Patents by Inventor Angelika Schulz

Angelika Schulz has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20180127536
    Abstract: The present invention relates to a process for producing flexible polyurethane foam materials, in particular hot-moulded foams, by reaction of an isocyanate component with a component reactive to isocyanates, wherein the constituents of the component reactive to isocyanates include a polyether polyol and a polyether carbonate polyol. The invention further relates to flexible polyurethane foams produced by the process according to the invention.
    Type: Application
    Filed: April 28, 2016
    Publication date: May 10, 2018
    Inventors: Stefan Lindner, Norbert Hahn, Angelika Schulz
  • Publication number: 20150307647
    Abstract: The present invention relates to a process for producing flexible polyurethane (PUR) foams with high comfort value and low hysteresis losses produced by reacting organic polyisocyanates containing di- and polyisocyanates of the diphenylmethane (MDI) group with polyoxyalkylene polyethers.
    Type: Application
    Filed: November 18, 2013
    Publication date: October 29, 2015
    Inventors: Gundolf JACOBS, Hans-Detlef ARNTZ, Hans-Georg PIRKL, Angelika SCHULZ
  • Publication number: 20140066535
    Abstract: The present invention relates to a method for producing flexible polyurethane foams, wherein an isocyanate component (component B) is used which comprises polyether carbonate polyol, and to the isocyanate component itself. The invention also provides an NCO-terminated, urethane group-comprising prepolymer obtainable by reaction of one or more polyisocyanates (B1) with one or more polyether carbonate polyols.
    Type: Application
    Filed: March 23, 2012
    Publication date: March 6, 2014
    Applicant: Bayer Intellectual Property GmbH
    Inventors: Gundolf Jacobs, Sven Meyer-Ahrens, Bert Klesczewski, Angelika Schulz
  • Patent number: 6207494
    Abstract: A method of fabricating a trench cell capacitor can be used in the formation of a DRAM cell. In one embodiment, a trench is formed within a semiconductor substrate. The trench is lined with a dielectric layer, e.g., an ONO layer. After lining the trench, a collar is formed in an upper portion of the trench by forming an oxide layer in the upper portion. A nitride layer on the oxide layer. The trench is then filled with semiconductor material. For example, a semiconductor region can be epitaxially grown to fill the trench.
    Type: Grant
    Filed: March 31, 1999
    Date of Patent: March 27, 2001
    Assignee: Infineon Technologies Corporation
    Inventors: Christoff Graimann, Angelika Schulz, Carlos A. Mazure, Christian Dieseldorff