Patents by Inventor Andrew W. McCullough
Andrew W. McCullough has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 7403266Abstract: A maskless lithography system that writes patterns on an object. The system can include an illumination system, the object, spatial light modulators (SLMs), and a controller. The SLMs can pattern light from the illumination system before the object receives the light. The SLMs can include a leading set and a trailing set of the SLMs. The SLMs in the leading and trailing sets change based on a scanning direction of the object. The controller can transmit control signals to the SLMs based on at least one of light pulse period information, physical layout information about the SLMs, and scanning speed of the object. The system can also correct for dose non-uniformity using various methods.Type: GrantFiled: January 13, 2006Date of Patent: July 22, 2008Assignee: ASML Holding N.V.Inventors: Arno Bleeker, Wenceslao A. Cebuhar, Jason Douglas Hintersteiner, Andrew W. McCullough, Solomon S. Wasserman, Karel Diederick Van Der Mast
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Patent number: 7105836Abstract: Systems and methods eliminate vibrations produced by coolant fluid flowing through a short stroke stage and prevent change in thermally-induced distortion of the short stroke stage by maintaining the temperature and temperature distribution within the short stroke stage constant regardless of actinic heat load incident on a reticle. This is done by: (1) conducting heat through the reticle and short stroke stage components, (2) radiatively transferring heat from the short stroke stage to a long stroke stage, and (3) using convection and a cooling system to dissipate heat from the long stroke stage. The short stroke stage can be magnetically levitated from the long stroke stage. This way there is no physical contact, but the long stroke stage's movements can still control the short stroke stage's movements. By not physically contacting the long stroke stage, the short stroke stage is not affected by vibrations in the long stroke stage caused by the flowing coolant.Type: GrantFiled: October 18, 2002Date of Patent: September 12, 2006Assignee: ASML Holding N.V.Inventors: Santiago del Puerto, Daniel N. Galburt, Andrew W. McCullough, Stephen Roux, Joost Jeroen Ottens
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Patent number: 7092070Abstract: An illumination system having an array optical element with different illumination regions corresponding or matched to different line width variations printed on a photosensitive material. The array optical element may be a filter, diffractive optical element, or micro lens array having illumination regions producing different types of illumination properties or characteristics. Each of the illumination regions are matched or correspond to a respective region on a patterning device to provide optimized exposure of a photosensitive material. The optical element may be used to tailor a conventional illumination system to the unique characteristics of the projection optics used in a system, thereby compensating for vertical and horizontal bias or variations in line width for features oriented in the vertical and horizontal direction.Type: GrantFiled: October 12, 2004Date of Patent: August 15, 2006Assignee: ASML Holding N.V.Inventors: Andrew W. McCullough, Gregg M. Gallatin
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Patent number: 7029804Abstract: A reticle or mask for use in projecting a circuit pattern, having a transparent substrate with a reflective or dielectric layer thereon. An opaque or blocking layer is placed over the reflective layer. The opaque layer then has a predetermined circuit pattern etched therein. In one embodiment, the opaque layer and the reflective layer are the same size. In another embodiment, the opaque layer has a size larger than the reflective layer. This permits the opaque layer to be adjacent the substrate, which is advantageous when projection optics having a high numerical aperture are used. The reticle of the present invention has particular advantage when using source wavelengths of between 157 nanometers and 365 nanometers. The reflective layer or land has a reflectance greater than chrome, and preferably greater than sixty percent. Therefore, the reflective layer greatly reduces reticle warm-up and thermal distortion.Type: GrantFiled: August 25, 2004Date of Patent: April 18, 2006Assignee: ASML Holding N.V.Inventor: Andrew W. McCullough
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Patent number: 7014963Abstract: A reticle or mask for use in projecting a circuit pattern, having a transparent substrate with a reflective or dielectric layer thereon. An opaque or blocking layer is placed over the reflective layer. The opaque layer then has a predetermined circuit pattern etched therein. In one embodiment, the opaque layer and the reflective layer are the same size. In another embodiment, the opaque layer has a size larger than the reflective layer. This permits the opaque layer to be adjacent the substrate, which is advantageous when projection optics having a high numerical aperture are used. The reticle of the present invention has particular advantage when using source wavelengths of between 157 nanometers and 365 nanometers. The reflective layer or land has a reflectance greater than chrome, and preferably greater than sixty percent. Therefore, the reflective layer greatly reduces reticle warm-up and thermal distortion.Type: GrantFiled: December 16, 2003Date of Patent: March 21, 2006Assignee: ASML Holding N.V.Inventor: Andrew W. McCullough
