Abstract: Some embodiments include constructions which have platinum-containing structures. In some embodiments, the constructions may have a planarized surface extending across the platinum-containing structures and across metal oxide. In some embodiments, the constructions may have a planarized surface extending across the platinum-containing structures, across a first material retaining the platinum-containing structures, and across metal oxide liners along sidewalls of the platinum-containing structures and directly between the platinum-containing structures and the first material. Some embodiments include methods of forming platinum-containing structures. In some embodiments, first material is formed across electrically conductive structures, and metal oxide is formed across the first material. Openings are formed to extend through the metal oxide and the first material to the electrically conductive structures. Platinum-containing material is formed within the openings and over the metal oxide.

Abstract: Some embodiments include constructions which have platinum-containing structures. In some embodiments, the constructions may have a planarized surface extending across the platinum-containing structures and across metal oxide. In some embodiments, the constructions may have a planarized surface extending across the platinum-containing structures, across a first material retaining the platinum-containing structures, and across metal oxide liners along sidewalls of the platinum-containing structures and directly between the platinum-containing structures and the first material. Some embodiments include methods of forming platinum-containing structures. In some embodiments, first material is formed across electrically conductive structures, and metal oxide is formed across the first material. Openings are formed to extend through the metal oxide and the first material to the electrically conductive structures. Platinum-containing material is formed within the openings and over the metal oxide.

Abstract: Some embodiments include constructions which have platinum-containing structures. In some embodiments, the constructions may have a planarized surface extending across the platinum-containing structures and across metal oxide. In some embodiments, the constructions may have a planarized surface extending across the platinum-containing structures, across a first material retaining the platinum-containing structures, and across metal oxide liners along sidewalls of the platinum-containing structures and directly between the platinum-containing structures and the first material. Some embodiments include methods of forming platinum-containing structures. In some embodiments, first material is formed across electrically conductive structures, and metal oxide is formed across the first material. Openings are formed to extend through the metal oxide and the first material to the electrically conductive structures. Platinum-containing material is formed within the openings and over the metal oxide.

Abstract: A method of forming a planar surface for a semiconductor device structure. The method comprises forming a particle film comprising a plurality of discrete particles on a non-planar surface of a semiconductor device structure. The semiconductor device structure is subjected to at least one chemical-mechanical polishing process after forming the particle film on the non-planar surface of the semiconductor device structure. Methods of forming a semiconductor device structure are also described.

Abstract: Some embodiments include methods of patterning platinum-containing material. An opening may be formed to extend into an oxide. Platinum-containing material may be formed over and directly against an upper surface of the oxide, and within the opening. The platinum-containing material within the opening may be a plug having a lateral periphery. The lateral periphery of the plug may be directly against the oxide. The platinum-containing material may be subjected to polishing to remove the platinum-containing material from over the upper surface of the oxide. The polishing may delaminate the platinum-containing material from the oxide, and may remove the platinum-containing material from over the oxide with an effective selectivity for the platinum-containing material relative to the oxide of at least about 5:1. Some embodiments include methods of forming memory cells. Some embodiments include integrated circuitry having platinum-containing material within an opening in an oxide and directly against the oxide.

Abstract: A method of forming a planar surface for a semiconductor device structure. The method comprises forming a particle film comprising a plurality of discrete particles on a non-planar surface of a semiconductor device structure. The semiconductor device structure is subjected to at least one chemical-mechanical polishing process after forming the particle film on the non-planar surface of the semiconductor device structure. Methods of forming a semiconductor device structure are also described.

Abstract: Some embodiments include methods of patterning platinum-containing material. An opening may be formed to extend into an oxide. Platinum-containing material may be formed over and directly against an upper surface of the oxide, and within the opening. The platinum-containing material within the opening may be a plug having a lateral periphery. The lateral periphery of the plug may be directly against the oxide. The platinum-containing material may be subjected to polishing to remove the platinum-containing material from over the upper surface of the oxide. The polishing may delaminate the platinum-containing material from the oxide, and may remove the platinum-containing material from over the oxide with an effective selectivity for the platinum-containing material relative to the oxide of at least about 5:1. Some embodiments include methods of forming memory cells. Some embodiments include integrated circuitry having platinum-containing material within an opening in an oxide and directly against the oxide.

Abstract: Some embodiments include constructions which have platinum-containing structures. In some embodiments, the constructions may have a planarized surface extending across the platinum-containing structures and across metal oxide. In some embodiments, the constructions may have a planarized surface extending across the platinum-containing structures, across a first material retaining the platinum-containing structures, and across metal oxide liners along sidewalls of the platinum-containing structures and directly between the platinum-containing structures and the first material. Some embodiments include methods of forming platinum-containing structures. In some embodiments, first material is formed across electrically conductive structures, and metal oxide is formed across the first material. Openings are formed to extend through the metal oxide and the first material to the electrically conductive structures. Platinum-containing material is formed within the openings and over the metal oxide.

