Abstract: The invention relates to a conversion element comprising a wavelength-converting conversion material, a matrix material in which the conversion material is inserted, and a substrate on which the matrix material and the conversion material are directly arranged, the matrix material comprising at least one condensed sol-gel material selected from the following group: water glass, metal phosphate, aluminium phosphate, monoaluminium phosphate, modified monoaluminium phosphate, alkoxytetramethoxysilane, tetraethyl orthosilicate, methyltrimethoxysilane, methyltriethoxysilane, titanium alkoxide, silica sol, metal alkoxide, metal oxane or metal alkoxane, the conversion element being arranged in the beam path of a laser source, the conversion element being mounted in a mechanically immobile manner in relation to the laser source, and the radiation of the laser source being dynamically arranged in relation to the conversion element.

Abstract: The invention relates to an optoelectronic component comprising—a semiconductor chip that emits primary electromagnetic radiation of a first wavelength range during operation and—a conversion element, wherein the conversion element comprises a wavelength-converting material and a matrix material, wherein the matrix material includes a polysiloxane having at least 90 wt. % condensed silicates relative to the total weight of the matrix material, and the condensed silicate consists of silicon atoms and oxygen atoms. The conversion element is designed to emit secondary electromagnetic radiation of a second wavelength range, and the conversion element is arranged after the semiconductor chip and an adhesion-promoting layer is arranged between the conversion element and the semiconductor chip, and/or a carrier is arranged on the side of the conversion element facing away from the semiconductor chip.

Abstract: An optoelectronic component and a method for producing an optoelectronic component are disclosed. In an embodiment an optoelectronic component includes a semiconductor layer sequence having an active region configured to emit radiation at least via a main radiation exit surface during operation and a self-supporting conversion element arranged in a beam path of the semiconductor layer sequence, wherein the self-supporting conversion element includes a substrate and subsequently a first layer, wherein the first layer includes at least one conversion material embedded in a matrix material, wherein the matrix material includes at least one condensed sol-gel material, wherein the condensed sol-gel material has a proportion between 10 and 70 vol % in the first layer, and wherein the substrate is free of the sol-gel material and the conversion material and mechanically stabilizes the first layer.

Abstract: A conversion element, an optoelectronic component, an arrangement and a method for producing a conversion element are disclosed. In an embodiment an arrangement includes a conversion element having a wavelength converting conversion material, a matrix material in which the conversion material is embedded and a substrate on which the matrix material with the embedded conversion material is directly arranged, wherein at least one condensed sol-gel material, and a laser source configured to emit primary radiation during operation, wherein the conversion element is arranged in a beam path of the laser source, wherein the conversion element is mechanically immovably mounted with respect to the laser source, and wherein the primary radiation of the laser source is dynamically arranged to the conversion element.

Abstract: In an embodiment an optoelectronic component includes a first joining partner including an LED chip with a structured light-emitting surface and a compensation layer applied to the light-emitting surface, wherein the compensation layer has a surface facing away from the light-emitting surface and spaced apart from the light-emitting surface, and wherein the surface forms a first connecting surface, a second joining partner having a second connecting surface, the first and second connecting surfaces being arranged such that they face each other and a bonding layer made of a film of low-melting glass having a layer thickness of not more than 1 ?m, wherein the bonding layer bonds the first and second connecting surfaces together, wherein the structure of the light-emitting surface is embedded in the compensation layer, and wherein the first and second connecting surfaces are smooth such that their surface roughness, expressed as center-line roughness, is less than or equal to 50 nm.

Abstract: The invention relates to a conversion element comprising a wavelength-converting conversion material, a matrix material in which the conversion material is inserted, and a substrate on which the matrix material and the conversion material are directly arranged, the matrix material comprising at least one condensed sol-gel material selected from the following group: water glass, metal phosphate, aluminium phosphate, monoaluminium phosphate, modified monoaluminium phosphate, alkoxytetramethoxysilane, tetraethyl orthosilicate, methyltrimethoxysilane, methyltriethoxysilane, titanium alkoxide, silica sol, metal alkoxide, metal oxane or metal alkoxane, the conversion element being arranged in the beam path of a laser source, the conversion element being mounted in a mechanically immobile manner in relation to the laser source, and the radiation of the laser source being dynamically arranged in relation to the conversion element.

Abstract: A conversion element, an optoelectronic component, an arrangement and a method for producing a conversion element are disclosed. In an embodiment an arrangement includes a conversion element having a wavelength converting conversion material, a matrix material in which the conversion material is embedded and a substrate on which the matrix material with the embedded conversion material is directly arranged, wherein at least one condensed sol-gel material, and a laser source configured to emit primary radiation during operation, wherein the conversion element is arranged in a beam path of the laser source, wherein the conversion element is mechanically immovably mounted with respect to the laser source, and wherein the primary radiation of the laser source is dynamically arranged to the conversion element.

Abstract: An optoelectronic component and a method for producing an optoelectronic component are disclosed.

Abstract: A conversion element, an optoelectronic component, an arrangement and a method for producing a conversion element are disclosed.

