Abstract: A magnetic sensor element is disclosed, comprising a magnetic tunnel junction (MTJ) comprising a reference layer, a tunnel barrier layer, a sense layer having a sense magnetization freely orientable in the presence of the external magnetic field. The reference layer has a reference magnetization and comprises a reference SAF structure and an in-plane sensitivity axis. A SOT electrode configured to pass a SOT current adapted to switch the first reference magnetization in two opposed directions along the sensitivity axis by a spin orbit torque interaction. Also disclosed is a sensing device comprising at least one sensing branch including at least one magnetic sensor element and a sensing operation using the sensing device for sensing an external magnetic field. The magnetic sensor element allows for sensing the external magnetic field with low 1/f noise.

Abstract: The present disclosure concerns a magnetic sensor (100) for sensing an external magnetic field, comprising a plurality of magnetoresistive sensor elements (10), each comprising a reference layer (21) having a reference magnetization (210), a sense layer (23) having a sense magnetization (230) comprising a stable vortex configuration, and a tunnel barrier layer (22). In a layer plane (PL) of the layers (21, 22, 23), each magnetoresistive sensor element (10) has a regular polygon shape comprising n vertices and has a lateral size (D) in the layer plane (PL) between 0.2 pm and 5 pm. Each magnetoresistive sensor element (10) has an aspect ratio of its thickness (ty) to its lateral size (D) between 0.005 and 2. Each magnetoresistive sensor element (10) is rotated in the layer plane (PL) by 36072n relative to an adjacent magnetic sensor element (10).

Abstract: The present disclosure concerns a magnetoresistive sensor (MR) element, comprising a reference layer having a reference magnetization; a sense layer having a sense magnetization comprising a vortex configuration stable under the presence of an external magnetic field, the sense magnetization being reversibly movable in a direction out-of-plane relative to the reference magnetization when the external magnetic field varies in a direction out-of-plane; and a tunnel barrier layer between the reference layer and the sense layer. The MR element further comprises a dipolar assisting layer, configured to generate a dipolar stray field oriented substantially out-of-plane, such that the dipolar stray field is added to the out-of-plane external magnetic field, resulting in an effective magnetic field that is larger than and proportional to the external magnetic field. The present disclosure further concerns a magnetic sensor device comprising the MR element.

Abstract: The present disclosure concerns a tunnel magnetoresistance (TMR) element comprising a tunnel barrier layer sandwiched between a reference layer having a pinned reference magnetization and a sense layer having a sense magnetization that is orientable relative to the fixed reference magnetization in the presence of an external magnetic field. The sense magnetization comprises a stable vortex configuration having a vortex core magnetization polarity that is reversed when a vortex core polarity switching field is applied on the TMR element. The TMR element further comprises a shifting layer adjacent to the sense layer, the shifting layer having a shifting magnetization, the shifting layer being configured to induce a stray field on the sense layer and increases the vortex core polarity switching field. The present disclosure further concerns a TMR sensor comprising a plurality of the TMR elements. The TMR element and TMR sensor have improved robustness and field of application.

Abstract: A magnetic sensor element is disclosed, comprising a magnetic tunnel junction (MTJ) comprising a reference layer, a tunnel barrier layer, a sense layer having a sense magnetization freely orientable in the presence of the external magnetic field. The reference layer has a reference magnetization and comprises a reference SAF structure and an in-plane sensitivity axis. A SOT electrode configured to pass a SOT current adapted to switch the first reference magnetization in two opposed directions along the sensitivity axis by a spin orbit torque interaction. Also disclosed is a sensing device comprising at least one sensing branch including at least one magnetic sensor element and a sensing operation using the sensing device for sensing an external magnetic field. The magnetic sensor element allows for sensing the external magnetic field with low 1/f noise.

Abstract: A magnetoresistive element comprising a reference layer, a ferromagnetic sense layer having a free sense magnetization, and a tunnel barrier layer between the reference layer and the sense layer. The sense layer comprises a first sense layer portion in contact with the tunnel barrier layer and a second sense layer portion in contact with the first sense layer portion. The first sense layer portion is configured such that a magnetic coupling between the first and second sense layer portions is between ±10?4 J/m2 and ±10?3 J/m2; and a perpendicular magnetic anisotropy (PMA) originating from the interface between the first sense layer portion and the tunnel barrier layer is between 8×104 A/m and 8×105 A/m, such as to shift positively the TCS of the magnetoresistive element and compensate the negative temperature coefficient of TMR of the magnetoresistive element.

Abstract: A magnetoresistive element has a tunnel barrier layer included between a ferromagnetic reference layer having a fixed reference magnetization and a ferromagnetic sense layer having a free sense magnetization. The sense magnetization has a ferromagnetic material composition and a stable vortex configuration in the absence of an applied magnetic field. The ferromagnetic material composition varies across the thickness of the sense layer from a composition with higher magnetization near the tunnel barrier layer to a composition with lower magnetization away from the tunnel barrier layer, such that the sense magnetization and ferromagnetic exchange strength of the sense layer are higher near the tunnel barrier layer than away from the tunnel barrier layer.

