Abstract: A method for fabricating a thermal optical heating element capable of adjusting refractive index of an optical waveguide is disclosed. A silicon block is initially formed on a cladding layer on a silicon substrate. The silicon block is located in close proximity to an optical waveguide. A cobalt layer is deposited on the silicon block. The silicon block is then annealed to cause the cobalt layer to react with the silicon block to form a cobalt silicide layer. The silicon block is again annealed to cause the cobalt silicide layer to transform into a cobalt di-silicide layer.

Abstract: An improved method for manufacturing a vertical germanium detector is disclosed. Initially, a detector window is opened through an oxide layer on a single crystalline substrate. Next, a single crystal germanium layer is grown within the detector window, and an amorphous germanium layer is grown on the oxide layer. The amorphous germanium layer is then polished and removed until only a portion of the amorphous germanium layer is located around the single crystal germanium layer. A tetraethyl orthosilicate (TEOS) layer is deposited on the amorphous germanium layer and the single crystal germanium layer. An implant is subsequently performed on the single crystal germanium layer. After an oxide window has been opened on the TEOS layer, a titanium layer is deposited on the single crystal germanium layer to form a vertical germanium detector.

Abstract: A method for manufacturing multiple layers of waveguides is disclosed. Initially, a first cladding layer is deposited on a substrate, a first inner cladding layer is then deposited on the first cladding layer, and a first waveguide material is deposited on the first inner cladding layer. The first inner cladding layer and the first waveguide material are then selectively etched to form a first waveguide layer. Next, a second inner cladding layer followed by a second cladding layer are deposited on the first waveguide layer. The second inner cladding layer and the second cladding layer are removed by using a chemical-mechanical polishing process selective to the first waveguide material. A third inner cladding layer followed by a second waveguide material are deposited on the first waveguide material. The third inner cladding layer and the second waveguide material are then selectively etched to form a second waveguide layer.

Abstract: A method for fabricating photonic and electronic devices on a substrate is disclosed. Multiple slabs are initially patterned and etched on a layer of a substrate. An electronic device is fabricated on a first one of the slabs and a photonic device is fabricated on a second one of the slabs, such that the electronic device and the photonic device are formed on the same layer of the substrate.

Abstract: For those optical waveguides that require the deposition of a thick film and a high-temperature anneal to create an appropriate waveguide medium, wafer warping, bowing or dishing is reduced or eliminated by depositing a film of the same thickness on the backside of the wafer so as to relieve film stress during the deposition and annealing process. In one embodiment the waveguide medium is silicon oxynitride, although other depositable thick films may be utilized in place of the silicon oxynitride.

Abstract: A method for manufacturing a thermoelectric cooling mechanism for an integrated circuit is disclosed. Initially, electric circuits are formed on one side of a wafer. Subsequently, thermoelectric cooling devices are formed on an opposite side of the same wafer. Specifically, the thermoelectric cooling devices are formed by depositing a first conductive layer, depositing a layer of Peltier material on top of the first conductive layer, building a set of N30 regions and P30 regions within the Peltier material layer, and depositing a second conductive layer on top of the Peltier material layer.

Abstract: An integrated circuit device having a built-in thermoelectric cooling mechanism is disclosed. Electric circuits are formed on one side of a wafer. Subsequently, multiple thermoelectric cooling devices are formed on another side of the wafer.

Abstract: An integrated circuit device having a built-in thermoelectric cooling mechanism is disclosed. The integrated circuit device includes a package and a substrate. Contained within the package, the substrate has a front side and a back side. Electric circuits are fabricated on the front side of the substrate, and multiple thermoelectric cooling devices are fabricated on the back side of the same substrate. The thermoelectric cooling devices are utilized to dissipate heat generated by the electric circuits to the package.

Abstract: Positive lithographic patterns are produced by imagewise exposing to actinic light, x-ray or e-beam a polymer having pendant recurring groups selected from the group consisting of —COO—CH2—CH(OH)—(CH2)x—H wherein x is 0-20; —COO—CH2—CH(OH)—(CH2)y—HE—(CH2)z—H; and mixtures thereof; wherein HE is O or S; and each y and z individually is 1-18; and mixtures thereof; and then developing the polymer in an aqueous base developer. The developer can be any of the conventional or commonly used ones as well as the special developers discussed below. Positive lithographic patterns are also produced by imagewise exposing to actinic light, x-ray or e-beam a photosensitive polymeric material to provide free carboxylic acid groups; and then developing by contacting with an aqueous developer solution of about 0.

Abstract: Positive lithographic patterns are produced by imagewise exposing to actinic light, x-ray or e-beam a polymer having pendant recurring groups selected from the group consisting of--COO--CH.sub.2 --CH(OH)--(CH.sub.2).sub.x --H wherein x is 0-20;--COO--CH.sub.2 --CH(OH)--(CH.sub.2).sub.y --HE--(CH.sub.2).sub.z --H; and mixtures thereof; wherein HE is O or S; and each y and z individually is 1-18; and mixtures thereof; and then developing the polymer in an aqueous base developer. The developer can be any of the conventional or commonly used ones as well as the special developers discussed below.Positive lithographic patterns are also produced by imagewise exposing to actinic light, x-ray or e-beam a photosensitive polymeric material to provide free carboxylic acid groups; and then developing by contacting with an aqueous developer solution of about 0.

