Patents by Inventor Andy Brinkman

Andy Brinkman has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • APPARATUS AND PROCESS FOR CRYSTAL GROWTH
    Publication number: 20160160385
    Abstract: The present invention relates to an apparatus for vapour phase crystal growth to produce multiple single crystals in one growth cycle comprising one central source chamber, a plurality of growth chambers, a plurality of passage means adapted for transport of vapour from the source chamber to the growth chambers, wherein the source chamber is thermally decoupled from the growth chambers.
    Type: Application
    Filed: June 17, 2014
    Publication date: June 9, 2016
    Applicant: KROMEK LIMITED
    Inventors: Arnab Basu, Max Robinson, Ben Cantwell, Andy Brinkman
  • Semiconductor device and method of manufacture thereof
    Patent number: 8968469
    Abstract: A structure including a substrate, an intermediate layer provided and formed directly onto the substrate, a transition region, and a group II-VI bulk crystal material provided and formed as an extension of the transition region. The transition region acts to change the structure from the underlying substrate to that of the bulk crystal. In a method of manufacture, a similar technique can be used for growing the transition region and the bulk crystal layer.
    Type: Grant
    Filed: October 11, 2010
    Date of Patent: March 3, 2015
    Assignee: Kromek Limited
    Inventors: Arnab Basu, Max Robinson, Ben Cantwell, Andy Brinkman
  • Semiconductor device with a bulk single crystal on a substrate
    Patent number: 8093095
    Abstract: Device and method of forming a device in which a substrate (10) is fabricated with at least part of an electronic circuit for processing signals. A bulk single crystal material (14) is formed on the substrate, either directly on the substrate (10) or with an intervening thin film layer or transition region (12). A particular application of the device is for a radiation detector.
    Type: Grant
    Filed: December 21, 2006
    Date of Patent: January 10, 2012
    Assignee: Kromek Limited
    Inventors: Arnab Basu, Max Robinson, Ben Cantwell, Andy Brinkman
  • Semiconductor device with a bulk single crystal on a substrate
    Patent number: 8093671
    Abstract: Device and method of forming a device in which a substrate (10) is fabricated with at least part of an electronic circuit for processing signals. A bulk single crystal material (14) is formed on the substrate, either directly on the substrate (10) or with an intervening thin film layer or transition region (12). A particular application of the device is for a radiation detector.
    Type: Grant
    Filed: September 13, 2010
    Date of Patent: January 10, 2012
    Assignee: Kromek Limited
    Inventors: Arnab Basu, Max Robinson, Benjamin John Cantwell, Andy Brinkman
  • APPARATUS AND PROCESS FOR CRYSTAL GROWTH
    Publication number: 20110073034
    Abstract: The present invention relates to an apparatus for vapour phase crystal growth to produce multiple single crystals in one growth cycle comprising one central source chamber, a plurality of growth chambers, a plurality of passage means adapted for transport of vapour from the source chamber to the growth chambers, wherein the source chamber is thermally decoupled from the growth chambers.
    Type: Application
    Filed: October 14, 2010
    Publication date: March 31, 2011
    Applicant: DURHAM SCIENTIFIC CRYSTALS LIMITED
    Inventors: Arnab Basu, Max Robinson, Ben Cantwell, Andy Brinkman
  • SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE THEREOF
    Publication number: 20110024877
    Abstract: A structure including a substrate, an intermediate layer provided and formed directly onto the substrate, a transition region, and a group II-VI bulk crystal material provided and formed as an extension of the transition region. The transition region acts to change the structure from the underlying substrate to that of the bulk crystal. In a method of manufacture, a similar technique can be used for growing the transition region and the bulk crystal layer.
    Type: Application
    Filed: October 11, 2010
    Publication date: February 3, 2011
    Applicant: DURHAM SCIENTIFIC CRYSTALS LIMITED
    Inventors: Arnab Basu, Max Robinson, Ben Cantwell, Andy Brinkman
  • SEMICONDUCTOR DEVICE WITH A BULK SINGLE CRYSTAL ON A SUBSTRATE
    Publication number: 20100327277
    Abstract: Device and method of forming a device in which a substrate (10) is fabricated with at least part of an electronic circuit for processing signals. A bulk single crystal material (14) is formed on the substrate, either directly on the substrate (10) or with an intervening thin film layer or transition region (12). A particular application of the device is for a radiation detector.
    Type: Application
    Filed: September 13, 2010
    Publication date: December 30, 2010
    Applicant: DURHAM SCIENTIFIC CRYSTALS LIMITED
    Inventors: Arnab Basu, Max Robinson, Benjamin John Cantwell, Andy Brinkman
  • SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE THEREOF
    Publication number: 20090053453
    Abstract: A structure including a substrate, an intermediate layer provided and formed directly onto the substrate, a transition region, and a group II-VI bulk crystal material provided and formed as an extension of the transition region. The transition region acts to change the structure from the underlying substrate to that of the bulk crystal. In a method of manufacture, a similar technique can be used for growing the transition region and the bulk crystal layer.
    Type: Application
    Filed: December 21, 2006
    Publication date: February 26, 2009
    Applicant: DURHAM SCIENTIFIC CRYSTALS LIMITED
    Inventors: Arnab Basu, Max Robinson, Ben Cantwell, Andy Brinkman
  • Semiconductor Device with a Bulk Single Crystal on a Substrate
    Publication number: 20080315342
    Abstract: Device and method of forming a device in which a substrate (10) is fabricated with at least part of an electronic circuit for processing signals. A bulk single crystal material (14) is formed on the substrate, either directly on the substrate (10) or with an intervening thin film layer or transition region (12). A particular application of the device is for a radiation detector.
    Type: Application
    Filed: December 21, 2006
    Publication date: December 25, 2008
    Applicant: DURHAM SCIENTIFIC CRYSTALS LIMITED
    Inventors: Arnab Basu, Max Robinson, Ben Cantwell, Andy Brinkman
  • Apparatus And Process For Crystal Growth
    Publication number: 20080156255
    Abstract: The present invention relates to an apparatus for vapour phase crystal growth to produce multiple single crystals in one growth cycle comprising one central source chamber, a plurality of growth chambers, a plurality of passage means adapted for transport of vapour from the source chamber to the growth chambers, wherein the source chamber is thermally decoupled from the growth chambers.
    Type: Application
    Filed: February 2, 2006
    Publication date: July 3, 2008
    Inventors: Arnab Basu, Max Robinson, Ben Cantwell, Andy Brinkman