Patents by Inventor Anett Moll

Anett Moll has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for fabricating a trench capacitor for a semiconductor memory
    Patent number: 6734077
    Abstract: A method for fabricating a trench capacitor for a semiconductor memory includes forming a masking layer in a trench that is disposed in a substrate. Nanocrystallites, which are used to pattern the masking layer, are deposited on the masking layer. Microtrenches are etched into the substrate in a lower region of the trench by the patterned masking layer. The microtrenches form a roughened trench sidewall. As a result, the outer capacitor electrode is formed with a larger surface area, allowing the trench capacitor to have a higher capacitance.
    Type: Grant
    Filed: September 4, 2002
    Date of Patent: May 11, 2004
    Assignee: Infineon Technologies AG
    Inventors: Matthias Förster, Kristin Schupke, Anja Morgenschweis, Anett Moll, Jens-Uwe Sachse
  • Method for fabricating a trench capacitor for a semiconductor memory
    Publication number: 20030068867
    Abstract: A method for fabricating a trench capacitor for a semiconductor memory includes forming a masking layer in a trench that is disposed in a substrate. Nanocrystallites, which are used to pattern the masking layer, are deposited on the masking layer. Microtrenches are etched into the substrate in a lower region of the trench by the patterned masking layer. The microtrenches form a roughened trench sidewall. As a result, the outer capacitor electrode is formed with a larger surface area, allowing the trench capacitor to have a higher capacitance.
    Type: Application
    Filed: September 4, 2002
    Publication date: April 10, 2003
    Inventors: Matthias Forster, Kristin Schupke, Anja Morgenschweis, Anett Moll, Jens-Uwe Sachse