Patents by Inventor Angeline SMITH

Angeline SMITH has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200105324
    Abstract: A magnetic tunnel junction (MTJ) for use in a magnetic spin orbit torque random access memory device (SOT MRAM) is described. Magnetic tunnel junctions described herein include a multi-magnet free layer over a spin orbit torque electrode. The multi-magnet free layer includes at least three sub-layers: a first magnetic sub-layer in direct contact with the SOT electrode having a first magnetic stability, a second magnetic sub-layer having a second magnetic stability greater than the first magnetic stability, and a magnetic coupling layer between the first and second sub-layers.
    Type: Application
    Filed: September 27, 2018
    Publication date: April 2, 2020
    Applicant: INTEL CORPORATION
    Inventors: Angeline Smith, Sasikanth Manipatruni, MD Tofizur Rahman, Noriyuki Sato, Tanay Gasovi, Christopher Wiegand, Ian Young
  • Publication number: 20200105998
    Abstract: A perpendicular spin orbit torque (SOT) memory device includes an electrode having a spin orbit coupling material and a perpendicular magnetic tunnel junction (pMTJ) device on a portion of the electrode. The pMTJ device includes a free magnet, a fixed magnet and a tunnel barrier layer in between, where at least one of the fixed magnet or the free magnet includes two magnetic layers and a spacer layer comprising tungsten in between.
    Type: Application
    Filed: September 27, 2018
    Publication date: April 2, 2020
    Applicant: Intel Corporation
    Inventors: Angeline SMITH, Sasikanth MANIPATRUNI, Christopher WIEGAND, Tofizur RAHMAN, Noriyuki SATO, Benjamin BUFORD
  • Publication number: 20200006626
    Abstract: An insertion layer for perpendicular spin orbit torque (SOT) memory devices between the SOT electrode and the free magnetic layer, memory devices and computing platforms employing such insertion layers, and methods for forming them are discussed. The insertion layer is predominantly tungsten and improves thermal stability and perpendicular magnetic anisotropy in the free magnetic layer.
    Type: Application
    Filed: June 28, 2018
    Publication date: January 2, 2020
    Applicant: Intel Corporation
    Inventors: Angeline Smith, Ian Young, Kaan Oguz, Sasikanth Manipatruni, Christopher Wiegand, Kevin O'Brien, Tofizur Rahman, Noriyuki Sato, Benjamin Buford, Tanay Gosavi
  • Publication number: 20200006630
    Abstract: A spin orbit torque (SOT) memory device includes a SOT electrode having a spin orbit coupling material. The SOT electrode has a first sidewall and a second sidewall opposite to the first sidewall. The SOT memory device further includes a magnetic tunnel junction device on a portion of the SOT electrode. A first MTJ sidewall intersects the first SOT sidewall and a portion of the first MTJ sidewall and the SOT sidewall has a continuous first slope. The MTJ device has a second sidewall that does not extend beyond the second SOT sidewall and at least a portion of the second MTJ sidewall has a second slope.
    Type: Application
    Filed: June 29, 2018
    Publication date: January 2, 2020
    Applicant: Intel Corporation
    Inventors: Noriyuki Sato, Tanay Gosavi, Gary Allen, Sasikanth Manipatruni, Kaan Oguz, Kevin O'Brien, Christopher Wiegand, Angeline Smith, Tofizur Rahman, Ian Young, Ben Buford
  • Publication number: 20200006632
    Abstract: A memory device includes a bottom electrode, a conductive layer such as an alloy including ruthenium and tungsten above the bottom electrode and a perpendicular magnetic tunnel junction (pMTJ) on the conductive layer. In an embodiment, the pMTJ includes a fixed magnet, a tunnel barrier above the fixed magnet and a free magnet on the tunnel barrier. The memory device further includes a synthetic antiferromagnetic (SAF) structure that is ferromagnetically coupled with the fixed magnet to pin a magnetization of the fixed magnet. The conductive layer has a crystal texture which promotes high quality FCC <111> crystal texture in the SAF structure and improves perpendicular magnetic anisotropy of the fixed magnet.
    Type: Application
    Filed: June 29, 2018
    Publication date: January 2, 2020
    Applicant: Intel Corporation
    Inventors: Daniel Ouellette, Justin Brockman, Tofizur Rahman, Angeline Smith, Andrew Smith, Christopher Wiegand, Oleg Golonzka
  • Publication number: 20200006424
    Abstract: A spin orbit torque (SOT) memory device includes a magnetic tunnel junction (MTJ) device with one end coupled with a first electrode and an opposite end coupled with a second electrode including a spin orbit torque material. In an embodiment, a second electrode is coupled with the free magnet and coupled between a pair of interconnect line segments. The second electrode and the pair of interconnect line segments include a spin orbit torque material. The second electrode has a conductive path cross-section that is smaller than a cross section of the conductive path in at least one of the interconnect line segments.