Abstract: Some embodiments include methods of patterning platinum-containing material. An opening may be formed to extend into an oxide. Platinum-containing material may be formed over and directly against an upper surface of the oxide, and within the opening. The platinum-containing material within the opening may be a plug having a lateral periphery. The lateral periphery of the plug may be directly against the oxide. The platinum-containing material may be subjected to polishing to remove the platinum-containing material from over the upper surface of the oxide. The polishing may delaminate the platinum-containing material from the oxide, and may remove the platinum-containing material from over the oxide with an effective selectivity for the platinum-containing material relative to the oxide of at least about 5:1. Some embodiments include methods of forming memory cells. Some embodiments include integrated circuitry having platinum-containing material within an opening in an oxide and directly against the oxide.

Abstract: Some embodiments include constructions which have platinum-containing structures. In some embodiments, the constructions may have a planarized surface extending across the platinum-containing structures and across metal oxide. In some embodiments, the constructions may have a planarized surface extending across the platinum-containing structures, across a first material retaining the platinum-containing structures, and across metal oxide liners along sidewalls of the platinum-containing structures and directly between the platinum-containing structures and the first material. Some embodiments include methods of forming platinum-containing structures. In some embodiments, first material is formed across electrically conductive structures, and metal oxide is formed across the first material. Openings are formed to extend through the metal oxide and the first material to the electrically conductive structures. Platinum-containing material is formed within the openings and over the metal oxide.

Abstract: A method of processing a substrate having integrated circuitry includes forming through-substrate vias partially through the substrate from a first side of the substrate. At least one through-substrate structure is formed partially through the substrate from the first substrate side. The at least one through-substrate structure extends deeper into the substrate than do the through-substrate vias. Substrate material is removed from a second side of the substrate to expose the through-substrate vias and the at least one through-substrate structure on the second substrate side. Additional implementations are disclosed. Integrated circuit substrates are disclosed independent of method of manufacture.

Abstract: Some embodiments include methods of patterning platinum-containing material. An opening may be formed to extend into an oxide. Platinum-containing material may be formed over and directly against an upper surface of the oxide, and within the opening. The platinum-containing material within the opening may be a plug having a lateral periphery. The lateral periphery of the plug may be directly against the oxide. The platinum-containing material may be subjected to polishing to remove the platinum-containing material from over the upper surface of the oxide. The polishing may delaminate the platinum-containing material from the oxide, and may remove the platinum-containing material from over the oxide with an effective selectivity for the platinum-containing material relative to the oxide of at least about 5:1. Some embodiments include methods of forming memory cells. Some embodiments include integrated circuitry having platinum-containing material within an opening in an oxide and directly against the oxide.

Abstract: Some embodiments include constructions which have platinum-containing structures. In some embodiments, the constructions may have a planarized surface extending across the platinum-containing structures and across metal oxide. In some embodiments, the constructions may have a planarized surface extending across the platinum-containing structures, across a first material retaining the platinum-containing structures, and across metal oxide liners along sidewalls of the platinum-containing structures and directly between the platinum-containing structures and the first material. Some embodiments include methods of forming platinum-containing structures. In some embodiments, first material is formed across electrically conductive structures, and metal oxide is formed across the first material. Openings are formed to extend through the metal oxide and the first material to the electrically conductive structures. Platinum-containing material is formed within the openings and over the metal oxide.

Abstract: Some embodiments include methods of patterning platinum-containing material. An opening may be formed to extend into an oxide. Platinum-containing material may be formed over and directly against an upper surface of the oxide, and within the opening. The platinum-containing material within the opening may be a plug having a lateral periphery. The lateral periphery of the plug may be directly against the oxide. The platinum-containing material may be subjected to polishing to remove the platinum-containing material from over the upper surface of the oxide. The polishing may delaminate the platinum-containing material from the oxide, and may remove the platinum-containing material from over the oxide with an effective selectivity for the platinum-containing material relative to the oxide of at least about 5:1. Some embodiments include methods of forming memory cells. Some embodiments include integrated circuitry having platinum-containing material within an opening in an oxide and directly against the oxide.

Abstract: A method of making a semiconductor structure includes determining a polish time which is sufficient to planarize a layer on a semiconductor substrate. The layer is polished for the polish time to planarize the layer, and then the layer is polished to a predetermined thickness. The semiconductor structures can be used to make a semiconductor device.

Abstract: A dummy structure pattern for fabricating a substantially planar surface within an inactive region of a semiconductor topography is provided. In particular, a semiconductor topography is provided which includes an inactive region comprising a sacrificial annular dummy structure configured to surround an area larger than a square of a minimum critical dimension of a device arranged within an active region of the semiconductor topography. In a preferred embodiment, the area is exclusively designated for a formation of an isolation structure within the semiconductor substrate of the semiconductor topography. As such, a semiconductor topography is provided which includes a separate isolation structure arranged within a spacing of a contiguous isolation structure, which is arranged in a grid pattern within a portion of a semiconductor substrate. Moreover, a semiconductor device is provided which includes an inactive region with a plurality of similarly sized and uniformly arranged annular diffusion regions.