Abstract: The present invention is an apparatus and method for manufacturing a window into a polishing pad used during a planarization process of a front surface of a wafer. A hole is created in the polishing pad at a location where a window is desired. A first release film may be pressed against the working surface of the polishing pad thereby covering one end of the hole. Window material of suitable mechanical, chemical and optical properties is cast in the hole. A second release film may also be pressed against the bottom surface of the polishing pad covering the other end of the hole. The window material is preferably cured with light to quickly form and bond the window into the hole. The release films may be removed leaving the cast window in the polishing pad.

Abstract: A rotary union is provided for chemical/mechanical polishing of silicon wafers, especially silicon wafers containing chemically sensitive integrated circuit structures. A rotary union is provided with a union rotor and union stator, coupled at the free end of a support spindle carrying a CMP polishing table. In the preferred embodiment the rotary union is joined to a coolant union forming the lower end of the support spindle. A passageway through the union rotor extends past the bottom end of the coolant union rotating part to avoid contact of fluid transmitted through the passageway formed in the union rotor, with the rotating part of the coolant union.

Abstract: The present invention provides a labyrinth seal for use with a workpiece planarization apparatus, such as a chemical mechanical planarization apparatus. In accordance with one aspect of the invention, there is provided a labyrinth seal comprising a member having at least one sloped feature which is configured to inhibit a fluid from traveling into and through the labyrinth.

Abstract: The present invention provides a labyrinth seal for use with a workpiece planarization apparatus, such as a chemical mechanical planarization apparatus. In accordance with one aspect of the invention, there is provided a labyrinth seal comprising a member having at least one sloped feature which is configured to inhibit a fluid from traveling into and through the labyrinth.

Abstract: A rotary union is provided for chemical mechanical polishing of silicon wafers, especially silicon wafers containing chemically sensitive integrated circuit structures. A rotary union is provided with a union rotor and union stator, coupled at the free end of a support spindle carrying a CMP polishing table. In the preferred embodiment the rotary union is joined to a coolant union forming the lower end of the support spindle. A passageway through the union rotor extends past the bottom end of the coolant union rotating part to avoid contact of fluid transmitted through the passageway formed in the union rotor, with the rotating part of the coolant union.

Abstract: The present invention provides methods and apparatus which permit the in-process, in-situ, substantially real time measurement of the actual thickness of a surface layer of a workpiece, e.g., a semiconductor wafer. A probe is disposed proximate the outer perimeter of a polishing pad on a CMP table such that the probe establishes optical contact with the wafer surface as a portion of the wafer extends beyond the outer perimeter of the polishing pad. A reflected signal received by the probe is analyzed to calculate the thickness of the surface layer. Alternatively, the reflective characteristics of the semiconductor layers may affect the nature of the reflected signal; changes in the reflected signal can be detected to indicate when a metallic layer has been removed from an oxide layer.

Abstract: The present invention provides methods and apparatus which permit the in-process, in-situ, substantially real time measurement of the actual thickness of a surface layer of a workpiece, e.g., a semiconductor wafer. A probe is disposed proximate the outer perimeter of a polishing pad on a CMP table such that the probe establishes optical contact with the wafer surface as a portion of the wafer extends beyond the outer perimeter of the polishing pad. A reflected signal received by the probe is analyzed to calculate the thickness of the surface layer. Alternatively, the reflective characteristics of the semiconductor layers may affect the nature of the reflected signal; changes in the reflected signal can be detected to indicate when a metallic layer has been removed from an oxide layer.