Patents by Inventor Andrey Gennadievich Alexenko

Andrey Gennadievich Alexenko has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Tunnel effect nanodetector of mechanical vibrations and method for preparation thereof
    Patent number: 6829941
    Abstract: A tunnel effect nanodetector. A gold plated sensor pin is single crystal silicon. A gold plated sensor membrane is polycrystalline silicon over a pin. Through holes are in the membrane and gold. Corrugations are along membrane boundaries. The nanodetector includes a unit for maintenance of gap between the pin and membrane. The unit includes a deflection electrode and tunnel current limiter. Gold on the membrane is connected to an input voltage. Gold on the pin is connected to a tunnel current amplifier and tunnel current limiter, the output of which is connected to the deflection electrode. The capacitance measuring unit is connected to the deflection electrode and gold on the membrane. The tunnel current amplifier and capacitance measuring unit are connected to an A/D converter. The sensor, gap maintenance unit, tunnel current amplifier, capacitance measuring unit and A/D converter are a monolithic integrated circuit. The nanodetector electronics are polycrystalline silicon.
    Type: Grant
    Filed: October 10, 2002
    Date of Patent: December 14, 2004
    Inventors: Andrey Gennadievich Alexenko, Mikhail Arsenovich Ananyan, Valery Leonidovich Dshkhunyan, Vyacheslav Fedorovich Kolomeitzev, Petr Nikolaevich Luskinovich, Alexandr Borisovich Nevsky, Oleg Alekseevich Orlov
  • Tunnel effect nanodetector of mechanical vibrations and method for preparation thereof
    Publication number: 20040069063
    Abstract: A tunnel effect nanodetector. A gold plated sensor pin is single crystal silicon. A gold plated sensor membrane is polycrystalline silicon over a pin. Through holes are in the membrane and gold. Corrugations are along membrane boundaries. The nanodetector includes a unit for maintenance of gap between the pin and membrane. The unit includes a deflection electrode and tunnel current limiter. Gold on the membrane is connected to an input voltage. Gold on the pin is connected to a tunnel current amplifier and tunnel current limiter, the output of which is connected to the deflection electrode. The capacitance measuring unit is connected to the deflection electrode and gold on the membrane. The tunnel current amplifier and capacitance measuring unit are connected to an A/D converter. The sensor, gap maintenance unit, tunnel current amplifier, capacitance measuring unit and A/D converter are a monolithic integrated circuit. The nanodetector electronics are polycrystalline silicon.
    Type: Application
    Filed: October 10, 2002
    Publication date: April 15, 2004
    Inventors: Andrey Gennadievich Alexenko, Mikhail Arsenovich Ananyan, Valery Leonidovich Dshkhunyan, Vyacheslav Fedorovich Kolomeitzev, Petr Nikolaevich Luskinovich, Alexandr Borisovich Nevsky, Oleg Alekseevich Orlov