Abstract: The present invention provides tunable film bulk acoustic resonators (FBARs) with the resonant frequency of the acoustic wave to be excited and to be transmitted tuned by digital to analog converters which convert an input digital signal to an output DC voltage and provide DC bias voltages to the FBARs through integrated thin film biasing resistors. The polarity and the value of the output DC voltage are controlled by the input digital signal to achieve selection and tuning of the resonant frequency of the FBARs. A plurality of the tunable FBARs are connected to form microwave filters with tunable bandpass frequencies and oscillators with selectable resonating frequencies by varying the input digital signals applied to the digital to analog converters.

Abstract: Due to strong needs to reduce the dimensions and the cost of the RF filters and to reduce the number of filters required in an mobile handsets and wireless system covering numbers of operation bands, tunable RF filters which can cover as many bands or frequency ranges as possible are needed so that the number of filters can be reduced in the mobile handsets and wireless systems. The present invention provides tunable surface acoustic wave (SAW) IDT structures with the resonant frequency of the acoustic wave to be excited and to be transmitted tuned by digital to analog converters (DACs). The DAC converts an input digital signal to an output DC voltage and provide DC bias voltages to the SAW IDTs through integrated thin film biasing resistors. The polarity and the value of the output DC voltage are controlled by the input digital signal to achieve selection and tuning of the resonant frequency of the SAW IDTs.

Abstract: Structures of high electron mobility thin film transistors (HEM-TFTs) are provided in this invention. In one embodiment, HEM-TFTs with a single heterojunction structure are disclosed to have a substrate, a first metal oxide channel layer, a first spacer layer, a first doped layer, a first barrier layer, a source, a drain and a gate. In another embodiment, HEM-TFTs with a double heterojunction structure are provided to have a substrate, a second barrier layer, a second doped layer, a second spacer layer, a first metal oxide channel layer, a second spacer layer, a second doped layer, a second barrier layer, a source, a drain and a gate. In yet another embodiment, HEM-TFTs with a single heterojunction structure are disclosed to comprise a substrate, a first metal oxynitride channel layer, a first spacer layer, a first doped layer, a first barrier layer, a source, a drain and a gate.

Abstract: This invention provides pellets for a coffee drink comprising composition components selected from a group of coffee flavours, foam forming materials, binders, flavour enhancement materials, sugars and sweeteners. Ratio or composition and date of manufacturing of the pellets are impressed on each pellet for identification.

Abstract: Structures of high electron mobility thin film transistors (HEM-TFTs) are provided in this invention. In one embodiment, HEM-TFTs with a single heterojunction structure are disclosed to have a substrate, a first metal oxide channel layer, a first spacer layer, a first doped layer, a first barrier layer, a source, a drain and a gate. In another embodiment, HEM-TFTs with a double heterojunction structure are provided to have a substrate, a second barrier layer, a second doped layer, a second spacer layer, a first metal oxide channel layer, a second spacer layer, a second doped layer, a second barrier layer, a source, a drain and a gate. In yet another embodiment, HEM-TFTs with a single heterojunction structure are disclosed to comprise a substrate, a first metal oxynitride channel layer, a first spacer layer, a first doped layer, a first barrier layer, a source, a drain and a gate.

Abstract: Due to strong needs to reduce the dimensions and the cost of the RF filters and to reduce the number of filters required in an mobile handsets and wireless system covering numbers of operation bands, tunable RF filters which can cover as many bands or frequency ranges as possible are needed so that the number of filters can be reduced in the mobile handsets and wireless systems. The present invention provides tunable surface acoustic wave (SAW) IDT structures with the resonant frequency of the acoustic wave to be excited and to be transmitted tuned by digital to analog converters (DACs). The DAC converts an input digital signal to an output DC voltage and provide DC bias voltages to the SAW IDTs through integrated thin film biasing resistors. The polarity and the value of the output DC voltage are controlled by the input digital signal to achieve selection and tuning of the resonant frequency of the SAW IDTs.