Abstract: A magnetoresistive sensor element including: a reference layer having a pinned reference magnetization; a sense layer having a free sense magnetization comprising a stable vortex configuration reversibly movable in accordance to an external magnetic field to be measured; a tunnel barrier layer between the reference layer and the sense layer; wherein the sense layer includes a first ferromagnetic sense portion in contact with the tunnel barrier layer and a second ferromagnetic sense portion in contact with the first ferromagnetic sense portion; the second ferromagnetic sense portion including a dilution element in a proportion such that a temperature dependence of a magnetic susceptibility of the sense layer substantially compensates a temperature dependence of a tunnel magnetoresistance of the magnetoresistive sensor element. Also, a method for manufacturing the magnetoresistive sensor element.

Abstract: Magnetoresistive element comprising a reference layer having a fixed reference magnetization; a ferromagnetic sense layer having a free sense magnetization having a stable vortex configuration that is orientable relative to the fixed reference magnetization in the presence of an external magnetic field; and a tunnel barrier layer between the reference layer and the sense layer and contacting a first side of the sense layer. The magnetoresistive element further comprises a hard magnetic layer arranged on a second side (212) of the sense layer opposed to the first side, the hard magnetic layer being configured to generate an interfacial magnetic coupling between the hard magnetic layer and the sense layer on the second side, such as to prevent chirality switching of the sense magnetization after the magnetoresistive element has been submitted to a heat treatment and an external magnetic field above vortex expulsion field.

Abstract: Magnetic angular sensor element destined to sense an external magnetic field, including a magnetic tunnel junction containing a ferromagnetic pinned layer having a pinned magnetization, a ferromagnetic sensing layer, and a tunnel magnetoresistance barrier layer; the ferromagnetic sensing layer including a first sensing layer being in direct contact with the barrier layer and having a first sensing magnetization, a second sensing layer having a second sense magnetization, and a metallic spacer between the first sensing layer and the second sensing layer; wherein the metallic spacer is configured to provide an antiferromagnetic coupling between the first sensing magnetization and the second sensing magnetization such that the first sensing magnetization is oriented substantially antiparallel to the second sensing magnetization; the second sensing magnetization being larger than the first sensing magnetization, such that the second sensing magnetization is oriented in accordance with the direction of the externa

Abstract: A magnetoresistive element for a magnetic sensor, the magnetoresistive element including a tunnel barrier layer between a reference layer having a fixed reference magnetization and a sense layer having a free sense magnetization, wherein the sense magnetization includes a stable vortex configuration. The magnetoresistive element further includes a reference pinning layer in contact with the reference layer and pining the reference magnetization by exchange-bias at a first blocking temperature. The magnetoresistive element further includes a sense pinning layer in contact with the sense layer and pining the sense magnetization by exchange-bias at a second blocking temperature lower that the first blocking temperature. Additionally, a method for manufacturing the magnetoresistive element.

Abstract: The present disclosure concerns a magnetoresistive element comprising a reference layer having a reference magnetization oriented out-of-plane; a sense layer having a sense magnetization comprising a vortex configuration stable under the presence of an external magnetic field and reversibly movable in a direction out-of-plane relative to the reference magnetization when the external magnetic field varies in a direction out-of-plane; and a tunnel barrier layer between the reference layer and the sense layer. The sense layer has a thickness smaller than 200 nm. The sense layer comprises a ferromagnetic material configured such that the sense magnetization is between 300 and 1400 emu/cm3 and such that the sense layer has a perpendicular magnetic anisotropy field that is greater than 1 kOe (79.6×103 A/m). The present disclosure further concerns a magnetoresistive sensor comprising a plurality of the magnetoresistive element.

Abstract: A magnetoresistive element for a 2D magnetic sensor, the magnetoresistive element including a tunnel barrier layer included between a reference layer having a reference magnetization and a sense layer having a sense magnetization. The sense layer includes a sense synthetic antiferromagnetic structure including a first sense sublayer in contact with the tunnel barrier layer and separated from a second sense sublayer by a first non-magnetic spacer layer such that the first sense sublayer is antiferromagnetically coupled to the second sense sublayer.