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Patent number: 6967713Abstract: A reticle stage having a range of motion sufficient to scan at least two distinct reticles. In a photolithographic process, a reticle stage having an extended range of motion and containing at least two reticles, preferably a phase shift reticle and a trim reticle, is used. The reticle stage scans the two reticles across an illumination field. The image of each reticle is projected by projection optics onto a photosensitive substrate on a wafer stage. The field on the photosensitive substrate is exposed with the image of the first reticle and subsequently exposed with the image of the second reticle. The projection of an image of a first and second reticle onto the same field in a scanning operation greatly facilitates throughput of the photolithographic tool or device. Reticle changes are eliminated when at least two reticles are needed to expose a single field. The use of multiple reticles to expose a single field is necessary when a phase shift mask and related trim mask are used.Type: GrantFiled: September 14, 2004Date of Patent: November 22, 2005Assignee: ASML Holding N.V.Inventors: Andrew W. McCullough, Christopher Mason, Louis Markoya, Harry Sewell
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Publication number: 20040239908Abstract: A maskless lithography system that writes patterns on an object. The system can include an illumination system, the object, spatial light modulators (SLMs), and a controller. The SLMs can pattern light from the illumination system before the object receives the light. The SLMs can include a leading set and a trailing set of the SLMs. The SLMs in the leading and trailing sets change based on a scanning direction of the object. The controller can transmit control signals to the SLMs based on at least one of light pulse period information, physical layout information about the SLMs, and scanning speed of the object. The system can also correct for dose non-uniformity using various methods.Type: ApplicationFiled: May 30, 2003Publication date: December 2, 2004Applicant: ASML Holding N.V.Inventors: Arno Bleeker, Wenceslao A. Cebuhar, Jason D. Hintersteiner, Andrew W. McCullough, Solomon Wasserman
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Patent number: 6822728Abstract: An illumination system used in photolithography for the manufacture of semiconductors having an array optical element with different illumination regions corresponding or matched to different line width variations printed on a photosensitive substrate. The array optical element may be a filter, diffractive optical element, or micro lens array having illumination regions producing different types of illumination properties or characteristics. Each of the illumination regions are matched or correspond to a respective region on the reticle to provide optimized exposure of a photosensitive resist covered wafer. The optical element of the present invention may be used to tailor a conventional illumination system to the unique characteristics of the projection optics used in the photolithographic system, thereby compensating for vertical and horizontal bias or variations in line width for features oriented in the vertical and horizontal direction.Type: GrantFiled: September 23, 2003Date of Patent: November 23, 2004Assignee: ASML Holding N.V.Inventors: Andrew W. McCullough, Gregg M. Gallatin
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Patent number: 6800408Abstract: A reticle stage having a range of motion sufficient to scan at least two distinct reticles. In a photolithographic process, a reticle stage having an extended range of motion and containing at least two reticles, preferably a phase shift reticle and a trim reticle, is used. The reticle stage scans the two reticles across an illumination field. The image of each reticle is projected by projection optics onto a photosensitive substrate on a wafer stage. The field on the photosensitive substrate is exposed with the image of the first reticle and subsequently exposed with the image of the second reticle. The projection of an image of a first and second reticle onto the same field in a scanning operation greatly facilitates throughput of the photolithographic tool or device. Reticle changes are eliminated when at least two reticles are needed to expose a single field. The use of multiple reticles to expose a single field is necessary when a phase shift mask and related trim mask are used.Type: GrantFiled: September 4, 2003Date of Patent: October 5, 2004Assignee: ASML Holding N.V.Inventors: Andrew W. McCullough, Christopher Mason, Luis Markoya, Harry Sewell
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Publication number: 20040131954Abstract: A reticle or mask for use in projecting a circuit pattern, having a transparent substrate with a reflective or dielectric layer thereon. An opaque or blocking layer is placed over the reflective layer. The opaque layer then has a predetermined circuit pattern etched therein. In one embodiment, the opaque layer and the reflective layer are the same size. In another embodiment, the opaque layer has a size larger than the reflective layer. This permits the opaque layer to be adjacent the substrate, which is advantageous when projection optics having a high numerical aperture are used. The reticle of the present invention has particular advantage when using source wavelengths of between 157 nanometers and 365 nanometers. The reflective layer or land has a reflectance greater than chrome, and preferably greater than sixty percent. Therefore, the reflective layer greatly reduces reticle warm-up and thermal distortion.Type: ApplicationFiled: December 16, 2003Publication date: July 8, 2004Applicant: ASML Holding N.V.Inventor: Andrew W. McCullough
