Patents by Inventor Andrey A. Voevodin

Andrey A. Voevodin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200090933
    Abstract: Methods of making molybdenum sulfide (MoS2) on a stretchable substrate are disclosed. The method includes magnetron sputtering MoS2 onto a stretchable substrate, such as a stretchable polymeric material, at low temperatures to form a film precursor, and illumination annealing the film precursor to form high quality MoS2. The illumination source may be a laser or other source of radiation. Also, two-dimensional nanoelectronic devices made by the methods and/or from the high quality MoS2 are disclosed.
    Type: Application
    Filed: July 31, 2019
    Publication date: March 19, 2020
    Applicant: University of Dayton
    Inventors: Christopher Muratore, Michael E. McConney, Travis E. Shelton, Nicholas R. Glavin, John E. Bultman, Andrey A. Voevodin
  • Patent number: 10418237
    Abstract: A nanoelectronics structure is disclosed which includes a substrate layer which has least a first surface and also has a thickness of less than 100 nm. The nanoelectronics structure also includes a dielectric layer, which is deposited on the first surface of the substrate layer and has a thickness of less than 100 nm. This dielectric layer is made up of at least 90 mole percent amorphous boron nitride. Also disclosed is a method for forming a dielectric layer on a substrate using pulsed laser deposition.
    Type: Grant
    Filed: November 22, 2017
    Date of Patent: September 17, 2019
    Assignee: United States of America as represented by the Secretary of the Air Force
    Inventors: Nicholas Glavin, Chris Muratore, Timothy Fisher, Andrey Voevodin
  • Publication number: 20180308692
    Abstract: Methods of making molybdenum sulfide (MoS2) on a stretchable substrate are disclosed. The method includes magnetron sputtering MoS2 onto a stretchable substrate, such as a stretchable polymeric material, at low temperatures to form a film precursor, and illumination annealing the film precursor to form high quality MoS2. The illumination source may be a laser or other source of radiation. Also, two-dimensional nanoelectronic devices made by the methods and/or from the high quality MoS2 are disclosed.
    Type: Application
    Filed: April 25, 2018
    Publication date: October 25, 2018
    Applicant: University of Dayton
    Inventors: Christopher Muratore, Michael E. McConney, Travis E. Shelton, Nicholas R. Glavin, John E. Bultman, Andrey A. Voevodin
  • Publication number: 20180144930
    Abstract: A nanoelectronics structure is disclosed which includes a substrate layer which has least a first surface and also has a thickness of less than 100 nm. The nanoelectronics structure also includes a dielectric layer, which is deposited on the first surface of the substrate layer and has a thickness of less than 100 nm. This dielectric layer is made up of at least 90 mole percent amorphous boron nitride. Also disclosed is a method for forming a dielectric layer on a substrate using pulsed laser deposition.
    Type: Application
    Filed: November 22, 2017
    Publication date: May 24, 2018
    Inventors: Nicholas Glavin, Chris Muratore, Timothy Fisher, Andrey Voevodin
  • Publication number: 20150345010
    Abstract: Methods for magnetically enhanced physical vapor deposition are disclosed. The methods include providing a magnetically enhanced vapor deposition device defining a vapor deposition chamber, having a magnetic field source proximate a magnetron target that is positioned within the vapor deposition chamber and coupled to a power source, and having a substrate holder positioned within the vapor deposition chamber, placing a substrate in the substrate holder, activating the magnetic field source to provide a magnetic field that controls a charged particle flux within the physical vapor deposition chamber, and activating the power source thereby depositing a few-layer film of the material comprising the magnetron target onto the substrate. The few-layer film may be a transition metal dichalcogenide, such as MoS2.
    Type: Application
    Filed: September 30, 2014
    Publication date: December 3, 2015
    Applicants: University of Dayton, Government of the United States, as Represented by the Secretary of the Air Force
    Inventors: Christopher Muratore, John Bultman, Andrey A. Voevodin, Jianjun Hu
  • Patent number: 7768366
    Abstract: A life and electrical properties enhanced microelectromechanical systems (MEMS) switch apparatus in which a combined nanoparticle and ionic fluid lubricant is used to prolong switch elements operating lifetime and desirable electrical characteristics during this lifetime. Nanoparticle materials such as noble metal particles are combined with ionic corona producing liquid organic materials to achieve a desirable contact lubricant material serving to delay the onset of several disclosed classic contact failure mechanisms. Improvement over other contact lubricant materials and favorable contact testing results are included.
    Type: Grant
    Filed: October 29, 2007
    Date of Patent: August 3, 2010
    Assignee: The United States of America as represented by the Secretary of the Air Force
    Inventors: Steven T. Patton, Jeffrey H. Sanders, Andrey A. Voevodin, Mark Pender, Richard A. Vaia, Robert I. MacCuspie, Steve J. Diamanti
  • Patent number: 7381311
    Abstract: A filtered cathodic-arc plasma source of lower plasma losses and higher output plasma current to input current efficiency is disclosed. Plasma filtering is accomplished in a right angle bend magnetic filter arranged to include the effects of at least three added magnetic coils located at the right angle bend of the filter path. These magnetic coils and other filter attributes, including an array of transverse fins and a magnetic cusp trap in the filter path, achieve desirable magnetic flux paths, lower plasma collision losses and reduced undesired particle output from the plasma filter. Multiple cathode sources, multiple plasma output ports, Larmour radius influence, equipotential magnetic flux lines and electron/ion interaction considerations are also included in the plasma source. Application of the plasma source to film coating processes is included.
