Abstract: A method for the dry removal of a material on a microelectronic workpiece is described. The method includes receiving a workpiece having a surface exposing a target layer composed of silicon and either (1) organic material or (2) both oxygen and nitrogen, and selectively removing at least a portion of the target layer from the workpiece. The selective removal includes exposing the surface of the workpiece to a chemical environment containing N, H, and F at a first setpoint temperature to chemically alter a surface region of the target layer, and then, elevating the temperature of the workpiece to a second setpoint temperature to remove the chemically treated surface region of the target layer.

Abstract: An additional non-photoresist layer may be formed on patterned photoresist layers. The additional layer may be preferentially formed on the tops of the photoresist layer versus the sidewalls of the photoresist layer. In addition, the additional layer may be preferential formed on the tops of the photoresist layer versus exposed surfaces of layers underlying the photoresist layer. In this manner, the patterned structures formed by the photoresist layer are less likely to have line opens due to photoresist height variability or the relative thinness of the photoresist height used. Further, the formation of the additional layer may be through a cyclic deposition/trim process. The trim step of the cyclic process may also serve as a descum step that helps reduce line bridging and scumming. In one embodiment, the additional non-photoresist layer may be an organic polymer layer.

Abstract: A method and system for the dry removal of a material on a microelectronic workpiece are described. The method includes receiving a workpiece having a surface exposing a target layer to be at least partially removed, placing the workpiece on a workpiece holder in a dry, non-plasma etch chamber, and selectively removing at least a portion of the target layer from the workpiece. The selective removal includes operating the dry, non-plasma etch chamber to perform the following: exposing the surface of the workpiece to a chemical environment at a first setpoint temperature in the range of 35 degrees C. to 100 degrees C. to chemically alter a surface region of the target layer, and then, elevating the temperature of the workpiece to a second setpoint temperature at or above 100 degrees C. to remove the chemically treated surface region of the target layer.

Abstract: A process flow is utilized for patterning of dual damascene structures in BEOL process steps. Conductor vias are inversely patterned in the form of pillars that are formed before the final dielectric stack is deposited. The final dielectric stack may include a low-k dielectric and the conductor may be ruthenium. The vias may be formed by forming conductor pillars in patterned voids of a sacrificial layer. After the pillars are formed, certain areas between the pillars can then be backfilled with a dielectric, such as for example, a low-k dielectric material. The trench conductor of the dual damascene structure may then be formed. The sacrificial dielectric may then be removed and an additional layer of low-k dielectric material can then be deposited or coated on the structure to provide the final structure having the dual damascene vias and trenches filled with the conductor surrounded by low-k material.

Abstract: An additional non-photoresist layer may be formed on patterned photoresist layers. The additional layer may be preferentially formed on the tops of the photoresist layer versus the sidewalls of the photoresist layer. In addition, the additional layer may be preferential formed on the tops of the photoresist layer versus exposed surfaces of layers underlying the photoresist layer. In this manner, the patterned structures formed by the photoresist layer are less likely to have line opens due to photoresist height variability or the relative thinness of the photoresist height used. Further, the formation of the additional layer may be through a cyclic deposition/trim process. The trim step of the cyclic process may also serve as a descum step that helps reduce line bridging and scumming. In one embodiment, the additional non-photoresist layer may be an organic polymer layer.

Abstract: A method for the dry removal of a material on a microelectronic workpiece is described. The method includes receiving a workpiece having a surface exposing a target layer composed of silicon and either (1) organic material or (2) both oxygen and nitrogen, and selectively removing at least a portion of the target layer from the workpiece. The selective removal includes exposing the surface of the workpiece to a chemical environment containing N, H, and F at a first setpoint temperature to chemically alter a surface region of the target layer, and then, elevating the temperature of the workpiece to a second setpoint temperature to remove the chemically treated surface region of the target layer.

Abstract: A method for the dry removal of a material on a microelectronic workpiece is described. The method includes receiving a workpiece having a surface exposing a target layer composed of silicon and either (1) organic material or (2) both oxygen and nitrogen, and selectively removing at least a portion of the target layer from the workpiece. The selective removal includes exposing the surface of the workpiece to a chemical environment containing N, H, and F at a first setpoint temperature to chemically alter a surface region of the target layer, and then, elevating the temperature of the workpiece to a second setpoint temperature to remove the chemically treated surface region of the target layer.

