Abstract: A substrate processing system includes an upper chamber and a gas delivery system to supply a gas mixture to the upper chamber. An RF generator generates plasma in the upper chamber. A lower chamber includes a substrate support. A dual ion filter is arranged between the upper chamber and the lower chamber. The dual ion filter includes an upper filter including a first plurality of through holes configured to filter ions. A lower filter includes a second plurality of through holes configured to control plasma uniformity.

Abstract: A showerhead for a processing chamber in a substrate processing system includes an upper portion having a lower surface and an upper surface and a faceplate. A lower surface of the faceplate is below the lower surface of the upper portion such that the showerhead extends into an interior volume of the processing chamber and the faceplate includes a plurality of holes arranged in a pattern to provide fluid communication between a remote plasma source above the showerhead and the interior volume of the processing chamber. A sidewall extends upward from an outer edge of the faceplate between the faceplate and the upper portion and the upper portion extends radially outward from the sidewall of the showerhead and is configured to be mounted on a sidewall of the processing chamber. A heater is embedded in the upper portion of the showerhead.

Abstract: A substrate processing system includes an upper chamber and a gas delivery system to supply a gas mixture to the upper chamber. An RF generator generates plasma in the upper chamber. A lower chamber includes a substrate support. A dual ion filter is arranged between the upper chamber and the lower chamber. The dual ion filter includes an upper filter including a first plurality of through holes configured to filter ions. A lower filter includes a second plurality of through holes configured to control plasma uniformity.

Abstract: A side tuning ring for a gas distribution device of a substrate processing system includes a first ring adjacent to a faceplate of the gas distribution device. The first ring surrounds the faceplate and defines a first plenum, communicates with a first gas source, and includes a first plurality of holes arranged to direct gas from the first gas source into a process chamber at a first angle. A second ring is adjacent to the first ring. The second ring surrounds the first ring and defines a second plenum, communicates with at least one of the first gas source and a second gas source, and includes a second plurality of holes arranged to direct gas from the at least one of the first gas source and the second gas source into the process chamber at the first angle or a second angle. The first ring and the second ring are detachable from the faceplate of the gas distribution device.

Abstract: A side tuning ring for a gas distribution device of a substrate processing system includes a first ring adjacent to a faceplate of the gas distribution device. The first ring surrounds the faceplate and defines a first plenum, communicates with a first gas source, and includes a first plurality of holes arranged to direct gas from the first gas source into a process chamber at a first angle. A second ring is adjacent to the first ring. The second ring surrounds the first ring and defines a second plenum, communicates with at least one of the first gas source and a second gas source, and includes a second plurality of holes arranged to direct gas from the at least one of the first gas source and the second gas source into the process chamber at the first angle or a second angle. The first ring and the second ring are detachable from the faceplate of the gas distribution device.

Abstract: A method for operating a substrate processing chamber includes after performing a process using a fluorine-based gas in the substrate processing chamber: a) during a first predetermined period, supplying a gas mixture to the substrate processing chamber including one or more gases selected from a group consisting of molecular oxygen, molecular nitrogen, nitric oxide and nitrous oxide and supplying RF power to strike plasma in the substrate processing chamber; b) during a second predetermined period after the first predetermined period, supplying molecular hydrogen gas and RF power to the substrate processing chamber; c) repeating a) and b) one or more times; d) purging the substrate processing chamber with molecular nitrogen gas; e) increasing chamber pressure; f) evacuating the substrate processing chamber; and g) repeating d), e) and f) one or more times.