Abstract: A method for fabricating a thick crack-free dielectric film on a wafer for device fabrication is disclosed herein. A stress-release pattern is fabricated in an oxide layer of the wafer, which surrounds a number of device regions. The stress-release pattern comprises a plurality of recessions, which are spaced periodically along at least one direction. The plurality of recessions interrupt the continuous film during the dielectric film deposition, to prevent cracks from forming in the dielectric film and propagating into the device regions. Such that, a thick crack-free dielectric film can be achieved in the device regions, which are formed by patterning the dielectric layer. Furthermore, conditions of the dielectric film deposition process can be tuned to ensure quality of the deposited dielectric film. Still further, a plurality of deposition runs may be performed to deposit the thick crack-free dielectric film.

Abstract: A method for stretching a plurality of sample isolates, including: trapping the plurality of sample isolates away from a wall of at least one microfluidic channel of a microfluidic flow system; generating a microfluidic flow to stretch the plurality of trapped sample isolates; determining deformation characteristics of the plurality of stretched samples isolates based on one or more frames from an image processing system; and outputting information corresponding to the deformation characteristics.

Abstract: A method for fabricating a thick crack-free dielectric film on a wafer for device fabrication is disclosed herein. A stress-release pattern is fabricated in an oxide layer of the wafer, which surrounds a number of device regions. The stress-release pattern comprises a plurality of recessions, which are spaced periodically along at least one direction. The plurality of recessions interrupt the continuous film during the dielectric film deposition, to prevent cracks from forming in the dielectric film and propagating into the device regions. Such that, a thick crack-free dielectric film can be achieved in the device regions, which are formed by patterning the dielectric layer. Furthermore, conditions of the dielectric film deposition process can be tuned to ensure quality of the deposited dielectric film. Still further, a plurality of deposition runs may be performed to deposit the thick crack-free dielectric film.

Abstract: A method for stretching a plurality of sample isolates, including: trapping the plurality of sample isolates away from a wall of at least one microfluidic channel of a microfluidic flow system; generating a microfluidic flow to stretch the plurality of trapped sample isolates; determining deformation characteristics of the plurality of stretched samples isolates based on one or more frames from an image processing system; and outputting information corresponding to the deformation characteristics.

Abstract: An integrated silicon optical device is capable of being monitored and tuned in real-time. The integrated silicon optical device includes: a bus waveguide, comprising an input port and an output port; an optical microresonator coupled to the bus waveguide, configured to selectively receive light at a desired resonance wavelength from the bus waveguide; a photodetector, configured to electrically read out an operation condition of the optical microresonator; a diode-tuner, configured to blueshift or redshift the resonance wavelength of the optical microresonator; a micro-heater, configured to redshift the resonance wavelength of the optical microresonator; and a control unit, comprising a transimpedance amplifier (TIA) and a microprocessor, configured to implement a two-stage closed-loop tuning scheme.

Abstract: An integrated silicon optical device is capable of being monitored and tuned in real-time. The integrated silicon optical device includes: a bus waveguide, comprising an input port and an output port; an optical microresonator coupled to the bus waveguide, configured to selectively receive light at a desired resonance wavelength from the bus waveguide; a photodetector, configured to electrically read out an operation condition of the optical microresonator; a diode-tuner, configured to blueshift or redshift the resonance wavelength of the optical microresonator; a micro-heater, configured to redshift the resonance wavelength of the optical microresonator; and a control unit, comprising a transimpedance amplifier (TIA) and a microprocessor, configured to implement a two-stage closed-loop tuning scheme.

Abstract: An electrooptically tunable waveguide-coupled microresonator. In one example embodiment, the switch includes a photoalignment layer that enhances control of liquid crystal alignment in the cladding near the coupling region of the microresonator and waveguide.