Abstract: A substrate processing technique is described herein for etching layers, such as dielectric layers, and more particularly low k dielectric layers in a manner that minimizes etch lag effects. Multiple etch processes are utilized. A first etch process may exhibit etch lag. A second etch process is a multi-step process that may include a deposition sub-step, a purge sub-step and an etch sub-step. The second etch process may exhibit inverse etch lag. The second etch process may be a cyclic process which performs the deposition, purge and etch sub-steps a plurality of times. The second etch process may be an atomic layer etch based process, and more particularly a quasi-atomic layer etch. The combination of the first etch process and the second etch process may provide the desired net effect for the overall etch lag when etching the dielectric layer.

Abstract: A process flow is utilized for patterning of dual damascene structures in BEOL process steps. Conductor vias are inversely patterned in the form of pillars that are formed before the final dielectric stack is deposited. The final dielectric stack may include a low-k dielectric and the conductor may be ruthenium. The vias may be formed by forming conductor pillars in patterned voids of a sacrificial layer. After the pillars are formed, certain areas between the pillars can then be backfilled with a dielectric, such as for example, a low-k dielectric material. The trench conductor of the dual damascene structure may then be formed. The sacrificial dielectric may then be removed and an additional layer of low-k dielectric material can then be deposited or coated on the structure to provide the final structure having the dual damascene vias and trenches filled with the conductor surrounded by low-k material.

Abstract: A method and system for the dry removal of a material on a microelectronic workpiece are described. The method includes receiving a workpiece having a surface exposing a target layer to be at least partially removed, placing the workpiece on a workpiece holder in a dry, non-plasma etch chamber, and selectively removing at least a portion of the target layer from the workpiece. The selective removal includes operating the dry, non-plasma etch chamber to perform the following: exposing the surface of the workpiece to a chemical environment at a first setpoint temperature in the range of 35 degrees C. to 100 degrees C. to chemically alter a surface region of the target layer, and then, elevating the temperature of the workpiece to a second setpoint temperature at or above 100 degrees C. to remove the chemically treated surface region of the target layer.

Abstract: A method and system for the dry removal of a material on a microelectronic workpiece are described. The method includes receiving a workpiece having a surface exposing a target layer to be at least partially removed, placing the workpiece on a workpiece holder in a dry, non-plasma etch chamber, and selectively removing at least a portion of the target layer from the workpiece. The selective removal includes operating the dry, non-plasma etch chamber to perform the following: exposing the surface of the workpiece to a chemical environment at a first setpoint temperature in the range of 35 degrees C. to 100 degrees C. to chemically alter a surface region of the target layer, and then, elevating the temperature of the workpiece to a second setpoint temperature at or above 100 degrees C. to remove the chemically treated surface region of the target layer.

Abstract: A substrate is provided with a patterned layer over a stack of one or more processing layers. The processing layers include at least one trim layer and at least one masking layer under the trim layer. The trim layer may have structures that have smaller linewidths than the structures of the patterned layer by utilizing an isotropic gaseous process to trim the structures of the trim layer. The structures of the trim layer, after trimming, may then be replicated in the mask layer to provide a linewidth in the mask layer that is smaller than the linewidth in the patterned layer. The technique may allow nanometer control of an EUV lithography process at pitches of 36 nm or less. In one embodiment, the technique may be utilized to provide an EUV lithography process for increasing the trench dimensions in a BEOL trench formation process step.

Abstract: A substrate processing technique is described herein for etching layers, such as dielectric layers, and more particularly low k dielectric layers in a manner that minimizes etch lag effects. Multiple etch processes are utilized. A first etch process may exhibit etch lag. A second etch process is a multi-step process that may include a deposition sub-step, a purge sub-step and an etch sub-step. The second etch process may exhibit inverse etch lag. The second etch process may be a cyclic process which performs the deposition, purge and etch sub-steps a plurality of times. The second etch process may be an atomic layer etch based process, and more particularly a quasi-atomic layer etch. The combination of the first etch process and the second etch process may provide the desired net effect for the overall etch lag when etching the dielectric layer.

Abstract: A substrate is provided with a patterned layer over a stack of one or more processing layers. The processing layers include at least one trim layer and at least one masking layer under the trim layer. The trim layer may have structures that have smaller linewidths than the structures of the patterned layer by utilizing an isotropic gaseous process to trim the structures of the trim layer. The structures of the trim layer, after trimming, may then be replicated in the mask layer to provide a linewidth in the mask layer that is smaller than the linewidth in the patterned layer. The technique may allow nanometer control of an EUV lithography process at pitches of 36 nm or less. In one embodiment, the technique may be utilized to provide an EUV lithography process for increasing the trench dimensions in a BEOL trench formation process step.

