Patents by Inventor Angeline K. Smith

Angeline K. Smith has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Magnetic memory devices with a transition metal dopant at an interface of free magnetic layers and methods of fabrication
    Patent number: 11616192
    Abstract: A memory device includes a perpendicular magnetic tunnel junction (pMTJ) stack, between a bottom electrode and a top electrode. In an embodiment, the pMTJ includes a fixed magnet, a tunnel barrier above the fixed magnet and a free magnet structure on the tunnel barrier. The free magnet structure includes a first free magnet on the tunnel barrier and a second free magnet above the first free magnet, wherein at least a portion of the free magnet proximal to an interface with the free magnet includes a transition metal. The free magnet structure having a transition metal between the first and the second free magnets advantageously improves the switching efficiency of the MTJ, while maintaining a thermal stability of at least 50 kT.
    Type: Grant
    Filed: June 29, 2018
    Date of Patent: March 28, 2023
    Assignee: Intel Corporation
    Inventors: Tofizur Rahman, Christopher J. Wiegand, Justin S. Brockman, Daniel G. Ouellette, Angeline K. Smith, Andrew Smith, Pedro A. Quintero, Juan G. Alzate-Vinasco, Oleg Golonzka
  • MAGNETIC MEMORY DEVICES AND METHODS OF FABRICATION
    Publication number: 20200006635
    Abstract: A memory device includes a perpendicular magnetic tunnel junction (pMTJ) stack, between a bottom electrode and a top electrode. In an embodiment, the pMTJ includes a fixed magnet, a tunnel barrier above the fixed magnet and a free magnet structure on the tunnel barrier. The free magnet structure includes a first free magnet on the tunnel barrier and a second free magnet above the first free magnet, wherein at least a portion of the free magnet proximal to an interface with the free magnet includes a transition metal. The free magnet structure having a transition metal between the first and the second free magnets advantageously improves the switching efficiency of the MTJ, while maintaining a thermal stability of at least 50 kT.
    Type: Application
    Filed: June 29, 2018
    Publication date: January 2, 2020
    Applicant: Intel Corporation
    Inventors: Tofizur Rahman, Christopher J. Wiegand, Justin S. Brockman, Daniel G. Ouellette, Angeline K. Smith, Andrew Smith, Pedro A. Quintero, Juan G. Alzate-Vinasco, Oleg Golonzka