Abstract: A pressure measuring device having a pedestal, an intermediate piece of semiconductor arranged on the pedestal and, connected with the pedestal and arranged on the intermediate piece and connected with the intermediate piece, a semiconductor pressure sensor having a support and a measuring membrane, or diaphragm. The pressure measuring device offers reliable protection of the sensitive measuring membrane, or diaphragm, against mechanical distortions. Provided extending in the interior of the i[ntermediate piece is an annular cavity, which surrounds a first cylindrical section and, pedestal end thereof, a second cylindrical section of the intermediate piece. The second cylindrical section has a greater outer diameter than the first cylindrical section. The cavity is open on an end of the intermediate piece toward the pedestal.

Abstract: A hydraulic pressure intermediary includes: a platform, which has a bowl-shaped surface having an annular, platform-surface edge region, a platform-surface central region depressed relative to the platform-surface edge region and surrounded by the platform-surface edge region, and an annular platform-surface transition region, which borders, on its inner side, the platform-surface central region and, on its outer side, the platform-surface edge region; a bowl-shaped, separating membrane having a flat, annular, separating-membrane edge region, a separating-membrane central region depressed relative to the separating-membrane edge region and an annular separating-membrane transition region, which borders, on its inner side, the separating-membrane central region and, on its outer side, the separating-membrane edge region. The separating membrane is connected with the platform-surface edge region within the separating-membrane edge region along a surrounding joint.

Abstract: A piezoresistive pressure sensor is especially suitable for measuring smaller pressures and has a small linearity error. The pressure sensor is manufactured from a BESOI wafer having first and second silicon layers and an oxide layer arranged therebetween. The pressure sensor includes, formed from the first silicon layer of the BESOI wafer, an active layer, in which piezoresistive elements are doped, and, formed from the second silicon layer of the BESOI wafer, a membrane carrier, which externally surrounds a cavity in the second silicon layer, via which a membrane forming region of the active layer and an oxide layer associated therewith are exposed, wherein, in an outer edge of the region of the oxide layer exposed by the cavity, a groove is provided surrounding the region.

Abstract: A hydraulic pressure intermediary includes: a platform, which has a bowl-shaped surface having an annular, platform-surface edge region, a platform-surface central region depressed relative to the platform-surface edge region and surrounded by the platform-surface edge region, and an annular platform-surface transition region, which borders, on its inner side, the platform-surface central region and, on its outer side, the platform-surface edge region; a bowl-shaped, separating membrane having a flat, annular, separating-membrane edge region, a separating-membrane central region depressed relative to the separating-membrane edge region and an annular separating-membrane transition region, which borders, on its inner side, the separating-membrane central region and, on its outer side, the separating-membrane edge region. The separating membrane is connected with the platform-surface edge region within the separating-membrane edge region along a surrounding joint.

Abstract: A pressure sensor comprises a sensor platform; a measuring membrane, or diaphragm, which is held by the sensor platform, and can have a pressure applied to it and is deformable as a function of pressure; and at least two resistance elements having an A1xGa1?xN layer. At least a first resistance element of the at least two resistance elements is arranged on the measuring membrane, or diaphragm and has a defomation-dependent resistance value. The pressure sensor can be operated using a measurement circuit to register a signal which depends on the resistance values of the at least two resistance elements in the plane of the A1xGa1?xN layer. Four resistance elements are preferably provided in a full bridge.