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Publication number: 20040079518Abstract: Systems and methods eliminate vibrations produced by coolant fluid flowing through a short stroke stage and prevent change in thermally-induced distortion of the short stroke stage by maintaining the temperature and temperature distribution within the short stroke stage constant regardless of actinic heat load incident on a reticle. This is done by: (1) conducting heat through the reticle and short stroke stage components, (2) radiatively transferring heat from the short stroke stage to a long stroke stage, and (3) using convection and a cooling system to dissipate heat from the long stroke stage. The short stroke stage can be magnetically levitated from the long stroke stage. This way there is no physical contact, but the long stroke stage's movements can still control the short stroke stage's movements. By not physically contacting the long stroke stage, the short stroke stage is not affected by vibrations in the long stroke stage caused by the flowing coolant.Type: ApplicationFiled: October 18, 2002Publication date: April 29, 2004Applicant: ASML US, IncInventors: Santiago del Puerto, Daniel N. Galburt, Andrew W. McCullough, Stephen Roux, Joost Jeroen Ottens
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Publication number: 20040057033Abstract: An illumination system used in photolithography for the manufacture of semiconductors having an array optical element with different illumination regions corresponding or matched to different line width variations printed on a photosensitive substrate. The array optical element may be a filter, diffractive optical element, or micro lens array having illumination regions producing different types of illumination properties or characteristics. Each of the illumination regions are matched or correspond to a respective region on the reticle to provide optimized exposure of a photosensitive resist covered wafer. The optical element of the present invention may be used to tailor a conventional illumination system to the unique characteristics of the projection optics used in the photolithographic system, thereby compensating for vertical and horizontal bias or variations in line width for features oriented in the vertical and horizontal direction.Type: ApplicationFiled: September 23, 2003Publication date: March 25, 2004Inventors: Andrew W. McCullough, Gregg M. Gallatin
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Publication number: 20040043311Abstract: A reticle stage having a range of motion sufficient to scan at least two distinct reticles. In a photolithographic process, a reticle stage having an extended range of motion and containing at least two reticles, preferably a phase shift reticle and a trim reticle, is used. The reticle stage scans the two reticles across an illumination field. The image of each reticle is projected by projection optics onto a photosensitive substrate on a wafer stage. The field on the photosensitive substrate is exposed with the image of the first reticle and subsequently exposed with the image of the second reticle. The projection of an image of a first and second reticle onto the same field in a scanning operation greatly facilitates throughput of the photolithographic tool or device. Reticle changes are eliminated when at least two reticles are needed to expose a single field. The use of multiple reticles to expose a single field is necessary when a phase shift mask and related trim mask are used.Type: ApplicationFiled: September 4, 2003Publication date: March 4, 2004Applicant: ASML Holding N.V.Inventors: Andrew W. McCullough, Christopher Mason, Louis Markoya, Harry Sewell
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Patent number: 6686101Abstract: A reticle or mask for use in projecting a circuit pattern on a photosensitive resist covered wafer having a transparent substrate with a reflective or dielectric layer thereon. An opaque or blocking layer, for example chrome or chromium, is placed over the reflective layer. The opaque layer then has a predetermined circuit pattern etched therein. In one embodiment, the opaque layer and the reflective layer are the same size. In another embodiment, the opaque layer has a size larger than the reflective layer. This permits the opaque layer to be adjacent the substrate which is advantageous when projection optics having a high numerical aperture are used. The reticle of the present invention has particular advantage when high throughput photolithographic tools are used having an illumination source of high energy flux with a wavelength of between 157 nanometers and 365 nanometers. Illumination in this wavelength range has considerable absorption in chrome, a common opaque material used in reticles.Type: GrantFiled: July 17, 2002Date of Patent: February 3, 2004Assignee: ASML Holding N.V.Inventor: Andrew W. McCullough
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Patent number: 6628370Abstract: An illumination system used in photolithography for the manufacture of semiconductors having an array optical element with different illumination regions corresponding or matched to different line width variations printed on a photosensitive substrate. The array optical element may be a filter, diffractive optical element, or micro lens array having illumination.regions producing different types of illumination properties or characteristics. Each of the illumination regions are matched or correspond to a respective region on the reticle to provide optimized exposure of a photosensitive resist covered wafer. The optical element of the present invention may be used to tailor a conventional illumination system to the unique characteristics of the projection optics used in the photolithographic system, thereby compensating for vertical and horizontal bias or variations in line width for features oriented in the vertical and horizontal direction.Type: GrantFiled: June 22, 2000Date of Patent: September 30, 2003Inventors: Andrew W. McCullough, Gregg M. Gallatin