Abstract: The present invention provides tunable film bulk acoustic resonators (FBARs) with the resonant frequency of the acoustic wave to be excited and to be transmitted tuned by digital to analog converters which convert an input digital signal to an output DC voltage and provide DC bias voltages to the FBARs through integrated thin film biasing resistors. The polarity and the value of the output DC voltage are controlled by the input digital signal to achieve selection and tuning of the resonant frequency of the FBARs. A plurality of the tunable FBARs are connected to form microwave filters with tunable bandpass frequencies and oscillators with selectable resonating frequencies by varying the input digital signals applied to the digital to analog converters.

Abstract: In wireless communications, many radio frequency bands are used. For each frequency band, there are two frequencies, one for transmitting and the other for receiving. As the band widths are small and separation between adjacent bands is also small, many band pass filters with different band pass frequencies are required for each communication unit such as mobile handset. The invention provides tunable film bulk acoustic resonators TFBARs containing semiconducting piezoelectric layers and methods for tuning and adjusting the resonant properties. When a DC biasing voltage is varied, both the depletion region thickness and neutral region thickness associated in the semiconducting piezoelectric layers varies leading to changes in equivalent capacitances, inductance and resistances and hence the resonance properties and frequencies.

Abstract: In wireless communications, many radio frequency bands are used. For each frequency band, there are two frequencies one for transmit and the other for receive. As the band widths are small and separation between adjacent bands is also small, many band pass filters with different band pass frequencies are required for each communication unit such as mobile handset. The present invention provides frequency tunable film bulk acoustic resonators (FBAR) with different structures. Thin film biasing resistors are integrated into the FBAR structure for DC biasing and RF isolation. A plurality of the present tunable FBARs are connected to form microwave filters with tunable bandpass frequencies and oscillators with selectable resonating frequencies by varying DC biasing voltages to the resonators.

Abstract: In wireless communications, many radio frequency bands are used. For each frequency band, there are two frequencies one for transmit and the other for receive. As the band widths are small and separation between adjacent bands is also small, many band pass filters with different band pass frequencies are required for each communication unit such as mobile handset. The present invention provides frequency tunable film bulk acoustic resonators (FBAR) with different structures. Thin film biasing resistors are integrated into the FBAR structure for DC biasing and RF isolation. A plurality of the present tunable FBARs are connected to form microwave filters with tunable bandpass frequencies and oscillators with selectable resonating frequencies by varying DC biasing voltages to the resonators.

Abstract: Due to strong needs to reduce the dimensions and the cost of the RF filters and to reduce the number of filters required in an mobile handsets and wireless system covering numbers of operation bands, tunable RF filters which can cover as many bands or frequency ranges as possible are needed so that the number of filters can be reduced in the mobile handsets and wireless systems. This invention provides tunable surface acoustic wave resonators and filters utilizing semiconducting piezoelectric layers having embedded or elevated electrode doped regions. Both metallization ratio and loading mass are changed by varying a DC biasing voltage to effect a change in the resonant frequency of the tunable SAW devices.

Abstract: Due to strong needs to reduce the dimensions and the cost of the RF filters and to reduce the number of filters required in an mobile handsets and wireless system covering numbers of operation bands, tunable RF filters which can cover as many bands or frequency ranges as possible are needed so that the number of filters can be reduced in the mobile handsets and wireless systems. This invention provides tunable surface acoustic wave resonators and filters utilizing semiconducting piezoelectric layers having embedded or elevated electrode doped regions. Both metallization ratio and loading mass are changed by varying a DC biasing voltage to effect a change in the resonant frequency of the tunable SAW devices.

