Abstract: An image sensor for a position sensor apparatus for ascertaining a position of at least one mirror of a lithography apparatus includes: a plurality of integrated optical waveguides; a plurality of incoupling areas; a multiplexer apparatus; and an image reconstruction apparatus.

Abstract: An apparatus for ascertaining a distance to an object has a light source that emits an optical signal having a time-varying frequency. An evaluation device ascertains a distance to the object based on a measurement signal that originated from the optical signal and was reflected at the object and, and on a reference signal that was not reflected at the object. A dispersive element produces a frequency-selective angle distribution of the measurement signal that has a plurality of partial signals which are steered to the object at mutually different angles.

Abstract: An image sensor for a position sensor apparatus for ascertaining a position of at least one mirror of a lithography apparatus includes: a plurality of integrated optical waveguides; a plurality of incoupling areas; a multiplexer apparatus; and an image reconstruction apparatus.

Abstract: In an aspect, a plurality of parameters characteristic of the patterned wafer are determined based on measurements of the intensity of electromagnetic radiation after the diffraction thereof at the patterned wafer. The intensity measurements are carried out for at least one used structure and at least one auxiliary structure. The parameters are determined based on intensity values measured during the intensity measurements for respectively different combinations of wavelength, polarization and/or order of diffraction, and also on the basis of correspondingly calculated intensity values, with a mathematical optimization method being applied.

Abstract: In an aspect, a plurality of parameters characteristic of the patterned wafer are determined based on measurements of the intensity of electromagnetic radiation after the diffraction thereof at the patterned wafer. The intensity measurements are carried out for at least one used structure and at least one auxiliary structure. The parameters are determined based on intensity values measured during the intensity measurements for respectively different combinations of wavelength, polarization and/or order of diffraction, and also on the basis of correspondingly calculated intensity values, with a mathematical optimization method being applied.