Patents by Inventor Ang CHAN
Ang CHAN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11923205Abstract: A method for manufacturing a semiconductor device includes: providing a wafer-bonding stack structure having a sidewall layer and an exposed first component layer; forming a photoresist layer on the first component layer; performing an edge trimming process to at least remove the sidewall layer; and removing the photoresist layer. In this way, contaminant particles generated from the blade during the edge trimming process may fall on the photoresist layer but not fall on the first component layer, so as to protect the first component layer from being contaminated.Type: GrantFiled: December 17, 2021Date of Patent: March 5, 2024Assignee: UNITED MICROELECTRONICS CORPORATIONInventors: Kun-Ju Li, Ang Chan, Hsin-Jung Liu, Wei-Xin Gao, Jhih-Yuan Chen, Chun-Han Chen, Zong-Sian Wu, Chau-Chung Hou, I-Ming Lai, Fu-Shou Tsai
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Publication number: 20240071988Abstract: A method for manufacturing a semiconductor structure is provided. The method includes: providing a substrate and a dielectric layer on the substrate; forming a hole in the dielectric layer; forming an initial barrier material layer and a conductive layer on an upper surface of the dielectric layer and in the hole; removing part of the initial barrier material layer and part of the conductive layer to form a barrier material layer and a via element in the hole respectively and expose the upper surface of the dielectric layer. An upper surface of the barrier material layer is higher than the upper surface of the dielectric layer.Type: ApplicationFiled: October 11, 2022Publication date: February 29, 2024Inventors: Kun-Ju LI, Hsin-Jung LIU, Wei-Xin GAO, Jhih-Yuan CHEN, Ang CHAN, Chau-Chung HOU
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Publication number: 20240055401Abstract: A semiconductor assembly and a method for manufacturing the same are provided. The semiconductor assembly includes a first substrate, a first well in the first substrate and having a first doping type, a second substrate, a second well in the second substrate and having a second doping type, a first dielectric layer between the first substrate and the second substrate, and a second dielectric layer between the first substrate and the second substrate. The first doping type is different from the second doping type. The second dielectric layer is bonded to the first dielectric layer. The first well overlaps with the second well in a vertical direction.Type: ApplicationFiled: September 8, 2022Publication date: February 15, 2024Inventors: Kun-Ju LI, Hsin-Jung LIU, Zong-Sian WU, Wei-Xin GAO, Jhih-Yuan CHEN, Ang CHAN, Chau-Chung HOU, Hsiang-Chi CHIEN, I-Ming LAI
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Publication number: 20230200088Abstract: A semiconductor device includes a first magnetic tunneling junction (MTJ) and a second MTJ on a substrate, a first ultra low-k (ULK) dielectric layer on the first MTJ and the second MTJ, a passivation layer on the first ULK dielectric layer, and a second ULK dielectric layer on the passivation layer.Type: ApplicationFiled: February 23, 2023Publication date: June 22, 2023Applicant: UNITED MICROELECTRONICS CORP.Inventors: Kun-Ju Li, Tai-Cheng Hou, Hsin-Jung Liu, Fu-Yu Tsai, Bin-Siang Tsai, Chau-Chung Hou, Yu-Lung Shih, Ang Chan, Chih-Yueh Li, Chun-Tsen Lu
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Publication number: 20230197467Abstract: A method for manufacturing a semiconductor device includes: providing a wafer-bonding stack structure having a sidewall layer and an exposed first component layer; forming a photoresist layer on the first component layer; performing an edge trimming process to at least remove the sidewall layer; and removing the photoresist layer. In this way, contaminant particles generated from the blade during the edge trimming process may fall on the photoresist layer but not fall on the first component layer, so as to protect the first component layer from being contaminated.Type: ApplicationFiled: December 17, 2021Publication date: June 22, 2023Inventors: KUN-JU LI, Ang Chan, HSIN-JUNG LIU, WEI-XIN GAO, Jhih-Yuan Chen, Chun-Han Chen, Zong-Sian Wu, Chau-Chung Hou, I-MING LAI, FU-SHOU TSAI
