Patents by Inventor Aneesh Nainani
Aneesh Nainani has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9570307Abstract: Provided are methods of doping substrates and making doped semiconductor features. An exemplary method includes providing a substrate having at least one feature having an aspect ratio; depositing a layer of dopants onto the substrate, the layer of dopants having a shape conforming to the at least one feature. A dielectric layer is deposited onto the layer of dopants, the dielectric layer having a shape conforming to the layer of dopants. The dielectric layer is annealed to diffuse the dopants into the substrate.Type: GrantFiled: November 12, 2015Date of Patent: February 14, 2017Assignee: APPLIED MATERIALS, INC.Inventors: Aneesh Nainani, Mathew Abraham, Er-Xuan Ping
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Patent number: 9543172Abstract: Apparatus for providing heat energy to a process chamber are provided herein. The apparatus may include a process chamber body of the process chamber, a solid state source array having a plurality of solid state sources, disposed on a first substrate, to provide heat energy to the process chamber to heat a target component disposed in the process chamber body, and at least one reflector disposed on the first substrate proximate to one or more of the plurality of solid state sources to direct heat energy provided by the one or more of the plurality of solid state sources towards the target component.Type: GrantFiled: October 1, 2013Date of Patent: January 10, 2017Assignee: APPLIED MATERIALS, INC.Inventors: Joseph Johnson, Joseph M. Ranish, John Gerling, Mathew Abraham, Aaron Muir Hunter, Aneesh Nainani
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Patent number: 9378941Abstract: An electron beam plasma source is used in a soft plasma surface treatment of semiconductor surfaces containing Ge or group III-V compound semiconductor materials.Type: GrantFiled: October 28, 2013Date of Patent: June 28, 2016Assignee: APPLIED MATERIALS, INC.Inventors: Aneesh Nainani, Bhushan N. Zope, Leonid Dorf, Shahid Rauf, Adam Brand, Mathew Abraham, Subhash Deshmukh
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Publication number: 20160079064Abstract: Provided are methods of doping substrates and making doped semiconductor features. An exemplary method includes providing a substrate having at least one feature having an aspect ratio; depositing a layer of dopants onto the substrate, the layer of dopants having a shape conforming to the at least one feature. A dielectric layer is deposited onto the layer of dopants, the dielectric layer having a shape conforming to the layer of dopants. The dielectric layer is annealed to diffuse the dopants into the substrate.Type: ApplicationFiled: November 12, 2015Publication date: March 17, 2016Inventors: Aneesh Nainani, Mathew Abraham, Er-Xuan Ping
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Patent number: 9218973Abstract: Provided are methods of doping substrates and making doped semiconductor features. An exemplary method includes providing a substrate having at least one feature having an aspect ratio; depositing a layer of dopants onto the substrate, the layer of dopants having a shape conforming to the at least one feature. A dielectric layer is deposited onto the layer of dopants, the dielectric layer having a shape conforming to the layer of dopants. The dielectric layer is annealed to diffuse the dopants into the substrate.Type: GrantFiled: June 13, 2013Date of Patent: December 22, 2015Assignee: Applied Materials, Inc.Inventors: Aneesh Nainani, Mathew Abraham, Er-Xuan Ping
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Publication number: 20150136214Abstract: Junction-less solar cells having three or more terminals are provided. Electron- and hole-selective contacts and interfaces are used in combination with two or more absorber layers having different bandgaps to provide multi-material solar cells that have no requirement for either lattice matching or current matching.Type: ApplicationFiled: November 20, 2014Publication date: May 21, 2015Inventors: Raisul Islam, Gautam Shine, Aneesh Nainani, Krishna C. Saraswat
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Publication number: 20150093862Abstract: An electron beam plasma source is used in a soft plasma surface treatment of semiconductor surfaces containing Ge or group III-V compound semiconductor materials.Type: ApplicationFiled: October 28, 2013Publication date: April 2, 2015Applicant: APPLIED MATEIRALS, INC.Inventors: Aneesh Nainani, Bhushan N. Zope, Leonid Dorf, Shahid Rauf, Adam Brand, Mathew Abraham, Subhash Deshmukh
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Patent number: 8969924Abstract: Various aspects of the invention are directed to memory circuits and their implementation. According to an example embodiment, an apparatus includes a channel region between raised source and drain regions which are configured and arranged with respective bandgap offsets relative to the channel region to confine carriers in the channel region. The apparatus also includes front and back gates respectively separated from the channel region by gate dielectrics. The raised source and drain regions have respective portions laterally adjacent the front gate and adjacent the channel region. Carriers are stored in the channel region via application of voltage(s) to the front and back gates, and relative to bias(es) at the source and drain regions.Type: GrantFiled: February 22, 2013Date of Patent: March 3, 2015Assignee: The Board of Trustees of the Leland Stanford Junior UniversityInventors: Ashish Pal, Aneesh Nainani, Krishna Chandra Saraswat