Abstract: Magnetoresistive element comprising a tunnel barrier layer, a ferromagnetic reference layer having a fixed reference magnetization, and a ferromagnetic sense layer having a sense magnetization that can be changed by an external magnetic field (Bext). The reference, tunnel barrier, and sense layers are stacked perpendicular to a layer plane (PL) thereof. At least a portion of the magnetoresistive element comprising the sense layer has a hollow cross-sectional shape in the layer plane (PL), the cross-sectional shape having an outer side with an outer lateral size (Dout) and an inner side defining a width (wd) of the cross-sectional shape. The outer lateral size (Dout) is between 1 ?m and 5 ?m and the width (wd) is between 0.2 ?m and 0.3 ?m. The sense magnetization has a coreless vortex configuration and such that the magnetoresistive element has zero remanence at zero external magnetic field (Bext). The present disclosure further concerns a magnetic switch comprising the magnetoresistive element.

Abstract: A magnetoresistive element comprising a reference layer, a ferromagnetic sense layer having a free sense magnetization, and a tunnel barrier layer between the reference layer and the sense layer. The sense layer comprises a first sense layer portion in contact with the tunnel barrier layer and a second sense layer portion in contact with the first sense layer portion. The first sense layer portion is configured such that a magnetic coupling between the first and second sense layer portions is between ±10?4 J/m2 and ±10?3 J/m2; and a perpendicular magnetic anisotropy (PMA) originating from the interface between the first sense layer portion and the tunnel barrier layer is between 8×104 A/m and 8×105 A/m, such as to shift positively the TCS of the magnetoresistive element and compensate the negative temperature coefficient of TMR of the magnetoresistive element.

Abstract: A magnetic sensor including a plurality of magnetoresistive elements; each magnetoresistive element including a ferromagnetic layer having a magnetization that is orientable at or above a threshold temperature; the magnetic sensor further includes a plasmonic structure destined to be irradiated by electromagnetic radiation and including a spatially periodic plasmonic array of metallic structures. The period of the plasmonic array and the lateral dimension of the metallic structures are adjusted to obtain plasmon resonance of the plasmonic structure for a given wavelength of the electromagnetic radiation. The plasmonic array is arranged in the magnetic sensor such as to heat the first ferromagnetic layer at or above the threshold temperature, from the enhanced absorption of the electromagnetic radiation by plasmon resonance. The present disclosure further concerns a system including the sensor and an emitting device configured to emit electromagnetic radiation.

Abstract: A method to calculate performance of a magnetic element including a reference bilayer including a ferromagnetic reference layer having a reference magnetization and an antiferromagnetic layer pining the reference magnetization by exchange-bias, the antiferromagnetic layer including a metallic polycrystalline material having a grain volume distribution; the method comprising: measuring an exchange-bias field (Hex) of the antiferromagnetic layer as a function of temperature; fitting a grain volume distribution function to the measured exchange-bias fields (Hex) to determine parameters characterizing the volume distribution function; calculating a variation in the direction of the reference magnetization as a function of a direction of an exposure magnetic field (H); and calculating the exchange bias field (Hex) for any value of the in-plane exposure magnetic field (H).

Abstract: A magnetoresistive element has a tunnel barrier layer included between a ferromagnetic reference layer having a fixed reference magnetization and a ferromagnetic sense layer having a free sense magnetization. The sense magnetization has a ferromagnetic material composition and a stable vortex configuration in the absence of an applied magnetic field. The ferromagnetic material composition varies across the thickness of the sense layer from a composition with higher magnetization near the tunnel barrier layer to a composition with lower magnetization away from the tunnel barrier layer, such that the sense magnetization and ferromagnetic exchange strength of the sense layer are higher near the tunnel barrier layer than away from the tunnel barrier layer.

Abstract: An electronic circuit for measuring an angle and an intensity of an external magnetic field, includes: first and second magnetic field sensing units having sensing axes substantially orthogonal to each other; a voltage generator supplying a synchronization signal, a first voltage waveform to the first magnetic field sensing unit and a second voltage waveform to the second magnetic field sensing unit; a signal conditioning unit configured for adding the first and second sensing output signals and outputting a conditioned signal. The first and second voltage waveforms have substantially the same amplitude and frequency and are phase shifted by about 90° with respect to each other. The conditioned signal and the synchronization signal are inputted into a magnetic field angle detection unit configured for measuring a phase shift between the conditioned signal and the synchronization signal and for determining the angle of the external magnetic field from the measured phase shift.

Abstract: Magnetic current sensor, including: a sensor bridge circuit including a first and second half-bridges, each including two series-connected and diagonally opposed tunnel magnetoresistive (TMR) sensor elements, the TMR sensor elements including a reference layer oriented a single predetermined direction and a sense layer having a sense magnetization; a field line configured for passing a field current generating a magnetic field adapted for orienting the sense magnetization of the diagonally opposed TMR sensor elements of the first half-bridge and of the diagonally opposed TMR sensor elements of the second half-bridge in an opposite direction; such that a non-null differential voltage output between the TMR sensor elements of the first half-bridge and the TMR sensor elements of the second half-bridge is measurable when the field current is passed in the field line; the differential voltage output being insensitive to the presence of an external uniform magnetic field.