    Type: Application
    Filed: June 28, 2018
    Publication date: January 2, 2020
    Applicant: Intel Corporation
    Inventors: Noriyuki Sato, Angeline Smith, Tanay Gosavi, Sasikanth Manipatruni, Kaan Oguz, Kevin O'Brien, Tofizur Rahman, Gary Allen, Atm G. Sarwar, Ian Young, Hui Jae Yoo, Christopher Weigand, Benjamin Buford
  • Publication number: 20200006637
    Abstract: Embodiments herein relate to a system, apparatus, and/or process for producing a spin orbit torque (SOT) electrode that includes a first layer with a first side to couple with a free layer of a magnetic tunnel junction (MTJ) and a second layer coupled with a second side of the first layer opposite the first side, where a value of an electrical resistance in the first SOT layer is lower than a value of an electrical resistance in the second SOT layer and where a current applied to the SOT electrode is to cause current to preferentially flow in the first SOT layer to cause a magnetic polarization of the free layer to change directions. During production of the SOT electrode, the second layer may act as an etch stop.
    Type: Application
    Filed: June 29, 2018
    Publication date: January 2, 2020
    Inventors: Tanay GOSAVI, Sasikanth MANIPATRUNI, Chia-Ching LIN, Kaan OGUZ, Christopher WIEGAND, Angeline SMITH, Noriyuki SATO, Kevin O'BRIEN, Benjamin BUFORD, Ian YOUNG, MD Tofizur RAHMAN
  • Publication number: 20200006631
    Abstract: A perpendicular spin orbit torque (SOT) memory device includes an electrode having a spin orbit coupling material and a magnetic tunnel junction (MTJ) device on a portion of the electrode. The electrode has a first SOC layer and a second SOC layer on a portion of the first SOC layer, where at least a portion of the first SOC layer at an interface with the second SOC layer includes oxygen.
    Type: Application
    Filed: June 29, 2018
    Publication date: January 2, 2020
    Applicant: Intel Corporation
    Inventors: Noriyuki Sato, Tanay Gosavi, Justin Brockman, Sasikanth Manipatruni, Kaan Oguz, Kevin O'Brien, Christopher Wiegand, Angeline Smith, Tofizur Rahman, Ian Young
  • Publication number: 20200006634
    Abstract: A memory device method of fabrication that includes a first electrode having a first conductive layer including titanium and nitrogen and a second conductive layer on the first conductive layer that includes tantalum and nitrogen. The memory device further includes a magnetic tunnel junction (MTJ) on the first electrode. In some embodiments, at least a portion of the first conductive layer proximal to an interface with the second conductive layer includes oxygen.
    Type: Application
    Filed: June 29, 2018
    Publication date: January 2, 2020
    Applicant: Intel Corporation
    Inventors: Justin Brockman, Conor Puls, Stephen Wu, Christopher Wiegand, Tofizur Rahman, Daniel Ouellette, Angeline Smith, Andrew Smith, Pedro Quintero, Juan Alzate-Vinasco, Oleg Golonzka
  • Publication number: 20190386209
    Abstract: Material stacks for perpendicular spin transfer torque memory (pSTTM) devices, pSTTM devices and computing platforms employing such material stacks, and methods for forming them are discussed. The material stacks include a cladding layer of predominantly tungsten on a protective layer, which is in turn on an oxide capping layer over a magnetic junction stack. The cladding layer reduces oxygen dissociation from the oxide capping layer for improved thermal stability and retention.
    Type: Application
    Filed: June 15, 2018
    Publication date: December 19, 2019
    Applicant: Intel Corporation
    Inventors: Angeline Smith, Justin Brockman, Tofizur Rahman, Daniel Ouellette, Andrew Smith, Juan Alzate Vinasco, James ODonnell, Christopher Wiegand, Oleg Golonzka
  • Publication number: 20190386205
    Abstract: An apparatus is provided which comprises: a magnetic junction including: a first structure comprising a magnet with an unfixed perpendicular magnetic anisotropy (PMA) relative to an x-y plane of a device; a second structure comprising one of a dielectric or metal; a third structure comprising a magnet with fixed PMA, wherein the third structure has an anisotropy axis perpendicular to the plane of the device, and wherein the third structure is adjacent to the second structure such that the second structure is between the first and third structures; a fourth structure comprising an antiferromagnetic (AFM) material, the fourth structure adjacent to the third structure; a fifth structure comprising a magnet with PMA, the fifth structure adjacent to the fourth structure; and an interconnect adjacent to the first structure, the interconnect comprising spin orbit material.
    Type: Application
    Filed: June 19, 2018
    Publication date: December 19, 2019
    Applicant: Intel Corporation
    Inventors: Tanay Gosavi, Sasikanth Manipatruni, Kaan Oguz, Noriyuki Sato, Kevin O'Brien, Benjamin Buford, Christopher Wiegand, Angeline Smith, Tofizur Rahman, Ian Young
  • Publication number: 20190280188
    Abstract: An apparatus comprises a magnetic tunnel junction (MTJ) including a free magnetic layer, a fixed magnetic layer, and a tunnel barrier between the free and fixed layers, the tunnel barrier directly contacting a first side of the free layer, a capping layer contacting the second side of the free magnetic layer and boron absorption layer positioned a fixed distance above the capping layer.
    Type: Application
    Filed: December 28, 2016
    Publication date: September 12, 2019
    Inventors: Justin BROCKMAN, Christopher WIEGAND, MD Tofizur RAHMAN, Daniel OUELETTE, Angeline SMITH, Juan ALZATE VINASCO, Charles KUO, Mark DOCZY, Kaan OGUZ, Kevin O'BRIEN, Brian DOYLE, Oleg GOLONZKA, Tahir GHANI