Abstract: A method and structure for a piezoelectric ink jet printhead. The method can include forming a piezoelectric composite from a liquid sol-gel solution. A first layer of the liquid sol-gel solution can be deposited onto a substrate using, for example, a spin coat process, wherein the substrate may be a printhead diaphragm. The first layer may be partially cured, then a second layer of the liquid sol-gel solution can be deposited onto the partially cured first layer, which is then partially cured. Any number of layers of liquid sol-gel solution can be deposited to result in a piezoelectric composite having a suitable thickness. Subsequently, all of the partially cured layers are fully cured. Printhead processing can continue to form a completed piezoelectric ink jet printhead.

Abstract: A method and structure for a piezoelectric ink jet printhead. The method can include forming a piezoelectric composite from a liquid sol-gel solution. A first layer of the liquid sol-gel solution can be deposited onto a substrate using, for example, a spin coat process, wherein the substrate may be a printhead diaphragm. The first layer may be partially cured, then a second layer of the liquid sol-gel solution can be deposited onto the partially cured first layer, which is then partially cured. Any number of layers of liquid sol-gel solution can be deposited to result in a piezoelectric composite having a suitable thickness. Subsequently, all of the partially cured layers are fully cured. Printhead processing can continue to form a completed piezoelectric ink jet printhead.

Abstract: A method for developing large area highly oriented polycrystalline ferroelectric thin films using spin-on sol-gel deposition and laser crystallization techniques that allow for precise control of temperature distribution. The present invention improves quality, reliability, performance and cost effective production of ferroelectric non-volatile random access memory (FNVRAM) on thermally sensitive silicon and gallium arsenide semiconductor substrates compatible with very large scale integrated circuit technologies. The method is time effective, as crystallization is performed in three seconds as compared to thirteen hours in a conventional furnace for 1 cm.times.1 cm wafer. In addition, crystallization of the film is further achieved without exposing the underneath device structure to detrimental high temperature annealing conditions.

Abstract: Ferroelectric capacitors with hybrid electrodes including both a conducting oxide and a noble metal may be used to achieve devices having improved performance over capacitors with either platinum or ruthenium oxide electrodes. These hybrid electrode structures can improve capacitor performance both in terms of fatigue and leakage current. Accordingly, these ferroelectric capacitors with hybrid electrodes can be used as elements of an integrated circuit such as a non-volatile memory or dynamic random access memory.

Abstract: The invention provides a sintered ceria/zirconia ceramic and a method of making it. The product comprises a substantially homogeneous mixture of 76-92 mole % zirconia, 8-20 mole % ceria and 0.1-1.2 mole % lanthana and/or praseodymia. The method involves heating an artifact comprising said mixture to a temperature in the range 1200.degree.-1700.degree. C.

Abstract: A method of making beta"-alumina comprises dispersing in a precursor of aluminum oxide a member of the group comprising sodium oxide and its precursors, and dispersing in the precursor of aluminum oxide a spinel stabilizer which is a member of the group comprising spinel-forming oxides and the precursors thereof, to form a mixture. The mixture is then heated to a temperature at which at least some of the precursor of aluminum oxide is converted to beta"-alumina. The precursor of aluminum oxide is one which, when calcined in air by itself, has a calcination product which, when subjected to X-ray diffraction, displays a predetermined X-ray diffraction trace. The X-ray diffraction trace is one whose peak with the highest intensity in the 2 (theta) range of 44.degree.-48.degree. and whose peak with the highest intensity in the 2 (theta) range of 63.degree.-69.degree. respectively have maximum intensities and integrated intensities which comply with equations (I) and (II):A/S is greater than 0.