Abstract: A semiconductor device of SiC is adapted to hold high voltages in the blocking state thereof. The device comprises two parts (1, 2) each comprising one or more semiconductor layers of SiC and connected in series between two opposite terminals of the device, namely a sub-semiconductor device (1) able to withstand only low voltages in the blocking state thereof and a voltage-limiting part (2) able to withstand high voltages in the blocking state of the device and adapted to protect said sub-semiconductor device by taking a major part of the voltage over the device in the blocking state thereof.

Abstract: A semiconductor device has a first low-doped semiconductor layer of SiC, a second layer placed next thereto and a junction between these layers being adapted to hold a voltage in a blocking state of the device with a substantially thicker depletion layer in the first layer than in the second one. A junction edge termination is obtained by a position beveling of the junction, so that the area of the device decreases away from the second layer at least in the first layer close to the junction within at least a part of the depletion layer in the first layer and away therefrom by a peripheral bevel surface. The first and second layers are formed by a hexagonal SiC crystal having the c-axis oriented substantially perpendicular to the junction.

Abstract: A semiconductor device comprises two adjacent semiconductor layers of different materials forming a heterojunction therebetween. A first layer has a larger gap between the conduction band and the valence band that a second layer at the interface between the layers. The second layer is made of SiC and the first layer is made of one of at least a) AlN and b) an alloy of AlN and other Group 3B-nitride.