Patents by Inventor Andrew T. Heitsch

Andrew T. Heitsch has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10340144
    Abstract: Disclosed herein is a method for doping a substrate, comprising disposing a coating of a composition comprising a copolymer, a dopant precursor and a solvent on a substrate; where the copolymer is capable of phase segregating and embedding the dopant precursor while in solution; and annealing the substrate at a temperature of 750 to 1300° C. for 0.1 second to 24 hours to diffuse the dopant into the substrate. Disclosed herein too is a semiconductor substrate comprising embedded dopant domains of diameter 3 to 30 nanometers; where the domains comprise Group 13 or Group 15 atoms, wherein the embedded spherical domains are located within 30 nanometers of the substrate surface.
    Type: Grant
    Filed: January 12, 2017
    Date of Patent: July 2, 2019
    Assignees: ROHM AND HAAS ELECTRONIC MATERIALS LLC, DOW GLOBAL TECHNOLOGIES, LLC, THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
    Inventors: Rachel A. Segalman, Peter Trefonas, III, Bhooshan C. Popere, Andrew T. Heitsch
  • Publication number: 20170194150
    Abstract: Disclosed herein is a method for doping a substrate, comprising disposing a coating of a composition comprising a copolymer, a dopant precursor and a solvent on a substrate; where the copolymer is capable of phase segregating and embedding the dopant precursor while in solution; and annealing the substrate at a temperature of 750 to 1300° C. for 0.1 second to 24 hours to diffuse the dopant into the substrate. Disclosed herein too is a semiconductor substrate comprising embedded dopant domains of diameter 3 to 30 nanometers; where the domains comprise Group 13 or Group 15 atoms, wherein the embedded spherical domains are located within 30 nanometers of the substrate surface.
    Type: Application
    Filed: January 12, 2017
    Publication date: July 6, 2017
    Inventors: Rachel A. Segalman, Peter Trefonas, III, Bhooshan C. Popere, Andrew T. Heitsch
  • Patent number: 9576799
    Abstract: Disclosed herein is a method for doping a substrate, comprising disposing a coating of a composition comprising a copolymer, a dopant precursor and a solvent on a substrate; where the copolymer is capable of phase segregating and embedding the dopant precursor while in solution; and annealing the substrate at a temperature of 750 to 1300° C. for 0.1 second to 24 hours to diffuse the dopant into the substrate. Disclosed herein too is a semiconductor substrate comprising embedded dopant domains of diameter 3 to 30 nanometers; where the domains comprise Group 13 or Group 15 atoms, wherein the embedded spherical domains are located within 30 nanometers of the substrate surface.
    Type: Grant
    Filed: April 29, 2015
    Date of Patent: February 21, 2017
    Assignees: DOW GLOBAL TECHNOLOGIES, LLC, ROHM AND HAAS ELECTRONIC MATERIALS LLC, THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
    Inventors: Rachel A. Segalman, Peter Trefonas, III, Bhooshan C. Popere, Andrew T. Heitsch
  • Publication number: 20160035572
    Abstract: Disclosed herein is a method for doping a substrate, comprising disposing a coating of a composition comprising a copolymer, a dopant precursor and a solvent on a substrate; where the copolymer is capable of phase segregating and embedding the dopant precursor while in solution; and annealing the substrate at a temperature of 750 to 1300° C. for 0.1 second to 24 hours to diffuse the dopant into the substrate. Disclosed herein too is a semiconductor substrate comprising embedded dopant domains of diameter 3 to 30 nanometers; where the domains comprise Group 13 or Group 15 atoms, wherein the embedded spherical domains are located within 30 nanometers of the substrate surface.
    Type: Application
    Filed: April 29, 2015
    Publication date: February 4, 2016
    Inventors: Rachel A. Segalman, Peter Trefonas, III, Bhooshan C. Popere, Andrew T. Heitsch
  • Patent number: 8858707
    Abstract: A method for making silicon nanorods is provided. In accordance with the method, Au nanocrystals are reacted with a silane in a liquid medium to form nanorods, wherein each of said nanorods has an average diameter within the range of about 1.2 nm to about 10 nm and has a length within the range of about 1 nm to about 100 nm.
    Type: Grant
    Filed: April 14, 2010
    Date of Patent: October 14, 2014
    Assignee: Merck Patent GmbH
    Inventors: Andrew T. Heitsch, Colin M. Hessel, Brian A. Korgel
  • Publication number: 20120077034
    Abstract: A method for making silicon nanorods is provided. In accordance with the method, Au nanocrystals are reacted with a silane in a liquid medium to form nanorods, wherein each of said nanorods has an average diameter within the range of about 1.2 nm to about 10 nm and has a length within the range of about 1 nm to about 100 nm.
    Type: Application
    Filed: April 14, 2010
    Publication date: March 29, 2012
    Inventors: Andrew T. Heitsch, Colin M. Hessel, Brian A. Korgel