Patents by Inventor Andy Ray
Andy Ray has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11925572Abstract: A foot orthotic having a foot support where the foot support includes a thermoplastic outer shell, a closed cell foam liner within the outer shell, and a tongue to secure the user's foot within the foot support. The orthotic also typically has includes a lower leg support that includes a thermoplastic outer shell, a closed cell foam liner within the outer shell, and a strap to secure the orthotic to the user's leg within the lower leg support. A cinching mechanism that typically has a rotatable tightening knob is on the lower leg support, and a tightening cable coupled to the rotatable tightening knob and operably connected to the foot support.Type: GrantFiled: January 8, 2021Date of Patent: March 12, 2024Assignee: DOXA MEDICAL, LLCInventors: Matthew John Prihoda, John Ray Mitchell, Andy Michael Smith, Marcus William Powell, Shawn Edward Twyman
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Patent number: 11646175Abstract: An ion implantation has an ion source and a mass analyzer configured to form and mass analyze an ion beam. A bending element is positioned downstream of the mass analyzer, and respective first and second measurement apparatuses are positioned downstream and upstream of the bending element and configured to determine a respective first and second ion beam current of the ion beam. A workpiece scanning apparatus scans the workpiece through the ion beam. A controller is configured to determine an implant current of the ion beam at the workpiece and to control the workpiece scanning apparatus to control a scan velocity of the workpiece based on the implant current. The determination of the implant current of the ion beam is based, at least in part, on the first ion beam current and second ion beam current.Type: GrantFiled: February 14, 2020Date of Patent: May 9, 2023Assignee: Axcelis Technologies, Inc.Inventors: James DeLuca, Andy Ray, Neil Demario, Rosario Mollica
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Publication number: 20200266032Abstract: An ion implantation has an ion source and a mass analyzer configured to form and mass analyze an ion beam. A bending element is positioned downstream of the mass analyzer, and respective first and second measurement apparatuses are positioned downstream and upstream of the bending element and configured to determine a respective first and second ion beam current of the ion beam. A workpiece scanning apparatus scans the workpiece through the ion beam. A controller is configured to determine an implant current of the ion beam at the workpiece and to control the workpiece scanning apparatus to control a scan velocity of the workpiece based on the implant current. The determination of the implant current of the ion beam is based, at least in part, on the first ion beam current and second ion beam current.Type: ApplicationFiled: February 14, 2020Publication date: August 20, 2020Inventors: James DeLuca, Andy Ray, Neil Demario, Rosario Mollica
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Patent number: 9490185Abstract: An ion implantation system is provided having an ion implantation apparatus configured to provide a spot ion beam having a beam density to a workpiece, wherein the workpiece has a crystalline structure associated therewith. A scanning system iteratively scans one or more of the spot ion beam and workpiece with respect to one another along one or more axes. A controller is also provided and configured to establish a predetermined localized temperature of the workpiece as a predetermined location on the workpiece is exposed to the spot ion beam. A predetermined localized disorder of the crystalline structure of the workpiece is thereby achieved at the predetermined location, wherein the controller is configured to control one or more of the beam density of the spot ion beam and a duty cycle associated with the scanning system to establish the localized temperature of the workpiece at the predetermined location on the workpiece.Type: GrantFiled: August 29, 2013Date of Patent: November 8, 2016Assignee: AXCELIS TECHNOLOGIES, INC.Inventors: Ronald N. Reece, Shu Satoh, Serguei Kondratenko, Andy Ray
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Patent number: 9147554Abstract: An ion implantation system includes a beamline configured to direct an ion beam toward an end station configured to hold or support a workpiece, and a scanning system. The scanning system is configured to scan the end station past the ion beam in a two-dimensional fashion comprising a first scan axis along a first direction and a second scan axis along a second direction that is different than the first direction. The system further includes a supplemental scanning component operably associated with the scanning system, and configured to effectuate a scanning of the ion beam with respect to the end station along a third scan axis having a third direction that is different than the first direction.Type: GrantFiled: June 29, 2010Date of Patent: September 29, 2015Assignee: Axcelis Technologies, Inc.Inventor: Andy Ray
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Publication number: 20140065730Abstract: An ion implantation system is provided having an ion implantation apparatus configured to provide a spot ion beam having a beam density to a workpiece, wherein the workpiece has a crystalline structure associated therewith. A scanning system iteratively scans one or more of the spot ion beam and workpiece with respect to one another along one or more axes. A controller is also provided and configured to establish a predetermined localized temperature of the workpiece as a predetermined location on the workpiece is exposed to the spot ion beam. A predetermined localized disorder of the crystalline structure of the workpiece is thereby achieved at the predetermined location, wherein the controller is configured to control one or more of the beam density of the spot ion beam and a duty cycle associated with the scanning system to establish the localized temperature of the workpiece at the predetermined location on the workpiece.Type: ApplicationFiled: August 29, 2013Publication date: March 6, 2014Applicant: Axcelis Technologies, Inc.Inventors: Ronald N. Reece, Shu Satoh, Serguei Kondratenko, Andy Ray
