Abstract: A method and system for writing a label (defined within a predetermined region of the sample 110), the label displaying a visible layout of light-modified regions in a predetermined spatial arrangement. The method comprises: modifying regions of a material within the label using light, wherein the modifying comprises using light of a first polarisation state to provide photo-induced optically active regions of a first type having a first optical activity state which is characteristic of having been formed by light of the first polarisation state, in order to encode covert information in the label using the locations of the first type of light-modified regions within the spatial arrangement of the label.

Abstract: A method and system for writing a label (defined within a predetermined region of the sample 110), the label displaying a visible layout of light-modified regions in a predetermined spatial arrangement. The method comprises: modifying regions of a material within the label using light, wherein the modifying comprises using light of a first polarisation state to provide photo-induced optically active regions of a first type having a first optical activity state which is characteristic of having been formed by light of the first polarisation state, in order to encode covert information in the label using the locations of the first type of light-modified regions within the spatial arrangement of the label.

Abstract: A method and system for writing a label (defined within a predetermined region of the sample 110), the label displaying a visible layout of light-modified regions in a predetermined spatial arrangement. The method comprises: modifying regions of a material within the label using light, wherein the modifying comprises using light of a first polarisation state to provide photo-induced optically active regions of a first type having a first optical activity state which is characteristic of having been formed by light of the first polarisation state, in order to encode covert information in the label using the locations of the first type of light-modified regions within the spatial arrangement of the label.

Abstract: A semiconductor detector device comprises a layer of semiconductor material for generating charge in response to an input event and an array of pixels for collecting charge. Tracks are connected to the pixels to supply signals representing the collected charge to a reader circuit. The pixels are grouped into sets, all the pixels within a set being connected to the same track, the sets of pixels being interwoven so that so that any group of n adjacent pixels capable of collecting charge generated by a single input event is connected to a combination of n tracks that is unique to the group of pixels, where n has a value of one of 2, 3 or 4. This allows detection of position of the area of charge collection on the basis of temporally coincident signals on a combination of at least n tracks.

Abstract: An active pixel image sensor comprises a pixel array of active pixels that are capable of being random access addressed to provide pixel readout signals from the addressed pixels on N output lines, where N is a plural integer and M ADC lanes capable of performing analog-to-digital conversion of pixel readout signals, where M is a plural integer less than N. A switching arrangement is capable of selectively connecting output lines to the M ADC lanes. A control unit provides random access addressing of the pixels, and in synchronisation therewith controls the switching arrangement to connect the output lines on which the addressed pixels provide pixel readout signals to ADC lanes.

Abstract: An active pixel image sensor comprises a pixel array of active pixels that are capable of being random access addressed to provide pixel readout signals from the addressed pixels on N output lines, where N is a plural integer and M ADC lanes capable of performing analog-to-digital conversion of pixel readout signals, where M is a plural integer less than N. A switching arrangement is capable of selectively connecting output lines to the M ADC lanes. A control unit provides random access addressing of the pixels, and in synchronisation therewith controls the switching arrangement to connect the output lines on which the addressed pixels provide pixel readout signals to ADC lanes.

Abstract: A semiconductor detector device comprises a layer of semiconductor material for generating charge in response to an input event and an array of pixels for collecting charge. Tracks are connected to the pixels to supply signals representing the collected charge to a reader circuit. The pixels are grouped into sets, all the pixels within a set being connected to the same track, the sets of pixels being interwoven so that so that any group of n adjacent pixels capable of collecting charge generated by a single input event is connected to a combination of n tracks that is unique to the group of pixels, where n has a value of one of 2, 3 or 4. This allows detection of position of the area of charge collection on the basis of temporally coincident signals on a combination of at least n tracks.

Abstract: An electron detector (30) for detection of electrons comprises a semiconductor wafer (11) having a central portion (12) with a thickness of at most 150 ?m, preferably at most 100 ?m, formed by etching an area of a thicker wafer. On opposite sides of the central portion (12) there are n-type and p-type contacts (16, 31). In operation, a reverse bias is applied across the contacts (16, 31) and electrons incident on the layer (15) of intrinsic semiconductor material between the contacts (16, 31) generate electron-hole pairs which accelerate towards the contacts (16, 31) where they may detected as a signal. Conductive terminals (24, 32) contact the contacts (16, 31) and are connected to a signal processing circuit in IC chips (28, 37) mounted to the semiconductor wafer (11) outside the active area of the detector (30). The contacts (16, 31) are shaped as arrays of strips extending orthogonally on the two sides of the intrinsic layer (15) to provide two-dimensional spatial resolution.

Abstract: An electron detector (30) for detection of electrons comprises a semiconductor wafer (11) having a central portion (12) with a thickness of at most 150 ?m, preferably at most 100 ?m, formed by etching an area of a thicker wafer. On opposite sides of the central portion (12) there are n-type and p-type contacts (16, 31). In operation, a reverse bias is applied across the contacts (16, 31) and electrons incident on the layer (15) of intrinsic semiconductor material between the contacts (16, 31) generate electron-hole pairs which accelerate towards the contacts (16, 31) where they may detected as a signal. Conductive terminals (24, 32) contact the contacts (16, 31) and are connected to a signal processing circuit in IC chips (28, 37) mounted to the semiconductor wafer (11) outside the active area of the detector (30). The contacts (16, 31) are shaped as arrays of strips extending orthogonally on the two sides of the intrinsic layer (15) to provide two-dimensional spatial resolution.