Patents by Inventor Andy Luan

Andy Luan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • LEAKAGE PATHWAY LAYER FOR SOLAR CELL
    Publication number: 20200212230
    Abstract: Leakage pathway layers for solar cells and methods of forming leakage pathway layers for solar cells are described.
    Type: Application
    Filed: March 11, 2020
    Publication date: July 2, 2020
    Inventors: Andy Luan, David D. Smith, Peter John Cousins, Sheng Sun
  • LEAKAGE PATHWAY LAYER FOR SOLAR CELL
    Publication number: 20160064576
    Abstract: Leakage pathway layers for solar cells and methods of forming leakage pathway layers for solar cells are described.
    Type: Application
    Filed: November 12, 2015
    Publication date: March 3, 2016
    Inventors: Andy Luan, David D. Smith, Peter John Cousins, Sheng Sun
  • Leakage pathway layer for solar cell
    Patent number: 9202960
    Abstract: Leakage pathway layers for solar cells and methods of forming leakage pathway layers for solar cells are described.
    Type: Grant
    Filed: March 30, 2010
    Date of Patent: December 1, 2015
    Assignee: SunPower Corporation
    Inventors: Andy Luan, David Smith, Peter Cousins, Sheng Sun
  • LEAKAGE PATHWAY LAYER FOR SOLAR CELL
    Publication number: 20110240105
    Abstract: Leakage pathway layers for solar cells and methods of forming leakage pathway layers for solar cells are described.
    Type: Application
    Filed: March 30, 2010
    Publication date: October 6, 2011
    Inventors: Andy Luan, David Smith, Peter Cousins, Sheng Sun
  • Liquid precursors for the CVD deposition of amorphous carbon films
    Publication number: 20050287771
    Abstract: Methods are provided for depositing amorphous carbon materials. In one aspect, the invention provides a method for processing a substrate including positioning the substrate in a processing chamber, introducing a processing gas into the processing chamber, wherein the processing gas comprises a carrier gas, hydrogen, and one or more precursor compounds, generating a plasma of the processing gas by applying power from a dual-frequency RF source, and depositing an amorphous carbon layer on the substrate.
    Type: Application
    Filed: February 24, 2005
    Publication date: December 29, 2005
    Inventors: Martin Seamons, Wendy Yeh, Sudha Rathi, Deenesh Padhi, Andy Luan, Sum-Yee Tang, Priya Kulkarni, Visweswaren Sivaramakrishnan, Bok Kim, Hichem M'Saad, Yuxiang Wang, Michael Kwan
  • Method for obtaining high quality InGaAsN semiconductor devices
    Patent number: 6764926
    Abstract: A method for making high quality InGaAsN semiconductor devices is presented. The method allows the making of high quality InGaAsN semiconductor devices using a single MOCVD reactor while avoiding aluminum contamination.
    Type: Grant
    Filed: March 25, 2002
    Date of Patent: July 20, 2004
    Assignee: Agilent Technologies, Inc.
    Inventors: Tetsuya Takeuchi, Ying-Lan Chang, David P. Bour, Michael H. Leary, Michael R. T. Tan, Andy Luan
  • Method for obtaining high quality InGaAsN semiconductor devices
    Publication number: 20030181024
    Abstract: A method for making high quality InGaAsN semiconductor devices is presented. The method allows the making of high quality InGaAsN semiconductor devices using a single MOCVD reactor while avoiding aluminum contamination.
    Type: Application
    Filed: March 25, 2002
    Publication date: September 25, 2003
    Inventors: Tetsuya Takeuchi, Ying-Lan Chang, David P. Bour, Michael H. Leary, Michael R. T. Tan, Andy Luan