Abstract: A method to implement self-aligned triple patterning techniques for the processing of substrates is provided. In one embodiment, a self-aligned triple processing technique utilizing an organic spacer is provided. The organic spacer may be formed utilizing any of a wide range of techniques including, but not limited to, plasma deposition and spin on deposition. In one embodiment, the organic spacer may be formed via a cyclic deposition etch process. In one embodiment, the self-aligned triple patterning technique may be utilized to form patterned structures on a substrate at pitches of 26 nm or less.

Abstract: An additional non-photoresist layer may be formed on patterned photoresist layers. The additional layer may be preferentially formed on the tops of the photoresist layer versus the sidewalls of the photoresist layer. In addition, the additional layer may be preferential formed on the tops of the photoresist layer versus exposed surfaces of layers underlying the photoresist layer. In this manner, the patterned structures formed by the photoresist layer are less likely to have line opens due to photoresist height variability or the relative thinness of the photoresist height used. Further, the formation of the additional layer may be through a cyclic deposition/trim process. The trim step of the cyclic process may also serve as a descum step that helps reduce line bridging and scumming. In one embodiment, the additional non-photoresist layer may be an organic polymer layer.

Abstract: Provided is a method for increasing pattern density of a structure using an integration scheme and perform pitch splitting at the resist level without the use of hard mandrels, the method comprising: providing a substrate having a patterned resist layer and an underlying layer comprising a silicon anti-reflective coating layer, an amorphous layer, and a target layer; performing a resist hardening process; performing a first conformal spacer deposition using an atomic layer deposition technique with an oxide, performing a spacer first reactive ion etch process and a first pull process on the first conformal layer, performing a second conformal spacer deposition using titanium oxide; performing a second spacer RIE process and a second pull process, generating a second spacer pattern; and transferring the second spacer pattern into the target layer, wherein targets include patterning uniformity, pulldown of structures, slimming of structures, aspect ratio of structures, and line width roughness.

Abstract: Provided is a method for increasing pattern density of a structure on a substrate using an integration scheme, the method comprising: providing a substrate having a first spacer pattern and an underlying layer, the underlying layer comprising a first underlying layer, a second underlying layer, and a target layer; performing a conformal spacer deposition using an oxide, the deposition creating a conformal layer; performing a spacer RIE process and a pull process, thereby generating a second spacer pattern, the spacer RIE process includes adsorption of N-containing gas on a surface of the substrate which activates the surface to react with an F- and/or an H-containing gas to form fluorosilicates; and wherein the integration targets include selectively etching spacer films within a target spacer etch rate, enhanced simultaneous selectivity to the first underlying layer and the second underlying layer and preventing pattern damage.

Abstract: Provided is a method for increasing pattern density of a structure on a substrate using an integration scheme, the method comprising: providing a substrate having a first spacer pattern and an underlying layer, the underlying layer comprising a first underlying layer, a second underlying layer, and a target layer; performing a second conformal spacer deposition using an oxide, the deposition creating a second conformal layer; performing a second spacer RIE process and a second pull process, wherein generating a second spacer pattern, the second spacer RIE process includes adsorption of N containing gas on a surface of the substrate which activates the surface to react with an F and/or an H-containing gas to form fluorosilicates; and wherein the integration targets include selectively etching spacer films within a target spacer etch rate, enhanced simultaneous selectivity to the first underlying layer and the second underlying layer and preventing pattern damage.

Abstract: A method and system for the dry removal of a material on a microelectronic workpiece are described. The method includes receiving a workpiece having a surface exposing a target layer to be at least partially removed, placing the workpiece on a workpiece holder in a dry, non-plasma etch chamber, and selectively removing at least a portion of the target layer from the workpiece. The selective removal includes operating the dry, non-plasma etch chamber to perform the following: exposing the surface of the workpiece to a chemical environment at a first setpoint temperature in the range of 35 degrees C. to 100 degrees C. to chemically alter a surface region of the target layer, and then, elevating the temperature of the workpiece to a second setpoint temperature at or above 100 degrees C. to remove the chemically treated surface region of the target layer.