Abstract: A system and method are suitable for product placement. The system having a user device including a touch-sensitive screen, a camera for capturing video, and a wireless telecommunication module. The mobile device configured present to the user, via the touch-sensitive screen, a live video feed of the view of the camera, receive from the user, input selections to initiate a video search based on the view of the camera, send a video search query to a server that is based on images captured by the camera, receive a response to the video search query from the server and display items appropriate to the view of the camera.

Abstract: The disclosed laser-based method for pipeline installation includes of forming coronal formations on opposite wall ends of each pipe, continuously interengaging the corona formations of adjacent pipelines and welding a joint between the corona formations unto the desired pipeline length is reached. In particular, the disclosure relates to a pipe connection system including recessed wall ends of respective adjacent pipe segments which are enmeshed with each other to form a corona-like joint, and a laser system operative to weld the corona-like joint.

Abstract: A device for generating short-wavelength electromagnetic radiation based on a gas discharge plasma calls for suppressing droplet formation of liquid coating material that is applied to disk electrodes rotated at high rotational frequencies and ensuring a uniform layer thickness. The device has two rotating disk electrodes, each having two lateral surfaces and a circumferential surface, provided with a reservoir with liquid coating material and a wiper for removing excess coating material. The wiper, which has a U-shaped form comprising two legs parallel to the lateral surfaces of the disk electrode and a crosspiece transversely over the circumferential surface, is at least axially movably supported and has impingement elements at the legs so that it is automatically axially adjustable by means of the coating material which is transported on the lateral surfaces and pressed into the gap during the rotation of the disk electrode.

Abstract: A device for generating short-wavelength electromagnetic radiation based on a gas discharge plasma calls for suppressing droplet formation of liquid coating material that is applied to disk electrodes rotated at high rotational frequencies and ensuring a uniform layer thickness. The device has two rotating disk electrodes, each having two lateral surfaces and a circumferential surface, provided with a reservoir with liquid coating material and a wiper for removing excess coating material. The wiper, which has a U-shaped form comprising two legs parallel to the lateral surfaces of the disk electrode and a crosspiece transversely over the circumferential surface, is at least axially movably supported and has impingement elements at the legs so that it is automatically axially adjustable by means of the coating material which is transported on the lateral surfaces and pressed into the gap during the rotation of the disk electrode.

Abstract: An apparatus and method to generate plasma which can be applied to semiconductor processing. The apparatus includes a chamber having a plasma generating space defined therein, a lower electrode positioned within the chamber, an upper electrode facing the lower electrode and disposed within the chamber to constitute a first plasma generating source, a second plasma generating source positioned at a higher location than that of a lower surface of the upper electrode and disposed at an outer circumference of the upper electrode, and a power supply to supply power to the first and second plasma generating sources.

Abstract: A plasma processing apparatus using a capacitive coupled plasma (CCP) source requiring a low pressure range of about 25 mT or less and a method thereof are disclosed. Plasma source power may be applied in a pulse mode to either one of upper and lower electrodes in a chamber, which generates plasma and processes a semiconductor substrate, and plasma maintaining power may be continuously applied to the other of the upper and lower electrodes, such that a stable pulse plasma process may be performed in a low pressure range of about 25 mT or less.

Abstract: A deposition apparatus includes a gas inflow tube, a plasma electrode, a substrate support functioning as an opposite electrode to the plasma electrode and mounting a substrate thereon, a plasma connector terminal connected to the plasma electrode, a first voltage application unit connected to the plasma connector terminal to apply a voltage thereto in a continuous mode, and a second voltage application unit connected to the plasma connector terminal to apply a voltage thereto in a pulse mode. The voltage applied by the first voltage application unit is an RF voltage of about 13.56 MHz, and the voltage applied by the second voltage application unit is a VHF voltage ranged from about 27 MHz to about 100 MHz.

Abstract: A plasma based ion implantation system capable of generating a capacitively coupled plasma having beneficial characteristics for an ion implantation, including the generation of necessary ions and radicals only for an ion implantation process instead of generating an inductively coupled plasma, which generates unnecessary ions and excessively dissociates radicals. The plasma based ion implantation system easily controls plasma ions implanted by cleaning a vacuum chamber, minimizes problems of unnecessary deposition and occurrence of contaminants and increases the number of components used only for the plasma ion implantion by reducing the deposition of polymer layer on a workpiece. The plasma based ion implantation system easily control uniformity of the plasma by using a flat type electrode, thereby easily ensuring uniformity of plasma ions implanted into the workpiece.

Abstract: An apparatus and method to generate plasma which can be applied to semiconductor processing. The apparatus includes a chamber having a plasma generating space defined therein, a lower electrode positioned within the chamber, an upper electrode facing the lower electrode and disposed within the chamber to constitute a first plasma generating source, a second plasma generating source positioned at a higher location than that of a lower surface of the upper electrode and disposed at an outer circumference of the upper electrode, and a power supply to supply power to the first and second plasma generating sources.

Abstract: An ion analysis system to measure ion energy distribution at several points during a process of manufacturing a semiconductor circuit includes at least two ion flux sensors combined in a single system to measure an ion energy distribution function, each of the ion flux sensors having cells including an opening of 50 micrometers or less.

Abstract: A high density plasma chemical vapor deposition apparatus includes an upper gas supply nozzle which includes a nozzle body, a gas supply passage formed vertically in the nozzle body, a nozzle cover attached to a lower surface of the horizontal portion of the nozzle body, and a plurality of gas inlets formed through the nozzle cover to uniformly supply the processing gas towards a semiconductor wafer within the processing chamber.