Abstract: This disclosure provides a semiconductor sensor of ionizing radiation and/or ionizing particles with a backside bias electrode and a backside junction for completely depleting the semiconductor substrate up to carrier collection regions each connected to a respective collection electrode of carriers generated by ionization in the substrate. Differently from prior sensors, the sensor of this disclosure has an intermediate semiconductor layer formed upon the substrate, having a greater doping concentration than the doping concentration of the substrate and a doping of a same type. In this intermediate layer, buried doped regions of opposite type one separated from the other are formed for shielding superficial regions in which readout circuits are defined.

Abstract: This disclosure provides a semiconductor sensor of ionizing radiation and/or ionizing particles with a backside bias electrode and a backside junction for completely depleting the semiconductor substrate up to carrier collection regions each connected to a respective collection electrode of carriers generated by ionization in the substrate. Differently from prior sensors, the sensor of this disclosure has an intermediate semiconductor layer formed upon the substrate, having a greater doping concentration than the doping concentration of the substrate and a doping of a same type. In this intermediate layer, buried doped regions of opposite type one separated from the other are formed for shielding superficial regions in which readout circuits are defined.

Abstract: This invention is about a readout apparatus and method for time-of-flight and energy measurements with silicon photomultipliers (SIPM) coupled to a scintillator. The timing measurement can be as accurate as 50 ps or below, after calibration. The energy is measured using a time-over-threshold technique, and the energy resolution is only constrained by the scintillation statistics. In order to achieve low power of 10 mW per channel, a low impedance input amplifier and analog time-to-digital converters (TDCs) based on time interpolation are used. The readout circuit can be triggered by a single photoelectron (p.e.) with a signal-to-noise ratio (SNR) above 20 dB. The said readout circuit operates with SiPMs of different gain, polarity and matrix size. The preferred embodiment of the readout apparatus is a multi-channel application specific integrated circuit (ASIC) with 64 channels.

Abstract: This invention is about a readout apparatus and method for time-of-flight and energy measurements with silicon photomultipliers (SIPM) coupled to a scintillator. The timing measurement can be as accurate as 50 ps or below, after calibration. The energy is measured using a time-over-threshold technique, and the energy resolution is only constrained by the scintillation statistics. In order to achieve low power of 10 mW per channel, a low impedance input amplifier and analogue time-to-digital converters (TDCs) based on time interpolation are used. The readout circuit can be triggered by a single photoelectron (p.c.) with a signal-to-noise ratio (SNR) above 20 dB. The said readout circuit operates with SiPMs of different gain, polarity and matrix size. The preferred embodiment of the readout apparatus is a multi-channel application specific integrated circuit (ASIC) with 64 channels.