Abstract: A molded semiconductor package includes: a semiconductor die; a substrate attached to a first side of the semiconductor die; a plurality of leads electrically connected to a pad at a second side of the semiconductor die opposite the first side; a heat sink clip thermally coupled to the pad; and a molding compound encapsulating the semiconductor die, part of the leads, part of the heat sink clip, and at least part of the substrate. The molding compound has a first main side, a second main side opposite the first main side and at which the substrate is disposed, and an edge extending between the first main side and the second main side. The leads protrude from opposing first and second faces of the edge of the molding compound. The heat sink clip protrudes from opposing third and fourth faces of the edge of the molding compound.

Abstract: A molded semiconductor package includes: a semiconductor die; a substrate attached to a first side of the semiconductor die; a plurality of leads electrically connected to a pad at a second side of the semiconductor die opposite the first side; a heat sink clip thermally coupled to the pad; and a molding compound encapsulating the semiconductor die, part of the leads, part of the heat sink clip, and at least part of the substrate. The molding compound has a first main side, a second main side opposite the first main side and at which the substrate is disposed, and an edge extending between the first main side and the second main side. The leads protrude from opposing first and second faces of the edge of the molding compound. The heat sink clip protrudes from opposing third and fourth faces of the edge of the molding compound.

Abstract: A semiconductor module includes: a dual-gauge leadframe having thicker and thinner parts, part of the thinner part forming a high voltage lead; a semiconductor die attached to the thicker part; and a molding compound (MC) encapsulating the die. The thicker leadframe part is disposed at a bottom side of the MC. A side face of the MC has a stepped region between the high voltage lead and thicker leadframe part. A first generally vertical part of the stepped region extends from the high voltage lead to the generally horizontal part, a generally horizontal part of the stepped region extends to the second generally vertical part, and a second generally vertical part of the stepped region extends to the bottom side of the MC. A linear dimension of the generally horizontal part as measured from the first generally vertical part to the second generally vertical part is at least 4.5 mm.

Abstract: A semiconductor module includes: a dual-gauge leadframe having thicker and thinner parts, part of the thinner part forming a high voltage lead; a semiconductor die attached to the thicker part; and a molding compound (MC) encapsulating the die. The thicker leadframe part is disposed at a bottom side of the MC. A side face of the MC has a stepped region between the high voltage lead and thicker leadframe part. A first generally vertical part of the stepped region extends from the high voltage lead to the generally horizontal part, a generally horizontal part of the stepped region extends to the second generally vertical part, and a second generally vertical part of the stepped region extends to the bottom side of the MC. A linear dimension of the generally horizontal part as measured from the first generally vertical part to the second generally vertical part is at least 4.5 mm.