    Type: Grant
    Filed: October 21, 2003
    Date of Patent: June 3, 2008
    Assignee: The United States of America as represented by the Secretary of the Air Force
    Inventors: Ivan I. Aksenov, Volodymyr E. Strelnytskiy, Volodymyr V. Vasylyev, Andrey A. Voevodin, John G. Jones, Jeffrey S. Zabinski
  • Publication number: 20070187229
    Abstract: A filtered cathodic-arc plasma source of lower plasma losses and higher output plasma current to input current efficiency is disclosed. Plasma filtering is accomplished in a right angle bend magnetic filter arranged to include the effects of at least three added magnetic coils located at the right angle bend of the filter path. These magnetic coils and other filter attributes, including an array of transverse fins and a magnetic cusp trap in the filter path, achieve desirable magnetic flux paths, lower plasma collision losses and reduced undesired particle output from the plasma filter. Multiple cathode sources, multiple plasma output ports, Larmour radius influence, equipotential magnetic flux lines and electron/ion interaction considerations are also included in the plasma source. Application of the plasma source to film coating processes is included.
    Type: Application
    Filed: October 21, 2003
    Publication date: August 16, 2007
    Inventors: Ivan Aksenov, Volodymyr Strelnytskiy, Volodymyr Vasylyev, Andrey Voevodin, John Jones, Jeffrey Zabinski
  • Patent number: 6509070
    Abstract: Formation of for example yttria stabilized zirconia films of significant 001 orientation on a variety of substrates including amorphous material and room temperature limited material is disclosed. The yttria stabilized zirconia film formation is achieved using pulsed laser ablation of a polycrystalline yttria stabilized zirconia target source while the substrate is electrically biased, disposed at a selected angle and maintained at substantially room temperature in the presence of an argon atmosphere. The film formation uses low bias voltage, requires no ion beam apparatus and employs low temperatures sufficient only to enable process stabilization. Film formation is accomplished in a step sequence wherein each step responds to temporal and spatial component segregations occurring in a laser-ablated ion plume.
    Type: Grant
    Filed: May 29, 2001
    Date of Patent: January 21, 2003
    Assignee: The United States of America as represented by the Secretary of the Air Force
    Inventors: Andrey A. Voevodin, John G. Jones, Jeffrey S. Zabinski
  • Patent number: 5989397
    Abstract: Process control for generating graded multilayer films repetitively and consistently using both pulsed laser sputtering and magnetron sputtering deposition techniques. The invention includes an apparatus which allows for set up of an ultrahigh vacuum in a vacuum chamber automatically, and then execution of a computer algorithm or "recipe" to generate desired films. Software operates and controls the apparatus and executes commands which control digital and analog signals which control instruments.
    Type: Grant
    Filed: October 30, 1997
    Date of Patent: November 23, 1999
    Assignee: The United States of America as represented by the Secretary of the Air Force
    Inventors: Samuel J. P. Laube, Andrey A. Voevodin, Jeffrey S. Zabinski, Steven R. LeClair
  • Patent number: H1933
    Abstract: System and method for high vacuum sputtering combining magnetron sputtering and pulsed laser plasma deposition are described wherein simultaneous or sequential magnetron sputtering and pulsed laser deposition operations in a single ultra-high vacuum system provides high deposition rates with precise control of film morphology, stoichiometry, microstructure, composition gradient, and uniformity, in the deposition of high performance coatings of various metal, ceramic and diamond-like carbon materials.
    Type: Grant
    Filed: April 8, 1996
    Date of Patent: January 2, 2001
    Assignee: The United States of America as represented by the Secretary of the Air Force
    Inventors: Jeffrey S. Zabinski, Andrey A. Voevodin, Michael S. Donley
  • Patent number: H1924
    Abstract: Nanocrystalline carbide/diamond-like carbon composite films and synthesis method near room temperature are described wherein combined magnetron sputtering and pulsed laser ablation produce plasma fluxes intersecting on a substrate surface to form metal carbide and diamond-like carbon composite films of about 10 to 50 nm carbide crystallites encapsulated in a sp.sup.3 bonded amorphous diamond-like carbon matrix having a hardness of about 32 GPa and high plasticity, high toughness in contact loading and low friction coefficient.
    Type: Grant
    Filed: July 21, 1999
    Date of Patent: December 5, 2000
    Assignee: The United States of America as represented by the Secretary of the Air Force
    Inventors: Jeffrey S. Zabinski, Andrey A. Voevodin, Somuri V. Prasad