Abstract: A method and apparatus to manufacture a coherent bundle of scintillating fibers is disclosed. A method includes providing a collimated bundle having a glass preform with capillaries therethrough known in the industry as a glass capillary array, and infusing the glass capillary array with a scintillating polymer or a polymer matrix containing scintillating nanoparticles.

Abstract: A method and apparatus to manufacture a coherent bundle of scintillating fibers is disclosed. A method includes providing a collimated bundle having a glass preform with capillaries therethrough known in the industry as a glass capillary array, and infusing the glass capillary array with a scintillating polymer or a polymer matrix containing scintillating nanoparticles.

Abstract: A method and apparatus to manufacture a coherent bundle of scintillating fibers is disclosed. A method includes providing a collimated bundle having a glass preform with capillaries therethrough known in the industry as a glass capillary array, and infusing the glass capillary array with a scintillating polymer or a polymer matrix containing scintillating nanoparticles.

Abstract: A method and apparatus to manufacture a coherent bundle of scintillating fibers is disclosed. A method includes providing a collimated bundle having a glass preform with capillaries therethrough known in the industry as a glass capillary array, and infusing the glass capillary array with a scintillating polymer or a polymer matrix containing scintillating nanoparticles.

Abstract: A participant, engages in healthcare provider prescribed physical rehabilitation exercises utilizing specifically designed controllers, and these exercises are mapped to one or more video game commands. These commands are coupled with other inputs to control the video game that will be used to ensure adherence to a prescribed rehabilitation regimen. Information is gathered on the participant, in order to aid in rehabilitation.

Abstract: A semiconductor device comprises a substrate, a ferroelectric capacitor which includes a ferroelectric film on the substrate, and a stress application layer which applies tensile or compressive stress to the ferroelectric film of the ferroelectric capacitor by applying stress to the substrate.

Abstract: A semiconductor device comprises a substrate, a ferroelectric capacitor which includes a ferroelectric film on the substrate, and a stress application layer which applies tensile or compressive stress to the ferroelectric film of the ferroelectric capacitor by applying stress to the substrate.

Abstract: A semiconductor device comprises a substrate, a ferroelectric capacitor which includes a ferroelectric film on the substrate, and a stress application layer which applies tensile or compressive stress to the ferroelectric film of the ferroelectric capacitor by applying stress to the substrate.

Abstract: A semiconductor device comprises a substrate, a ferroelectric capacitor which includes a ferroelectric film on the substrate, and a stress application layer which applies tensile or compressive stress to the ferroelectric film of the ferroelectric capacitor by applying stress to the substrate.

Abstract: A semiconductor device comprises a substrate, a ferroelectric capacitor which includes a ferroelectric film on the substrate, and a stress application layer which applies tensile or compressive stress to the ferroelectric film of the ferroelectric capacitor by applying stress to the substrate.

Abstract: Oxygen partial pressure may be controlled during annealing of a perovskite dielectric layer by providing an oxygen-absorbing layer adjacent the perovskite dielectric layer, and annealing the perovskite dielectric layer in an ambient that includes an ambient oxygen partial pressure, such that the oxygen-absorbing layer locally reduces the oxygen partial pressure adjacent the perovskite dielectric layer to below the ambient oxygen partial pressure. Thus, a perovskite dielectric layer can be annealed without the need to provide ultra-high vacuum and/or ultra-high purity ambient environments.

Abstract: Dielectrics are formed having high dielectric constants, low loss tangents, and other desirable electrical and physical properties. The dielectrics are annealed at temperatures allowing the use of copper foil substrates, and at low oxygen partial pressures.

Abstract: A dielectric film is formed on a free-standing conductive metal layer to form a multi-layer foil comprising a conductive metal layer, a barrier layer and a dielectric oxide layer. Such multi-layer foils are mechanically flexible, and useful for the manufacture of capacitors. Examples of barrier layers include Ni—P or Ni—Cr alloys. After a second layer of conductive metal is deposited on a dielectric oxide surface opposing the first conductive metal layer, the resulting capacitor foil is processed into a capacitor. The resulting capacitor is a surface mounted capacitor or is formed as a integrated or embedded capacitor within a circuit board.

Abstract: A semiconductor device comprises a substrate, a ferroelectric capacitor which includes a ferroelectric film on the substrate, and a stress application layer which applies tensile or compressive stress to the ferroelectric film of the ferroelectric capacitor by applying stress to the substrate.

Abstract: A dielectric film is formed on a free-standing conductive metal layer to form a multi-layer foil comprising a conductive metal layer, a barrier layer and a dielectric oxide layer. Such multi-layer foils are mechanically flexible, and useful for the manufacture of capacitors. Examples of barrier layers include Ni—P or Ni—Cr alloys. After a second layer of conductive metal is deposited on a dielectric oxide surface opposing the first conductive metal layer, the resulting capacitor foil is processed into a capacitor. The resulting capacitor is a surface mounted capacitor or is formed as a integrated or embedded capacitor within a circuit board.