Patents by Inventor Andrew Youngkyu Kim

Andrew Youngkyu Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • III-Nitride light emitting devices with low driving voltage
    Patent number: 6630692
    Abstract: III-Nitride light emitting diodes having improved performance are provided. In one embodiment, a light emitting device includes a substrate, a nucleation layer disposed on the substrate, a defect reduction structure disposed above the nucleation layer, and an n-type III-Nitride semiconductor layer disposed above the defect reduction structure. The n-type layer has, for example, a thickness greater than about one micron and a silicon dopant concentration greater than or equal to about 1019 cm−3. In another embodiment, a light emitting device includes a III-Nitride semiconductor active region that includes at least one barrier layer either uniformly doped with an impurity or doped with an impurity having a concentration graded in a direction substantially perpendicular to the active region.
    Type: Grant
    Filed: May 29, 2001
    Date of Patent: October 7, 2003
    Assignee: Lumileds Lighting U.S., LLC
    Inventors: Werner Goetz, Nathan Fredrick Gardner, Richard Scott Kern, Andrew Youngkyu Kim, Anneli Munkholm, Stephen A. Stockman, Christopher P. Kocot, Richard P. Schneider, Jr.
  • III-Nitride light emitting devices with low driving voltage
    Publication number: 20020190259
    Abstract: III-Nitride light emitting diodes having improved performance are provided. In one embodiment, a light emitting device includes a substrate, a nucleation layer disposed on the substrate, a defect reduction structure disposed above the nucleation layer, and an n-type III-Nitride semiconductor layer disposed above the defect reduction structure. The n-type layer has, for example, a thickness greater than about one micron and a silicon dopant concentration greater than or equal to about 1019 cm−3. In another embodiment, a light emitting device includes a III-Nitride semiconductor active region that includes at least one barrier layer either uniformly doped with an impurity or doped with an impurity having a concentration graded in a direction substantially perpendicular to the active region.
    Type: Application
    Filed: May 29, 2001
    Publication date: December 19, 2002
    Inventors: Werner Goetz, Nathan Fredrick Gardner, Richard Scott Kern, Andrew Youngkyu Kim, Anneli Munkholm, Stephen A. Stockman, Christopher P. Kocot, Richard P. Schneider