Abstract: A method analyzes an operation of a power semiconductor device. The method includes: providing a set of reference voltages of the device and a set of corresponding reference currents; measuring, within a predetermined time-interval, Nframe on-state voltages and Nframe corresponding on-state currents of the device to obtain Nframe measurement points, Nframe being an integer number equal to or greater than 2; adapting the set of reference voltages by carrying out a least squares fit to the Nframe measurement points; and using the adapted set of reference voltages to analyze the operation of the power semiconductor device.

Abstract: A modular switching cell of a high voltage direct current power converter has a modular switching cell that includes a base module, which has: a first switching unit; a second switching unit; a first capacitor; and a second capacitor. The first switching unit, the second switching unit, the first capacitor, and the second capacitor are mounted on a chassis. The base module is configured to receive at least three different busbar sets, each of the busbar sets having a plurality of busbars for interconnecting the first switching unit, the second switching unit, the first capacitor, and the second capacitor to form one of: two parallel half bridge circuits between a first cell terminal and a second cell terminal; two serial half bridge circuits between the first cell terminal and the second cell terminal; or a full bridge circuit between the first cell terminal and the second cell terminal.

Abstract: The invention regards a modular switching cell of a high voltage direct current power converter, comprising a base module (18) with a first switching unit (2), a second switching unit (3), a first capacitor (4), and a second capacitor (5), wherein the first switching unit (2), the second switching unit (3), the first capacitor (4), and the second capacitor (5) are mounted on a chassis (15), characterized in that the base module (18) is adapted to receive at least three different busbar sets, each including a plurality of busbars for interconnecting the first switching unit (2), the second switching unit (3), the first capacitor (4), and the second capacitor (5) to form one of two parallel half bridge circuits between a first cell terminal and a second cell terminal, and two serial half bridge circuits between the first cell terminal and the second cell terminal (200), and a full bridge circuit between the first cell terminal and the second cell terminal.

Abstract: A method analyzes an operating condition of a power converter. The method includes: providing a sample clock signal; determining repeatedly at least one operating parameter of a power semiconductor device of the power converter; and determining the operating condition of the power converter depending on the at least one determined operating parameter. The repetitions of the determining the at least one operating parameter are synchronous to the sample clock signal. For a given repetition of the determination of the at least one operating parameter, determining the at least one operating parameter includes measuring the at least one operating parameter or identifying a value for the at least one operating parameter from a previous repetition depending on a switching behavior of the power converter within the given repetition.

Abstract: A method analyzes an operation of a power semiconductor device. The method includes: providing a set of reference voltages of the device and a set of corresponding reference currents; measuring, within a predetermined time-interval, Nframe on-state voltages and Nframe corresponding on-state currents of the device to obtain Nframe measurement points, Nframe being an integer number equal to or greater than 2; adapting the set of reference voltages by carrying out a least squares fit to the Nframe measurement points; and using the adapted set of reference voltages to analyze the operation of the power semiconductor device.

Abstract: A method determines a characteristic temperature of an electric or electronic system. The method includes: during operation of the system, measuring one or more characteristic parameters of the system; estimating the characteristic temperature based on a thermal model of the system and a first subset of the measured characteristic parameters; predicting a first value for a temperature-sensitive electrical parameter (TSEP) based on a TSEP model and the estimated characteristic temperature; determining a second value for the TSEP based on a second subset of the measured characteristic parameters; comparing the first value and the second value for the TSEP; and adapting the thermal model or the TSEP model based on a result of the comparison.

Abstract: A method analyzes an operation of a power semiconductor device. The method includes: providing a set of reference voltages of the power semiconductor device and a set of corresponding reference currents; measuring an on-state voltage and a corresponding on-state current of the power semiconductor device to obtain a measurement point; adapting the set of reference voltages by adapting two of the set of reference voltages lying closest to the measurement point by extrapolating the measurement point; and using the adapted set of reference voltages to analyze the operation of the power semiconductor device. The extrapolation is based on a predefined reference increment current and a predefined reference increment voltage.

Abstract: A method analyzes an operating condition of a power converter. The method includes: providing a sample clock signal; determining repeatedly at least one operating parameter of a power semiconductor device of the power converter; and determining the operating condition of the power converter depending on the at least one determined operating parameter. The repetitions of the determining the at least one operating parameter are synchronous to the sample clock signal. For a given repetition of the determination of the at least one operating parameter, determining the at least one operating parameter includes measuring the at least one operating parameter or identifying a value for the at least one operating parameter from a previous repetition depending on a switching behavior of the power converter within the given repetition.

