Patents by Inventor Angeline Klemm Smith

Angeline Klemm Smith has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Spin hall effect magnetic structures
    Patent number: 10302711
    Abstract: An article may include a substantially perpendicularly magnetized free layer having a first magnetic orientation in the absence of an applied magnetic field. The article may also include a spin Hall channel layer configured to conduct a spin current configured to subject the perpendicularly magnetized free layer to a magnetic switching torque and a substantially in-plane magnetized bias layer configured to bias the substantially perpendicularly magnetized free layer to a second magnetic orientation. The second magnetic orientation is different than the first magnetic orientation and is out of a plane of the substantially perpendicularly magnetized free layer.
    Type: Grant
    Filed: March 12, 2018
    Date of Patent: May 28, 2019
    Assignee: Regents of the University of Minnesota
    Inventors: Jian-Ping Wang, Angeline Klemm Smith, Mahdi Jamali, Zhengyang Zhao
  • Fast magnetoelectric device based on current-driven domain wall propagation
    Patent number: 10217522
    Abstract: In some examples, an electronic device comprising an input ferroelectric (FE) capacitor, an output FE capacitor, and a channel positioned beneath the input FE capacitor and positioned beneath the output FE capacitor. In some examples, the channel is configured to carry a magnetic signal from the input FE capacitor to the output FE capacitor to cause a voltage change at the output FE capacitor. In some examples, the electronic device further comprises a transistor-based drive circuit electrically connected to an output node of the output FE capacitor. In some examples, the transistor-based drive circuit is configured to deliver, based on the voltage change at the output FE capacitor, an output signal to an input node of a second device.
    Type: Grant
    Filed: May 22, 2017
    Date of Patent: February 26, 2019
    Assignee: Regents of the University of Minnesota
    Inventors: Jian-Ping Wang, Mahdi Jamali, Sachin S. Sapatnekar, Meghna G. Mankalale, Zhaoxin Liang, Angeline Klemm Smith, Mahendra DC, Hyung-il Kim, Zhengyang Zhao
  • SPIN HALL EFFECT MAGNETIC STRUCTURES
    Publication number: 20180203077
    Abstract: An article may include a substantially perpendicularly magnetized free layer having a first magnetic orientation in the absence of an applied magnetic field. The article may also include a spin Hall channel layer configured to conduct a spin current configured to subject the perpendicularly magnetized free layer to a magnetic switching torque and a substantially in-plane magnetized bias layer configured to bias the substantially perpendicularly magnetized free layer to a second magnetic orientation. The second magnetic orientation is different than the first magnetic orientation and is out of a plane of the substantially perpendicularly magnetized free layer.
    Type: Application
    Filed: March 12, 2018
    Publication date: July 19, 2018
    Inventors: Jian-Ping Wang, Angeline Klemm Smith, Mahdi Jamali, Zhengyang Zhao
  • FAST MAGNETOELECTRIC DEVICE BASED ON CURRENT-DRIVEN DOMAIN WALL PROPAGATION
    Publication number: 20170337983
    Abstract: In some examples, an electronic device comprising an input ferroelectric (FE) capacitor, an output FE capacitor, and a channel positioned beneath the input FE capacitor and positioned beneath the output FE capacitor. In some examples, the channel is configured to carry a magnetic signal from the input FE capacitor to the output FE capacitor to cause a voltage change at the output FE capacitor. In some examples, the electronic device further comprises a transistor-based drive circuit electrically connected to an output node of the output FE capacitor. In some examples, the transistor-based drive circuit is configured to deliver, based on the voltage change at the output FE capacitor, an output signal to an input node of a second device.
    Type: Application
    Filed: May 22, 2017
    Publication date: November 23, 2017
    Inventors: Jian-Ping Wang, Mahdi Jamali, Sachin S. Sapatnekar, Meghna G. Mankalale, Zhaoxin Liang, Angeline Klemm Smith, Mahendra DC, Hyung-il Kim, Zhengyang Zhao
  • SPIN HALL EFFECT MAGNETIC STRUCTURES
    Publication number: 20170082697
    Abstract: An article may include a substantially perpendicularly magnetized free layer having a first magnetic orientation in the absence of an applied magnetic field. The article may also include a spin Hall channel layer configured to conduct a spin current configured to subject the perpendicularly magnetized free layer to a magnetic switching torque and a substantially in-plane magnetized bias layer configured to bias the substantially perpendicularly magnetized free layer to a second magnetic orientation. The second magnetic orientation is different than the first magnetic orientation and is out of a plane of the substantially perpendicularly magnetized free layer.
    Type: Application
    Filed: November 19, 2015
    Publication date: March 23, 2017
    Inventors: Jian-Ping Wang, Angeline Klemm Smith, Mahdi Jamali, Zhengyang Zhao