Abstract: An optoelectronic component includes a semiconductor layer sequence having an active region that emits radiation during operation at least via a main radiation exit surface, and a self-supporting conversion element arranged in a beam path of the semiconductor layer sequence, wherein the self-supporting conversion element includes a substrate and a first layer, the first layer includes at least one conversion material embedded in a glass matrix, the glass matrix has a proportion of 50 to 80 vol. % in the first layer, the substrate is free of the glass matrix and the conversion material and mechanically stabilizes the first layer, and the first layer has a layer thickness of less than 200 ?m.

Abstract: A conversion element, an optoelectronic component, an arrangement and a method for producing a conversion element are disclosed.

Abstract: An optoelectronic component and a method for producing an optoelectronic component are disclosed.

Abstract: An optoelectronic component and a method for producing an optoelectronic component are disclosed. In an embodiment an optoelectronic component includes at least one laser source configured to emit at least one laser beam during operation and a self-supporting conversion element arranged in a beam path of the laser beam, wherein the self-supporting conversion element comprises a substrate followed by a first layer, the first layer being directly bonded to the substrate and comprising at least one conversion material embedded in a glass matrix, wherein the glass matrix has a proportion of 50 vol % to 80 vol % inclusive in the first layer, wherein the substrate is free of the glass matrix and of the conversion material and mechanically stabilize the first layer, and wherein the first layer has a layer thickness of less than 200 ?m.

Abstract: An optoelectronic component and a method for producing an optoelectronic component are disclosed. In an embodiment an optoelectronic component includes a semiconductor layer sequence having an active region configured to emit radiation at least via a main radiation exit surface during operation and a self-supporting conversion element arranged in a beam path of the semiconductor layer sequence, wherein the self-supporting conversion element includes a substrate and subsequently a first layer, wherein the first layer includes at least one conversion material embedded in a matrix material, wherein the matrix material includes at least one condensed sol-gel material, wherein the condensed sol-gel material has a proportion between 10 and 70 vol % in the first layer, and wherein the substrate is free of the sol-gel material and the conversion material and mechanically stabilizes the first layer.

Abstract: An optoelectronic component includes a semiconductor layer sequence having an active region that emits radiation during operation at least via a main radiation exit surface, and a self-supporting conversion element arranged in a beam path of the semiconductor layer sequence, wherein the self-supporting conversion element includes a substrate and a first layer, the first layer includes at least one conversion material embedded in a glass matrix, the glass matrix has a proportion of 50 to 80 vol. % in the first layer, the substrate is free of the glass matrix and the conversion material and mechanically stabilizes the first layer, and the first layer has a layer thickness of less than 200 ?m.

Abstract: Techniques for bonding a luminescent material to a thermally conductive substrate using a low temperature glass to provide a wavelength converter system are provided. A dichroic coating is deposited on a thermally conductive substrate. The dichroic coating includes alternating layers of a first material having a first refractive index and a second material having a second refractive index which is greater than the first refractive index. A buffer layer is deposited on the dichroic coating. A wavelength converter is bonded to the buffer layer by a layer of low temperature glass. In some embodiments, the wavelength converter includes a phosphor for converting a primary light from an excitation source into a secondary light.

Abstract: An optoelectronic semiconductor component having a light source, which emits primary radiation, a housing, and electrical terminals, wherein a conversion element, which is based on a matrix and at least two phosphors, is connected upstream of the optoelectronic semiconductor component. The matrix contains metal phosphate and preferably consists of metal phosphate. The phosphors partially or completely convert primary radiation. At least one first phosphor powder is embedded and fixed in a first inorganic matrix based on a metal phosphate, and at least one second phosphor powder is embedded and fixed in a second matrix based on a metal phosphate.

Abstract: A glass composition, a device and a method for producing the device are disclosed. In an embodiment, the glass composition includes a tellurium oxide in a proportion of at least 65 mol. % and at most 90 mol. %, R1O in a proportion between 0 mol. % and 20 mol. %, wherein R1 is selected from Mg, Ca, Sr, Ba, Zn, Mn and combinations thereof and at least one M12O in a proportion between 5 mol. % and 25 mol. %, wherein M1 is selected from Li, Na, K and combinations thereof. The glass component further includes at least one R22O3 in a proportion between 1 mol. % and 3 mol. %, wherein R2 is selected from Al, Ga, In, Bi, Sc, Y, La, rare earths and combinations thereof, and M2O2 in a proportion between 0 mol. % and 2 mol. %, wherein M2 is selected from Ti, Zr, Hf and combinations thereof.

Abstract: Various embodiments may relate to a process for producing a scattering layer for electromagnetic radiation. The process may include applying scattering centers onto a carrier, applying glass onto the scattering centers, and liquefying of the glass so that a part of the liquefied glass flows between the scattering centers toward the surface of the carrier, in such a way that a part of the liquefied glass still remains above the scattering centers.

Abstract: A conversion element, a component and a method for producing the component are disclosed. In an embodiment the conversion element includes a phosphor configured to convert electromagnetic primary radiation into electromagnetic secondary radiation and a glass composition as matrix material in which the phosphor is embedded. The glass composition has the following chemical composition: at least one tellurium oxide with a proportion of 65 mole % as a minimum and 90 mole % as a maximum, R1O with a proportion of between 0 mole % and 20 mole %, at least one M12O with a proportion of between 5 mole % and 25 mole %, at least one R22O3 with a proportion of between 1 mole % and 3 mole %, M2O2 with a proportion of between 0 mole % and 2 mole %, and R32O5 with a proportion of between 0 mole % and 6 mole %.