Abstract: An apparatus includes a chassis housing a control server compartment, a compute server compartment, and an input and output (IO) subsystem compartment. The apparatus further includes an IO subsystem inserted into the IO subsystem compartment, a compute server inserted into the compute server compartment, and a control server inserted into the control server compartment coupled to the compute server via an Ethernet connection. The IO subsystem includes one or more IO modules, where at least some of the IO modules can be coupled to sensors. The compute server receives the sensor data from the IO subsystem via some PCIe links and generates planning and control data based on the sensor data for controlling the autonomous vehicle. The control server controls and operates the autonomous vehicle by sending control commands to hardware of the autonomous vehicle based on the planning and control data received from the compute server.

Abstract: An apparatus includes a chassis housing a control server compartment, a compute server compartment, and an input and output (IO) subsystem compartment. The apparatus further includes an IO subsystem inserted into the IO subsystem compartment, a compute server inserted into the compute server compartment, and a control server inserted into the control server compartment coupled to the compute server via an Ethernet connection. The IO subsystem includes one or more IO modules, where at least some of the IO modules can be coupled to sensors. The compute server receives the sensor data from the IO subsystem via some PCIe links and generates planning and control data based on the sensor data for controlling the autonomous vehicle. The control server controls and operates the autonomous vehicle by sending control commands to hardware of the autonomous vehicle based on the planning and control data received from the compute server.

Abstract: Improved methods for stripping photoresist and removing ion implant related residues from a work piece surface are provided. According to various embodiments, plasma is generated using elemental hydrogen, a fluorine-containing gas and a protectant gas. The plasma-activated gases reacts with the high-dose implant resist, removing both the crust and bulk resist layers, while simultaneously protecting exposed portions of the work piece surface. The work piece surface is substantially residue free with low silicon loss.

Abstract: Improved methods and apparatus for stripping photoresist and removing ion implant related residues from a work piece surface are provided. According to various embodiments, the workpiece is exposed to a passivation plasma, allowed to cool for a period of time, and then exposed to an oxygen-based or hydrogen-based plasma to remove the photoresist and ion implant related residues. Aspects of the invention include reducing silicon loss, leaving little or no residue while maintaining an acceptable strip rate. In certain embodiments, methods and apparatus remove photoresist material after high-dose ion implantation processes.

Abstract: Improved methods and apparatus for stripping photoresist and removing ion implant related residues from a work piece surface are provided. According to various embodiments, the workpiece is exposed to a passivation plasma, allowed to cool for a period of time, and then exposed to an oxygen-based or hydrogen-based plasma to remove the photoresist and ion implant related residues. Aspects of the invention include reducing silicon loss, leaving little or no residue while maintaining an acceptable strip rate. In certain embodiments, methods and apparatus remove photoresist material after high-dose ion implantation processes.

Abstract: Improved methods for stripping photoresist and removing ion implant related residues from a work piece surface are provided. According to various embodiments, plasma is generated using elemental hydrogen, a fluorine-containing gas and a protectant gas. The plasma-activated gases reacts with the high-dose implant resist, removing both the crust and bulk resist layers, while simultaneously protecting exposed portions of the work piece surface. The work piece surface is substantially residue free with low silicon loss.