Abstract: A vehicle system includes a blocker vehicle, a vision system, and one or more processing circuits. The blocker vehicle includes an alert system. The vision system includes at least one of a camera, a lidar sensor, or a radar sensor. The vision system is configured to acquire vision data regarding an approaching vehicle approaching the blocker vehicle. The one or more processing circuits are configured to evaluate a threat level of the approaching vehicle based on the vision data and transmit an alert signal to at least one of the alert system, the approaching vehicle, or a portable device worn or carried by a person associated with the blocker vehicle in response to the threat level exceeding a threat threshold.

Abstract: Disclosed herein an optical media, a method of making an optical media and a photovoltaic window. The optical media includes a matrix and luminescent phosphors dispersed in the matrix. The luminescent phosphors include at least one of luminescent inorganic phosphors and quantum dot nanocrystals. The optical media may be made into a thin film attached to a window glass. The luminescent phosphors emit excitation light under irradiation of the incident light, which is converted into electrical energy through the photovoltaic cells. The photovoltaic window includes a light-transmitting substrate, an optical media and a first photovoltaic cell. The optical media is attached to the front/rear main surface of the light-transmitting substrate. The first photovoltaic cell is attached to the side surface of the light-transmitting substrate.

Abstract: A semiconductor device includes an interconnect structure embedded in a first metallization layer comprising a dielectric material. The interconnect structure includes a first metal material. The semiconductor device includes a first liner structure embedded in the first metallization layer. The first liner structure is extended along one or more boundaries of the interconnect structure in the first metallization layer. The first liner structure includes a second metal material reacted with one or more dopants, the second metal material being different from the first metal material.

Abstract: A semiconductor device includes an interconnect structure embedded in a first metallization layer comprising a dielectric material. The interconnect structure includes a first metal material. The semiconductor device includes a first liner structure embedded in the first metallization layer. The first liner structure is extended along one or more boundaries of the interconnect structure in the first metallization layer. The first liner structure includes a second metal material reacted with one or more dopants, the second metal material being different from the first metal material.