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Patent number: 6628372Abstract: A reticle stage having a range of motion sufficient to scan at least two distinct reticles. In a photolithographic process, a reticle stage having an extended range of motion and containing at least two reticles, preferably a phase shift reticle and a trim reticle, is used. The reticle stage scans the two reticles across an illumination field. The image of each reticle is projected by projection optics onto a photosensitive substrate on a wafer stage. The field on the photosensitive substrate is exposed with the image of the first reticle and subsequently exposed with the image of the second reticle. The projection of an image of a first and second reticle onto the same field in a scanning operation greatly facilitates throughput of the photolithographic tool or device. Reticle changes are eliminated when at least two reticles are needed to expose a single field. The use of multiple reticles to expose a single field is necessary when a phase shift mask and related trim mask are used.Type: GrantFiled: February 16, 2001Date of Patent: September 30, 2003Inventors: Andrew W. McCullough, Christopher Mason, Louis Markoya, Harry Sewell
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Publication number: 20020182519Abstract: A reticle or mask for use in projecting a circuit pattern on a photosensitive resist covered wafer having a transparent substrate with a reflective or dielectric layer thereon. An opaque or blocking layer, for example chrome or chromium, is placed over the reflective layer. The opaque layer then has a predetermined circuit pattern etched therein. In one embodiment, the opaque layer and the reflective layer are the same size. In another embodiment, the opaque layer has a size larger than the reflective layer. This permits the opaque layer to be adjacent the substrate which is advantageous when projection optics having a high numerical aperture are used. The reticle of the present invention has particular advantage when high throughput photolithographic tools are used having an illumination source of high energy flux with a wavelength of between 157 nanometers and 365 nanometers. Illumination in this wavelength range has considerable absorption in chrome, a common opaque material used in reticles.Type: ApplicationFiled: July 17, 2002Publication date: December 5, 2002Inventor: Andrew W. McCullough
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Patent number: 6444372Abstract: A reticle or mask for use in projecting a circuit pattern on a photosensitive resist covered wafer having a transparent substrate with a reflective or dielectric layer thereon. An opaque or blocking layer, for example chrome or chromium, is placed over the reflective layer. The opaque layer then has a predetermined circuit pattern etched therein. In one embodiment, the opaque layer and the reflective layer are the same size. In another embodiment, the opaque layer has a size larger than the reflective layer. This permits the opaque layer to be adjacent the substrate which is advantageous when projection optics having a high numerical aperture are used. The reticle of the present invention has particular advantage when high throughput photolithographic tools are used having an illumination source of high energy flux with a wavelength of between 157 nanometers and 365 nanometers. Illumination in this wavelength range has considerable absorption in chrome, a common opaque material used in reticles.Type: GrantFiled: October 25, 1999Date of Patent: September 3, 2002Assignee: SVG Lithography Systems, Inc.Inventor: Andrew W. McCullough
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Patent number: 6445439Abstract: A thermal management device for use with a photolithographic apparatus or tool substantially reducing thermal distortion in a reticle. Planar cooling elements are placed adjacent a reticle being illuminated with extreme ultraviolet, EUV, electromagnetic radiation. A heating element provides heat prior to exposure of the reticle by the EUV electromagnetic radiation and the system is in thermal equilibrium. Upon exposure of the EUV electromagnetic radiation, absorption by the reticle causes heat. The heating element is controlled to reduce the heat provided so the extra heat load generated in the reticle during exposure due to absorption of the EUW electromagnetic radiation is compensated for. The reticle therefore experiences no net heat or thermal energy change, and therefore eliminates or substantially reduces both expansion and thermal gradients in the reticle.Type: GrantFiled: December 27, 1999Date of Patent: September 3, 2002Assignee: SVG Lithography Systems, Inc.Inventor: Andrew W. McCullough
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Publication number: 20020115004Abstract: A reticle stage having a range of motion sufficient to scan at least two distinct reticles. In a photolithographic process, a reticle stage having an extended range of motion and containing at least two reticles, preferably a phase shift reticle and a trim reticle, is used. The reticle stage scans the two reticles across an illumination field. The image of each reticle is projected by projection optics onto a photosensitive substrate on a wafer stage. The field on the photosensitive substrate is exposed with the image of the first reticle and subsequently exposed with the image of the second reticle. The projection of an image of a first and second reticle onto the same field in a scanning operation greatly facilitates throughput of the photolithographic tool or device. Reticle changes are eliminated when at least two reticles are needed to expose a single field. The use of multiple reticles to expose a single field is necessary when a phase shift mask and related trim mask are used.Type: ApplicationFiled: February 16, 2001Publication date: August 22, 2002Inventors: Andrew W. McCullough, Christopher Mason, Louis Markoya, Harry Sewell