Patents by Inventor Aneesha P. Deo

Aneesha P. Deo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6681350
    Abstract: A method for testing memory cells for data retention faults is disclosed. A first logical value is stored in a first cell, and a second logical value is stored in a second cell of a memory device. The second cell shares the same column with the first cell. The bitlines associated with the first and second cells are prevented from being precharged before the second cell can be read. After the second cell has been read repeatedly, the first cell is read, and the bitlines associated with the first and second cells are precharged. At this point, a data retention fault is determined to have occurred if the first cell does not contain the first logical value.
    Type: Grant
    Filed: May 5, 2001
    Date of Patent: January 20, 2004
    Assignee: Cadence Design Systems, Inc.
    Inventors: R. Dean Adams, Aneesha P. Deo, Kamran Zarrineh
  • Publication number: 20020166086
    Abstract: A method for testing memory cells for data retention faults is disclosed. A first logical value is stored in a first cell, and a second logical value is stored in a second cell of a memory device. The second cell shares the same column with the first cell. The bitlines associated with the first and second cells are prevented from being precharged before the second cell can be read. After the second cell has been read repeatedly, the first cell is read, and the bitlines associated with the first and second cells are precharged. At this point, a data retention fault is determined to have occurred if the first cell does not contain the first logical value.
    Type: Application
    Filed: May 5, 2001
    Publication date: November 7, 2002
    Applicant: International Business Machines Corporation
    Inventors: R. Dean Adams, Aneesha P. Deo, Kamran Zarrineh