Abstract: Ion implanter having at least two independent ion generating systems coupled to a single scanning end station. In a preferred embodiment one of the ion generating systems generates ions approximately in the 3-80 keV range and the other system generates ions approximately in the 80-3,000 keV range. The scanning end station may be employ magnetic, electrostatic, or mechanical scanning. This invention has particular relevance for the controlled doping of semiconducting materials and flat panel displays units in which doping may be needed for the production of micro-electronic devices, the sub-circuit crystal damage that is useful for gettering unwanted impurity atoms and for the development of etch pits in flat panel displays. The disclosed apparatus makes possible a variety of chained implants at different energies using the same mask.

Abstract: Method and apparatus for obtaining absolute spatial intensity distribution of a beam of particles in ion implanters. The invention is particularly applicable to ion implanters in which device wafers are mounted on the face of a disk which is rotated, and may be translated, in front of an implanting beam. A spiral pattern of appropriately shaped holes is formed in a spinning disk that holds the wafers. The fluence density of the beam passing through each hole is a precise measure of the fluence density of the particles striking the device wafer at the radial position of the hole. Thus, a measure of the absolute number of particles, and the spatial distribution of those particles is obtained. The invention is useful for beam diagnostics, for quality control of the implantation and for the control over variable intensity implanted ions.