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Patent number: 11621296Abstract: A method for fabricating semiconductor device includes the steps of: forming a first magnetic tunneling junction (MTJ) and a second MTJ on a substrate; forming a first top electrode on the first MTJ and a second top electrode on the second MTJ; forming a first ultra low-k (ULK) dielectric layer on the first MTJ and the second MTJ; forming a passivation layer on the first ULK dielectric layer, wherein a bottom surface of the passivation layer between the first MTJ and the second MTJ is lower than a top surface of the first MTJ; and forming a second ULK dielectric layer on the passivation layer.Type: GrantFiled: April 6, 2021Date of Patent: April 4, 2023Assignee: UNITED MICROELECTRONICS CORP.Inventors: Kun-Ju Li, Tai-Cheng Hou, Hsin-Jung Liu, Fu-Yu Tsai, Bin-Siang Tsai, Chau-Chung Hou, Yu-Lung Shih, Ang Chan, Chih-Yueh Li, Chun-Tsen Lu
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Publication number: 20230051000Abstract: A semiconductor structure includes a first dielectric layer on a substrate, a conductive structure disposed in the first dielectric layer and including a terminal portion and an extending portion connecting the terminal portion and extending away from the terminal portion, a second dielectric layer disposed on the first dielectric layer, a conductive via through the second dielectric layer and directly contacting the extending portion, and a dummy via through the second dielectric layer and directly contacting the terminal portion. In a cross-sectional view, a width of the dummy via is smaller than 50% of a width of the conductive via.Type: ApplicationFiled: October 5, 2021Publication date: February 16, 2023Applicant: UNITED MICROELECTRONICS CORP.Inventors: Ang Chan, Hsin-Jung Liu, Kun-Ju Li, Chau-Chung Hou, Fu-Shou Tsai, Yu-Lung Shih, Jhih-Yuan Chen, Chun-Han Chen, Wei-Xin Gao, Shih-Ming Lin
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Patent number: 11482666Abstract: A semiconductor substrate is provided. The semiconductor substrate has thereon a first dielectric layer, at least one conductive pattern disposed in the first dielectric layer, and a second dielectric layer covering the first dielectric layer and the at least one conductive pattern. A via opening is formed in the second dielectric layer. The via opening exposes a portion of the at least one conductive pattern. A polish stop layer is conformally deposited on the second dielectric layer and within the via opening. A barrier layer is conformally deposited on the polish stop layer. A tungsten layer is conformally deposited on the barrier layer. The tungsten layer and the barrier layer are polished until the polish stop layer on the second dielectric layer is exposed, thereby forming a via plug in the via opening. A bottom electrode layer is conformally deposited on the second dielectric layer and the via plug.Type: GrantFiled: September 17, 2020Date of Patent: October 25, 2022Assignee: UNITED MICROELECTRONICS CORP.Inventors: Hsin-Jung Liu, Chau-Chung Hou, Ang Chan, Kun-Ju Li, Wen-Chin Lin
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Publication number: 20220085284Abstract: A semiconductor substrate is provided. The semiconductor substrate has thereon a first dielectric layer, at least one conductive pattern disposed in the first dielectric layer, and a second dielectric layer covering the first dielectric layer and the at least one conductive pattern. A via opening is formed in the second dielectric layer. The via opening exposes a portion of the at least one conductive pattern. A polish stop layer is conformally deposited on the second dielectric layer and within the via opening. A barrier layer is conformally deposited on the polish stop layer. A tungsten layer is conformally deposited on the barrier layer. The tungsten layer and the barrier layer are polished until the polish stop layer on the second dielectric layer is exposed, thereby forming a via plug in the via opening. A bottom electrode layer is conformally deposited on the second dielectric layer and the via plug.Type: ApplicationFiled: September 17, 2020Publication date: March 17, 2022Inventors: Hsin-Jung Liu, Chau-Chung Hou, Ang Chan, Kun-Ju Li, Wen-Chin Lin
