Patents by Inventor Anging Zhang

Anging Zhang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Dual-layer deep ultraviolet photoresist process and structure
    Patent number: 6797456
    Abstract: A method for forming a photoresist structure that does not have swelling defects. A layer of low activation energy deep ultraviolet photoresist is disposed over a layer that is to be patterned. A layer of high activation energy deep ultraviolet photoresist is then deposited such that the layer of high activation energy photoresist directly overlies the layer of low activation energy photoresist. The two photoresist layers are then processed by performing exposure, post-exposure bake, and development steps to form a photoresist structure. An etch step is then performed so as to form a patterned layer that does not have swelling defects.
    Type: Grant
    Filed: August 1, 2002
    Date of Patent: September 28, 2004
    Assignee: Integrated Device Technology, Inc.
    Inventors: Yiming Gu, John L. Sturtevant, Anging Zhang