Patents by Inventor Aneeqa Bashir

Aneeqa Bashir has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20110113859
    Abstract: A low-voltage thin-film field-effect transistor is formed by forming a gate, forming a dielectric layer on the surface of the gate, forming a source region and a drain region, and forming a semiconductor layer adjacent the dielectric layer. The dielectric layer is formed as a native oxide layer by oxidizing the surface of the gate. The semiconductor layer is deposited by spray pyrolysis. The dielectric layer may be functionalized with a self-assembling monolayer dielectric layer. The dielectric layer may be formed as a self-assembling monolayer, without first forming a native oxide (or other) dielectric layer.
    Type: Application
    Filed: January 14, 2010
    Publication date: May 19, 2011
    Applicant: Imperial Innovations Limited
    Inventors: Thomas Anthopoulos, Donal Donat Conor Bradley, Aneeqa Bashir, Paul Henrich Wobkenberg