Abstract: A semiconductor device includes a first magnetic tunneling junction (MTJ) and a second MTJ on a substrate, a first ultra low-k (ULK) dielectric layer on the first MTJ and the second MTJ, a passivation layer on the first ULK dielectric layer, and a second ULK dielectric layer on the passivation layer.

Abstract: The present disclosure provides for methods of phosphidation, catalysts formed from phosphidation, and methods of producing H2.

Abstract: The present disclosure provides for methods of phosphidation, catalysts formed from phosphidation, and methods of producing Hz.

Abstract: Graphene layers can be formed on a dielectric substrate using a process that includes forming a copper thin film on a dielectric substrate; diffusing carbon atoms through the copper thin film; and forming a graphene layer at an interface between the copper thin film and the dielectric substrate.

Abstract: Graphene layers can be formed on a dielectric substrate using a process that includes forming a copper thin film on a dielectric substrate; diffusing carbon atoms through the copper thin film; and forming a graphene layer at an interface between the copper thin film and the dielectric substrate.

Abstract: The invention discloses a method and apparatus for transferring nano-carbon material. The nano-carbon material is grown, by chemical vapor deposition, on a catalyst layer provided between a first and a second oxide layer of a multilayer film structure grown on a first substrate through chemical vapor deposition, and then separated from the first substrate by etching away the first and second oxide layers by a wet etching process. The separated nano-carbon material floats on the etchant, and is then pulled up by an etch-resistant continuous conveyance device and transferred to a second substrate. And, in a further imprinting process, large area nano-carbon material can be continuously imprinted onto the second substrate to show a particularly designed pattern.

Abstract: In a method and apparatus for transferring carbonaceous material layer, a carbonaceous material layer is grown on a growth substrate, and a first continuous conveying unit is used to feed the growth substrate and a transfer material, so that a gluing layer of the transfer material is attached to the carbonaceous material layer on the growth substrate. Then, a transformation device changes a viscosity of the gluing layer for the latter to adhere to the carbonaceous material layer. A second continuous conveying unit is further used to transfer and then separate the mutually adhered transfer material and growth substrate from each other, so that some part of the carbonaceous material layer is transferred onto the gluing layer while other part of the carbonaceous material layer remains on the growth substrate. Thus, at least a one-layer-thickness of the carbonaceous material layer is transferred.