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Patent number: 11145602Abstract: An alignment mark structure includes a dielectric layer. A trench is embedded in the dielectric layer. An alignment mark fills up the trench, wherein the alignment mark includes a metal layer covering the trench. A first material layer covers and contacts the metal layer. A second material layer covers and contacts the first material layer. A third material layer covers and contacts the second material layer. The first material layer, the second material layer, and the third material layer independently includes silicon nitride, silicon oxide, tantalum-containing material, aluminum-containing material, titanium-containing material, or a low-k dielectric having a dielectric constant smaller than 2.7, and a reflectance of the first material layer is larger than a reflectance of the second material layer, the reflectance of the second material layer is larger than a reflectance of the third material layer.Type: GrantFiled: February 10, 2020Date of Patent: October 12, 2021Assignee: UNITED MICROELECTRONICS CORP.Inventors: Kun-Ju Li, Jhih-Yuan Chen, Hsin-Jung Liu, Chau-Chung Hou, Yu-Lung Shih, Ang Chan, Fu-Chun Hsiao, Ji-Min Lin, Chun-Han Chen
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Publication number: 20210249357Abstract: An alignment mark structure includes a dielectric layer. A trench is embedded in the dielectric layer. An alignment mark fills up the trench, wherein the alignment mark includes a metal layer covering the trench. A first material layer covers and contacts the metal layer. A second material layer covers and contacts the first material layer. A third material layer covers and contacts the second material layer. The first material layer, the second material layer, and the third material layer are independently comprises silicon nitride, silicon oxide, tantalum-containing material, aluminum-containing material, titanium-containing material, or a low-k dielectric having a dielectric constant smaller than 2.7, and a reflectance of the first material layer is larger than a reflectance of the second material layer, the reflectance of the second material layer is larger than a reflectance of the third material layer.Type: ApplicationFiled: February 10, 2020Publication date: August 12, 2021Inventors: Kun-Ju Li, Jhih-Yuan Chen, Hsin-Jung Liu, Chau-Chung Hou, Yu-Lung Shih, Ang Chan, Fu-Chun Hsiao, Ji-Min Lin, Chun-Han Chen
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Publication number: 20210225932Abstract: A method for fabricating semiconductor device includes the steps of: forming a first magnetic tunneling junction (MTJ) and a second MTJ on a substrate; forming a first top electrode on the first MTJ and a second top electrode on the second MTJ; forming a first ultra low-k (ULK) dielectric layer on the first MTJ and the second MTJ; forming a passivation layer on the first ULK dielectric layer, wherein a bottom surface of the passivation layer between the first MTJ and the second MTJ is lower than a top surface of the first MTJ; and forming a second ULK dielectric layer on the passivation layer.Type: ApplicationFiled: April 6, 2021Publication date: July 22, 2021Inventors: Kun-Ju Li, Tai-Cheng Hou, Hsin-Jung Liu, Fu-Yu Tsai, Bin-Siang Tsai, Chau-Chung Hou, Yu-Lung Shih, Ang Chan, Chih-Yueh Li, Chun-Tsen Lu
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Patent number: 11004897Abstract: A method for fabricating semiconductor device includes the steps of: forming a first magnetic tunneling junction (MTJ) and a second MTJ on a substrate; forming a first top electrode on the first MTJ and a second top electrode on the second MTJ; forming a first ultra low-k (ULK) dielectric layer on the first MTJ and the second MTJ; forming a passivation layer on the first ULK dielectric layer, wherein a bottom surface of the passivation layer between the first MTJ and the second MTJ is lower than a top surface of the first MTJ; and forming a second ULK dielectric layer on the passivation layer.Type: GrantFiled: August 4, 2019Date of Patent: May 11, 2021Assignee: UNITED MICROELECTRONICS CORP.Inventors: Kun-Ju Li, Tai-Cheng Hou, Hsin-Jung Liu, Fu-Yu Tsai, Bin-Siang Tsai, Chau-Chung Hou, Yu-Lung Shih, Ang Chan, Chih-Yueh Li, Chun-Tsen Lu