Abstract: Filters and oscillators are important components for electronic systems especially those for communications. For many portable units operating at 2 GHz or less, surface acoustic wave resonators are used as filters or oscillators, the resonant frequency is determined by the electrode pitch and velocity of the surface acoustic waves. Because of the large number of frequency bands for communications, it is important to have SAW resonators where the resonant frequencies are tunable and adjustable. This invention provides tunable surface acoustic wave resonators utilizing semiconducting piezoelectric layers having embedded or elevated electrode doped regions. Both metallization ratio and loading mass are changed by varying a DC biasing voltage to effect a change in the resonant frequency. A plurality of the present tunable SAW devices may be connected into a tunable and selectable microwave filter for selecting and adjusting of the bandpass frequency or an tunable oscillator by varying the DC biasing voltages.

Abstract: In wireless communications, many radio frequency bands are used. For each frequency band, there are two frequencies, one for transmitting and the other for receiving. As the band widths are small and separation between adjacent bands is also small, many band pass filters with different band pass frequencies are required for each communication unit such as mobile handset. The invention provides tunable film bulk acoustic resonators TFBARs containing semiconducting piezoelectric layers and methods for tuning and adjusting the resonant properties. When a DC biasing voltage is varied, both the depletion region thickness and neutral region thickness associated in the semiconducting piezoelectric layers varies leading to changes in equivalent capacitances, inductance and resistances and hence the resonance properties and frequencies.

Abstract: A thin film transistor with a first metal oxynitride channel layer or a first metal oxide channel layer is provided to have controlled channel doping concentrations in a bottom surface region, a central channel region and a top surface region so that doping concentration ratios between the bottom surface region and the central channel region and between the top surface region and the central channel region are greater than a first threshold doping ratio and less than a second threshold doping ratio in order to retain more uniform charge carrier mobility values in the first channel layer and to improve the performance of the thin film transistor devices.

Abstract: A process for forming a T-gate with enhanced mechanical strength and a reduced gate length for high electron mobility transistors is provided. The process includes the steps of forming a stem portion cavity with rounded top edges to enhance the mechanical strength, creating an insoluble diffused feature shrinking layer to reduce the gate length, carrying out a thermal flow process to further reduce the gate length, and forming a head portion cavity with negative side wall slopes to facilitate lift-off of gate metal layers.

Abstract: An electron definable glass or an electron sensitive glass for microstructures is provided with microstructures and optical waveguides formed therein. The microstructures are formed by electron beam irradiation in selected areas in the electron definable glass followed by a high temperature heat treatment and chemical etching, whereas the optical waveguides are formed by irradiating the electron definable glass by an electron beam followed by a low temperature heat treatment.

Abstract: Transistors with a first metal oxynitride channel layer and a second metal oxynitride barrier layer are provided. The first metal oxynitride channel layer is lightly doped or without intentional doping to achieve high carrier mobility. Impurity atoms are introduced into the second metal oxynitride barrier layer and the donated carriers migrate or drift into the first metal oxynitride channel layer to effect high mobility conduction between source and drain.

Abstract: In one embodiment of the invention, a high electron mobility thin film transistor with a plurality of gate insulating layers and a metal oxynitride active channel layer is provided for forming a backplane circuit for pixel switching in an electronic display, to reduce unwanted ON state series resistance in the metal oxynitride active channel layer and minimize unwanted power dissipation in the backplane circuit. Another embodiment of the invention provides a high electron mobility thin film transistor structure with a plurality of metal oxynitride active channel layers and a gate insulating layer for forming a backplane circuit for pixel switching in an electronic display, to reduce unwanted ON state series resistance in the metal oxynitride active channel layer and to minimize unwanted power dissipation in the backplane circuit.

Abstract: Metal oxynitride diodes having at least a first metal oxynitride layer of a first conduction type and a second metal oxynitride layer of a second conduction type are provided. The first oxynitride layer is selectively doped or un-intentionally doped and have high carrier mobility. The second oxynitride layer is also selectively doped or un-intentionally doped and have high carrier mobility. A compensated oxynitride drift layer having a low carrier density may be adopted to increase the breakdown voltage of the device.