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Patent number: 8933488Abstract: In accordance with one or more embodiments, an apparatus and method involves a channel region, barrier layers separated by the channel region and a dielectric on one of the barrier layers. The barrier layers have band gaps that are different than a band gap of the channel region, and confine both electrons and holes in the channel region. A gate electrode applies electric field to the channel region via the dielectric. In various contexts, the apparatus and method are amenable to implementation for both electron-based and hole-based implementations, such as for nmos, pmos, and cmos applications.Type: GrantFiled: December 1, 2011Date of Patent: January 13, 2015Assignee: The Board of Trustees of the Leland Stanford Junior UniverityInventors: Aneesh Nainani, Krishna Chandra Saraswat
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Publication number: 20140273504Abstract: A substrate processing chamber comprising a chamber wall enclosing a process zone having an exhaust port, a substrate support to support a substrate in the process zone, a gas distributor for providing a deposition gas to the process zone, a solid state light source capable of irradiating substantially the entire surface of the substrate with light, and a gas energizer for energizing the deposition gas.Type: ApplicationFiled: March 15, 2013Publication date: September 18, 2014Applicant: APPLIED MATERIALS, INC.Inventors: Aneesh Nainani, Joseph Johnson, Er-Xuan Ping, Adam Brand, Mathew Abraham
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Publication number: 20140105583Abstract: Apparatus for providing heat energy to a process chamber are provided herein. The apparatus may include a process chamber body of the process chamber, a solid state source array having a plurality of solid state sources, disposed on a first substrate, to provide heat energy to the process chamber to heat a target component disposed in the process chamber body, and at least one reflector disposed on the first substrate proximate to one or more of the plurality of solid state sources to direct heat energy provided by the one or more of the plurality of solid state sources towards the target component.Type: ApplicationFiled: October 1, 2013Publication date: April 17, 2014Applicant: Applied Materials, Inc.Inventors: JOSEPH JOHNSON, JOSEPH M. RANISH, JOHN GERLING, MATHEW ABRAHAM, AARON MUIR HUNTER, ANEESH NAINANI
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Publication number: 20140004689Abstract: Provided are methods of doping substrates and making doped semiconductor features. An exemplary method includes providing a substrate having at least one feature having an aspect ratio; depositing a layer of dopants onto the substrate, the layer of dopants having a shape conforming to the at least one feature. A dielectric layer is deposited onto the layer of dopants, the dielectric layer having a shape conforming to the layer of dopants. The dielectric layer is annealed to diffuse the dopants into the substrate.Type: ApplicationFiled: June 13, 2013Publication date: January 2, 2014Inventors: Aneesh Nainani, Mathew Abraham, Er-Xuan Ping
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Publication number: 20130307025Abstract: Various aspects of the invention are directed to memory circuits and their implementation. According to an example embodiment, an apparatus includes a channel region between raised source and drain regions which are configured and arranged with respective bandgap offsets relative to the channel region to confine carriers in the channel region. The apparatus also includes front and back gates respectively separated from the channel region by gate dielectrics. The raised source and drain regions have respective portions laterally adjacent the front gate and adjacent the channel region. Carriers are stored in the channel region via application of voltage(s) to the front and back gates, and relative to bias(es) at the source and drain regions.Type: ApplicationFiled: February 22, 2013Publication date: November 21, 2013Applicant: The Board of Trustees of the Leland Stanford Junior UniversityInventors: Ashish Pal, Aneesh Nainani, Krishna Chandra Saraswat
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Publication number: 20120138899Abstract: In accordance with one or more embodiments, an apparatus and method involves a channel region, barrier layers separated by the channel region and a dielectric on one of the barrier layers. The barrier layers have band gaps that are different than a band gap of the channel region, and confine both electrons and holes in the channel region. A gate electrode applies electric field to the channel region via the dielectric. In various contexts, the apparatus and method are amenable to implementation for both electron-based and hole-based implementations, such as for nmos, pmos, and cmos applications.Type: ApplicationFiled: December 1, 2011Publication date: June 7, 2012Inventors: Aneesh Nainani, Krishna Chandra Saraswat