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Publication number: 20210005662Abstract: A method for fabricating semiconductor device includes the steps of: forming a first magnetic tunneling junction (MTJ) and a second MTJ on a substrate; forming a first top electrode on the first MTJ and a second top electrode on the second MTJ; forming a first ultra low-k (ULK) dielectric layer on the first MTJ and the second MTJ; forming a passivation layer on the first ULK dielectric layer, wherein a bottom surface of the passivation layer between the first MTJ and the second MTJ is lower than a top surface of the first MTJ; and forming a second ULK dielectric layer on the passivation layer.Type: ApplicationFiled: August 4, 2019Publication date: January 7, 2021Inventors: Kun-Ju Li, Tai-Cheng Hou, Hsin-Jung Liu, Fu-Yu Tsai, Bin-Siang Tsai, Chau-Chung Hou, Yu-Lung Shih, Ang Chan, Chih-Yueh Li, Chun-Tsen Lu
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Patent number: 10804461Abstract: A method for manufacturing a memory device is provided, the method includes the following steps: firstly, providing a dielectric layer, then simultaneously forming a contact window and an alignment mark trench in the dielectric layer, wherein the contact window exposes a lower metal line, then forming a conductive layer on the surface of the dielectric layer, in the contact window and in the alignment mark trench, performing a planarization step on the conductive layer, and leaving a residue in the alignment mark trench. Subsequently, a nitrogen plasma step (N2 plasma) is performed on the dielectric layer, a cleaning step is performed to remove the residue in the alignment mark trench, and a patterned magnetic tunneling junction, MTJ) film is laminated on the contact window.Type: GrantFiled: July 22, 2019Date of Patent: October 13, 2020Assignee: UNITED MICROELECTRONICS CORP.Inventors: Hsin-Jung Liu, Kun-Ju Li, Ang Chan, Chau-Chung Hou, Yu-Lung Shih
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Publication number: 20200185597Abstract: A memory device includes an insulation layer, a memory cell region and an alignment mark region are defined on the insulation layer, an interconnection structure disposed in the insulation layer, a dielectric layer disposed on the insulation layer and the interconnection structure, the dielectric layer is disposed within the memory cell region and the alignment mark region, a conductive via plug disposed on the interconnection structure within the memory cell region, the conductive via plug has a concave top surface, an alignment mark trench penetrating the dielectric layer within the alignment mark region, a bottom electrode disposed on the conductive via plug within the memory cell region and disposed in the alignment mark trench within the alignment mark region, and a magnetic tunnel junction (MTJ) structure disposed on the bottom electrode within the memory cell region and disposed in the alignment mark trench within the alignment mark region.Type: ApplicationFiled: December 11, 2018Publication date: June 11, 2020Inventors: Kun-Ju Li, Hsin-Jung Liu, I-Ming Tseng, Chau-Chung Hou, Yu-Lung Shih, Fu-Chun Hsiao, Hui-Lin Wang, Tzu-Hsiang Hung, Chih-Yueh Li, Ang Chan, Jing-Yin Jhang
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Publication number: 20170186712Abstract: A chip package including a substrate is provided. The substrate includes a front surface, a back surface, and a side surface. A redistribution layer is disposed on the back surface and is electrically connected to a sensing or device region in the substrate. A protection layer covers the redistribution layer and extends onto the side surface. A cover plate is disposed on the front surface and laterally protrudes from the protection layer on the side surface. The cover plate includes a first surface facing the front surface and a second surface facing away from the front surface. A bottom portion of the cover plate broadens from the first surface towards the second surface. A method of forming the chip package is also provided.Type: ApplicationFiled: December 28, 2016Publication date: June 29, 2017Inventors: Chia-Lun SHEN, Po-Shen LIN, Ang CHAN