Abstract: A thin film integrated circuit resistor is disclosed that is substantially linear at applied voltages greater than 100 volts. The integrated circuit resistor comprises a substrate, a plurality of resistive blocks electrically connected in series, a shield associated with each resistive block, and passivation means for isolating the substrate from the resistive blocks and the shields, and for isolating the shields from the resistive blocks except where they are electrically connected. Each shield substantially surrounds its associated resistive block with conductive material, and each shield is electrically connected to its resistive block such that each shield is at a potential of some point along the length of its associated resistive block.

Abstract: The present invention is directed to a high voltage field effect transistor (FET) constructed on the major surface of a substrate of a first conductivity type. The FET includes a drain region of a second conductivity type located in the major surface and a generally annular drift region of the second conductivity type, located in the major surface and outside of the drain region. A generally annular gate is located on the major surface and outside of the drift region, and a generally annular source region is located in the major surface and outside of the gate. A first channel stop is located in the major surface and outboard of the source region, and a second channel stop located in the major surface and beneath the gate, having at least two portions in close proximity to each other. A channel region is located in the major surface and between the two second channel stop portions. The second channel stop blocks communication between the source region and the drift region except through the channel region.