Abstract: A method analyzes an operation of a power semiconductor device. The method includes: providing a set of reference voltages of the power semiconductor device and a set of corresponding reference currents; measuring an on-state voltage and a corresponding on-state current of the power semiconductor device to obtain a measurement point; adapting the set of reference voltages by adapting two of the set of reference voltages lying closest to the measurement point by extrapolating the measurement point; and using the adapted set of reference voltages to analyze the operation of the power semiconductor device. The extrapolation is based on a predefined reference increment current and a predefined reference increment voltage.

Abstract: A method determines a characteristic temperature of an electric or electronic system. The method includes: during operation of the system, measuring one or more characteristic parameters of the system; estimating the characteristic temperature based on a thermal model of the system and a first subset of the measured characteristic parameters; predicting a first value for a temperature-sensitive electrical parameter (TSEP) based on a TSEP model and the estimated characteristic temperature; determining a second value for the TSEP based on a second subset of the measured characteristic parameters; comparing the first value and the second value for the TSEP; and adapting the thermal model or the TSEP model based on a result of the comparison.

Abstract: A power circuit has a power switching device (PSD) to, when in an ON state, conduct current from its first to second terminal; a diode anti-parallel to the PSD that, when in a non-blocking state, conducts current from its anode to its cathode; a drive input line coupled to a device control terminal of the PSD to control its switching; and sense circuitry, having a temperature sensitive current source (TSCS) coupled to a conduction terminal, providing a sense signal from the TSCS to the drive input line to indicate temperature. The TSCS is thermally coupled to the PSD, the temperature indicated is of the PSD, and the conduction terminal is the first or second terminal of the PSD; and/or the TSCS is thermally coupled to the diode, the temperature indicated by the sense signal is of the diode, and the conduction terminal is the anode or cathode of the diode.

Abstract: A power circuit has a power switching device (PSD) to, when in an ON state, conduct current from its first to second terminal; a diode anti-parallel to the PSD that, when in a non-blocking state, conducts current from its anode to its cathode; a drive input line coupled to a device control terminal of the PSD to control its switching; and sense circuitry, having a temperature sensitive current source (TSCS) coupled to a conduction terminal, providing a sense signal from the TSCS to the drive input line to indicate temperature. The TSCS is thermally coupled to the PSD, the temperature indicated is of the PSD, and the conduction terminal is the first or second terminal of the PSD; and/or the TSCS is thermally coupled to the diode, the temperature indicated by the sense signal is of the diode, and the conduction terminal is the anode or cathode of the diode.

Abstract: The present invention generally relates to a switching cell for a phase leg of a power converter and a method of controlling a power converter to drive a load, and more particularly to a plurality of such switching cells, a phase arm for a power converter, a power converter phase leg, to a power converter for driving a load, and methods of making a power converter.

Abstract: The present invention generally relates to a switching cell for a phase leg of a power converter and a method of controlling a power converter to drive a load, and more particularly to a plurality of such switching cells, a phase arm for a power converter, a power converter phase leg, to a power converter for driving a load, and methods of making a power converter.

Abstract: The present invention relates generally to power switches for aircraft. According to a first aspect, the present invention provides an integrated solid state power switch for fault protection in an aircraft power distribution system. The integrated solid state power switch is formed of semiconductor material that provides a field effect transistor (FET) channel that is operable during normal device operation to provide an operating current flow path and a bipolar transistor channel that is operable during device overload conditions to provide an overload current flow path. A method for manufacturing such an integrated solid state power switch is also described. Various embodiments of the invention provide automatic overload current protection for aircraft systems without the need to use bulky switches or heavy cooling equipment.

Abstract: The present invention relates generally to power switches for aircraft. According to a first aspect, the present invention provides an integrated solid state power switch for fault protection in an aircraft power distribution system. The integrated solid state power switch is formed of semiconductor material that provides a field effect transistor (FET) channel that is operable during normal device operation to provide an operating current flow path and a bipolar transistor channel that is operable during device overload conditions to provide an overload current flow path. A method for manufacturing such an integrated solid state power switch is also described. Various embodiments of the invention provide automatic overload current protection for aircraft systems without the need to use bulky switches or heavy cooling equipment.