Abstract: Positive lithographic patterns are produced by imagewise exposing to actinic light, x-ray or e-beam a polymer having pendant recurring groups selected from the group consisting of--COO--CH.sub.2 --CH(OH)--(CH.sub.2).sub.x --H wherein x is 0-20;--COO--CH.sub.2 --CH(OH)--(CH.sub.2).sub.y --HE--(CH.sub.2).sub.Z --H; and mixturesthereof; wherein HE is O or S; and each y and z individually is 1-18; and mixtures thereof; and then developing the polymer in an aqueous base developer. The developer can be any of the conventional or commonly used ones as well as the special developers discussed below.Positive lithographic patterns are also produced by imagewise exposing to actinic light, x-ray or e-beam a photosensitive polymeric material to provide free carboxylic acid groups; and then developing by contacting with an aqueous developer solution of about 0.

Abstract: Positive lithographic patterns are produced by imagewise exposing to actinic light, x-ray or e-beam copolymers of 2-hydroxyalkyl methacrylate and/or 2-hydroxyalkyl acrylate with alkylmethacrylate and/or alkylacrylate, and then developing the polymer in a developer.

Abstract: An X-ray mask pellicle is capable of protecting the X-ray mask from contaminants and the wafer from contact with the X-ray absorber material of the mask. The X-ray mask pellicle is sufficiently thin to allow X-ray exposure at the required mask to wafer gaps yet is sufficiently durable, replaceable, tough and X-ray resistant to be used in X-ray lithography. A thin (organic or inorganic) X-ray mask pellicle to be placed covering the X-ray mask pattern area is fabricated as a thin film and attached to a support ring. A selected area of the pellicle film, tailored to cover the absorber pattern in the X-ray mask, is etched to decrease its thickness to below 2 .mu.m. If the thin film of the pellicle is not itself conductive, a thin conductive film may be coated on both sides. In an alternative embodiment, the separation between the pellicle and the X-ray mask can be achieved by forming the mask with a stepped profile.

Abstract: The present invention relates to an improved method of depositing a diamond-like carbon film onto a substrate by low temperature plasma-enhanced chemical vapor deposition (PECVD) from a hydrocarbon/helium plasma. More specifically, the diamond-like carbon films of the present invention are deposited onto the substrate by employing acetylene which is heavily diluted with helium as the plasma gas. The films formed using the process of the present invention are characterized as being amorphous and having dielectric strengths comparable to those normally observed for diamond films. More importantly, however is that the films produced herein are thermally stable, optically transparent, absorbent in the ultraviolet range and hard thus making them extremely desirable for a wide variety of applications.

Abstract: A manifold design which provides for highly efficient cooling or heating of flowing liquids using a small number of thermoelectric elements is constructed of a thermally insulting material. On exterior surface of at least two sides of the manifold, open channel are formed for use in defining a liquid flow path. On the interior of the manifold there are a plurality of internal chambers, one internal chamber for each side having an exterior channel. These internal chambers are essentially equal in size and are preferably symmetrically disposed within the manifold in alignment with the sides. The channels on the outside of the manifold and the chambers on the inside of the manifold are connected in such a way that liquid would flow in an alternating series of channel and chamber in a single liquid flow path through the manifold. The channels on the exterior of the manifold are sealed by placing a thermally conductive cover plate over each side of the manifold.

Abstract: The present invention relates to an improved method of depositing a diamond-like carbon film onto a substrate by low temperature plasma-enhanced chemical vapor deposition (PECVD) from a hydrocarbon/helium plasma. More specifically, the diamond like carbon films of the present invention are deposited onto the substrate by employing acetylene which is heavily diluted with helium as the plasma gas. The films formed using the process of the present invention are characterized as being amorphous and having dielectric strengths comparable to those normally observed for diamond films. More importantly, however is that the films produced herein are thermally stable, optically transparent, absorbent in the ultraviolet range and hard thus making them extremely desirable for a wide variety of applications.

Abstract: Methods, apparatus and manufacturing processes are set forth which reduce the affects of scattered light in electro-optical devices, fiber optic links, etc., through the use of radiation sensitive compounds which, for example, can be easily applied to a semiconductor wafer when fabricating a solid state integrated receiver. According to the invention, a given radiation sensitive compound is transformed into a light blocking material (i.e., a material that will not transmit light) as a result of a lithographic (and in some cases a photolithographic) process. The resultant blocking material may be easily removed from any regions which is designed to receive transmitted light (for example, detector regions); while any other light sensitive regions remain covered (i.e., are protected) by the blocking material at the conclusion of the process.