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Patent number: 8502173Abstract: A method comprising introducing an injected gas (e.g., Argon, Xenon) into a beam line region comprising a magnetic scanner is provided herein. The injected gas improves beam current by enhancing (e.g., increasing, decreasing) charge neutralization of the magnetic ion beam (e.g., the ion beam at regions where the scanning magnetic field is non-zero) thereby reducing the current loss due to the zero field effect (ZFE). By reducing the current loss in regions having a magnetic field, the magnetic beam current is increased (e.g., the beam current is increased in regions where the magnetic field is non-zero) raising the overall beam current in a uniform manner over an entire scan path and thereby reducing the effect of the ZFE. In other words, the ZFE is removed by effectively minimizing it through an increase in the magnetized beam current.Type: GrantFiled: September 24, 2012Date of Patent: August 6, 2013Assignee: Axcelis Technologies Inc.Inventors: Bo H. Vanderberg, Steven C. Hays, Andy Ray
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Patent number: 8378313Abstract: One embodiment relates to an ion implanter. The ion implanter includes an ion source to generate an ion beam, as well as a scanner to scan the ion beam across a surface of a workpiece along a first axis. The ion implanter also includes a deflection filter downstream of the scanner to ditheredly scan the ion beam across the surface of the workpiece along a second axis.Type: GrantFiled: March 31, 2011Date of Patent: February 19, 2013Assignee: Axcelis Technologies, Inc.Inventors: Edward C. Eisner, Andy Ray, Bo H. Vanderberg
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Publication number: 20120248326Abstract: One embodiment relates to an ion implanter. The ion implanter includes an ion source to generate an ion beam, as well as a scanner to scan the ion beam across a surface of a workpiece along a first axis. The ion implanter also includes a deflection filter downstream of the scanner to ditheredly scan the ion beam across the surface of the workpiece along a second axis.Type: ApplicationFiled: March 31, 2011Publication date: October 4, 2012Applicant: Axcelis Technologies, Inc.Inventors: Edward C. Eisner, Andy Ray, Bo H. Vanderberg
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Patent number: 8278634Abstract: A method comprising introducing an injected gas (e.g., Argon, Xenon) into a beam line region comprising a magnetic scanner is provided herein. The injected gas improves beam current by enhancing (e.g., increasing, decreasing) charge neutralization of the magnetic ion beam (e.g., the ion beam at regions where the scanning magnetic field is non-zero) thereby reducing the current loss due to the zero field effect (ZFE). By reducing the current loss in regions having a magnetic field, the magnetic beam current is increased (e.g., the beam current is increased in regions where the magnetic field is non-zero) raising the overall beam current in a uniform manner over an entire scan path and thereby reducing the effect of the ZFE. In other words, the ZFE is removed by effectively minimizing it through an increase in the magnetized beam current.Type: GrantFiled: June 8, 2010Date of Patent: October 2, 2012Assignee: Axcelis Technologies, Inc.Inventors: Bo H. Vanderberg, Steven C. Hays, Andy Ray
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Publication number: 20110001059Abstract: An ion implantation system includes a beamline configured to direct an ion beam toward an end station configured to hold or support a workpiece, and a scanning system. The scanning system is configured to scan the end station past the ion beam in a two-dimensional fashion comprising a first scan axis along a first direction and a second scan axis along a second direction that is different than the first direction. The system further includes a supplemental scanning component operably associated with the scanning system, and configured to effectuate a scanning of the ion beam with respect to the end station along a third scan axis having a third direction that is different than the first direction.Type: ApplicationFiled: June 29, 2010Publication date: January 6, 2011Applicant: Axcelis Technologies, Inc.Inventor: Andy Ray
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Publication number: 20100308215Abstract: A method comprising introducing an injected gas (e.g., Argon, Xenon) into a beam line region comprising a magnetic scanner is provided herein. The injected gas improves beam current by enhancing (e.g., increasing, decreasing) charge neutralization of the magnetic ion beam (e.g., the ion beam at regions where the scanning magnetic field is non-zero) thereby reducing the current loss due to the zero field effect (ZFE). By reducing the current loss in regions having a magnetic field, the magnetic beam current is increased (e.g., the beam current is increased in regions where the magnetic field is non-zero) raising the overall beam current in a uniform manner over an entire scan path and thereby reducing the effect of the ZFE. In other words, the ZFE is removed by effectively minimizing it through an increase in the magnetized beam current.Type: ApplicationFiled: June 8, 2010Publication date: December 9, 2010Applicant: Axcelis Technologies Inc.Inventors: Bo H. Vanderberg, Steven C. Hays, Andy Ray
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Patent number: D424217Type: GrantFiled: March 16, 1999Date of Patent: May 2, 2000Assignee: Hoosier Fence CompanyInventor: Andy Ray Beachy
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Patent number: D430312Type: GrantFiled: December 6, 1999Date of Patent: August 29, 2000Assignee: Hoosier Fence CompanyInventor: Andy Ray Beachy