Abstract: Disclosed herein are antibodies capable of specifically binding to tenofovir (TFV), a key small molecule drug for both the treatment and prevention of HIV, and a competitive lateral flow assay that uses these antibodies to monitor urine samples for the presence of the drug. The assay can be deployed as a point-of-care device for adherence monitoring.

Abstract: Disclosed herein are antibodies capable of specifically binding to tenofovir (TFV), a key small molecule drug for both the treatment and prevention of HIV, and a competitive lateral flow assay that uses these antibodies to monitor urine samples for the presence of the drug. The assay can be deployed as a point-of-care device for adherence monitoring.

Abstract: A fluid valve with a single shaft-sealing module is disclosed. The single shaft-sealing module allows the annular shaft sealing rings to be squeezed to slightly deform to prevent gaps being formed between the shaft and the inner surface of the valve body, and facilitates easy clean and/or replacement of the worn shaft sealing rings.

Abstract: A fluid valve with a single shaft-sealing module is disclosed. The single shaft-sealing module allows the annular shaft sealing rings to be squeezed to slightly deform to prevent gaps being formed between the shaft and the inner surface of the valve body, and facilitates easy clean and/or replacement of the worn shaft sealing rings.

Abstract: A fluid valve includes a valve body, a shaft and a valve disc. A shaft seal groove and a valve disc groove, which are in communication with each other, are provided in the valve body. The valve disc is disposed in the valve disc groove. A modular shaft sealing structure is provided in the shaft seal groove, and formed by sequentially stacked shaft seal rings, shaft rings and spring. The inner sides of these components are combined to be an accommodating space, in which the shaft is allowed to be accommodated. The modular shaft sealing structure of the present invention may be detachable, and can be integrally replaced, enabling more convenient replacement of components in the shaft sealing structure, so that the loads on the entire shaft sealing structure can be balanced.

Abstract: A fluid valve includes a valve body, a shaft and a valve disc. A shaft seal groove and a valve disc groove, which are in communication with each other, are provided in the valve body. The valve disc is disposed in the valve disc groove. A modular shaft sealing structure is provided in the shaft seal groove, and formed by sequentially stacked shaft seal rings, shaft rings and spring. The inner sides of these components are combined to be an accommodating space, in which the shaft is allowed to be accommodated. The modular shaft sealing structure of the present invention may be detachable, and can be integrally replaced, enabling more convenient replacement of components in the shaft sealing structure, so that the loads on the entire shaft sealing structure can be balanced.

Abstract: The present invention relates to a method for conversion of a target nucleic acid molecule according to a predetermined nucleotide code into a converted nucleic acid molecule. The converted nucleic acid molecule has utility for determining the nucleotide sequence of the target nucleic acid molecule, for example, using a nanopore.

Abstract: A method of forming a multi-layer semiconductor structure includes attaching a handle-member to a top surface of a first structure using a first interface. At least one region of a bottom surface of the first structure is etched to form at least a first via-hole for exposing a portion of a first conductive member defined on the first structure. A conductive material is disposed in the first via-hole such that a first end of the conductive material is in electrical communication with the first conductive member and a second end of the conductive material is exposed at the bottom surface of the first structure. A second interface is disposed over at least the second end of the conductive material, which serves as a bonding and/or electrical interface between the first conductive member defined on the first structure and a second structure of the multi-layer semiconductor device structure.

Abstract: A method of forming a multi-layer semiconductor structure includes attaching a handle-member to a top surface of a first structure using a first interface. At least one region of a bottom surface of the first structure is etched to form at least a first via-hole for exposing a portion of a first conductive member defined on the first structure. A conductive material is disposed in the first via-hole such that a first end of the conductive material is in electrical communication with the first conductive member and a second end of the conductive material is exposed at the bottom surface of the first structure. A second interface is disposed over at least the second end of the conductive material, which serves as a bonding and/or electrical interface between the first conductive member defined on the first structure and a second structure of the multi-layer semiconductor device structure.

Abstract: A method of forming a multi-layer semiconductor structure includes providing a first layer of a patterned copper bond film having a first predetermined thickness onto a first surface of a first semiconductor. The method further includes providing a second layer of a patterned copper bond film having a second predetermined thickness onto a first surface of a second semiconductor. The first and second semiconductor structures can be aligned, such that the first and second patterned copper bond films are disposed in proximity. A virtually seamless bond can be formed between the first and second patterned copper bond films to provide the first and second semiconductors as the multi-layer semiconductor structure.

Abstract: A method of forming a multi-layer semiconductor structure includes providing a first layer of a patterned copper bond film having a first predetermined thickness onto a first surface of a first semiconductor. The method further includes providing a second layer of a patterned copper bond film having a second predetermined thickness onto a first surface of a second semiconductor. The first and second semiconductor structures can be aligned, such that the first and second patterned copper bond films are disposed in proximity. A virtually seam-less bond can be formed between the first and second patterned copper bond films to provide the first and second semiconductors as the multi-layer semiconductor structure.

Abstract: A method of forming a multi-layer semiconductor structure includes attaching a handle-member to a top surface of a first structure using a first interface. At least one region of a bottom surface of the first structure is etched to form at least a first via-hole for exposing a portion of a first conductive member defined on the first structure. A conductive material is disposed in the first via-hole such that a first end of the conductive material is in electrical communication with the first conductive member and a second end of the conductive material is exposed at the bottom surface of the first structure. A second interface is disposed over at least the second end of the conductive material, which serves as a bonding and/or electrical interface between the first conductive member defined on the first structure and a second structure of the multi-layer semiconductor device structure.

Abstract: A multi-layer integrated semiconductor structure including a first device layer having a first plurality of semiconductor elements. A first insulating layer is disposed over the first device layer and includes at least a first via-hole. A first conductive plug is disposed in the first via-hole. An interface portion is disposed over at least the first conductive plug. The multi-layer integrated semiconductor structure further includes a second device layer. The second device layer includes a second plurality of semiconductor elements disposed on a top surface of a substrate, which includes a second via-hole. A second conductive plug is disposed in the second via-hole. The second device layer is aligned and coupled to the first device layer via the interface portion so that the interface portion provides a communication relationship between the first device layer and the second device layer.

Abstract: A method of forming a multi-layer semiconductor structure includes providing a first layer of a patterned copper bond film having a first predetermined thickness onto a first surface of a first semiconductor. The method further includes providing a second layer of a patterned copper bond film having a second predetermined thickness onto a first surface of a second semiconductor. The first and second semiconductor structures can be aligned, such that the first and second patterned copper bond films are disposed in proximity. A virtually seam-less bond can be formed between the first and second patterned copper bond films to provide the first and second semiconductors as the multi-layer semiconductor structure.