tether. The inflatable cushion includes an inlet and an inflatable portion, the inflatable portion including an inboard layer and an outboard layer. The inflator is in fluidic communication with the inlet and is configured to inflate the inflatable cushion. The tether includes a first end coupled to the inflatable cushion at a first coupling location on an inboard side of the inflatable cushion. During inflation, the tether is configured to be in tension prior to an upper portion of the inboard layer being in tension, the upper portion of the inboard layer extending generally upward from the first coupling location.